CH397878A - Verfahren zur Herstellung von Halbleiteranordnungen - Google Patents

Verfahren zur Herstellung von Halbleiteranordnungen

Info

Publication number
CH397878A
CH397878A CH28962A CH28962A CH397878A CH 397878 A CH397878 A CH 397878A CH 28962 A CH28962 A CH 28962A CH 28962 A CH28962 A CH 28962A CH 397878 A CH397878 A CH 397878A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor devices
semiconductor
devices
Prior art date
Application number
CH28962A
Other languages
English (en)
Inventor
Friedrich Dr Spitzer
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of CH397878A publication Critical patent/CH397878A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Thyristors (AREA)
CH28962A 1961-01-13 1962-01-11 Verfahren zur Herstellung von Halbleiteranordnungen CH397878A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEB60834A DE1154871B (de) 1961-01-13 1961-01-13 Verfahren zum Herstellen von Halbleiterbauelementen mit wenigstens einem pn-UEbergang

Publications (1)

Publication Number Publication Date
CH397878A true CH397878A (de) 1965-08-31

Family

ID=6972991

Family Applications (1)

Application Number Title Priority Date Filing Date
CH28962A CH397878A (de) 1961-01-13 1962-01-11 Verfahren zur Herstellung von Halbleiteranordnungen

Country Status (3)

Country Link
CH (1) CH397878A (de)
DE (1) DE1154871B (de)
GB (1) GB968230A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268309A (en) * 1964-03-30 1966-08-23 Gen Electric Semiconductor contact means
US3368120A (en) * 1965-03-22 1968-02-06 Gen Electric Multilayer contact system for semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE556337A (de) * 1956-04-03
NL241982A (de) * 1958-08-13 1900-01-01
FR1213751A (fr) * 1958-10-27 1960-04-04 Telecommunications Sa Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes

Also Published As

Publication number Publication date
DE1154871B (de) 1963-09-26
GB968230A (en) 1964-09-02

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