FR1213751A - Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion - Google Patents

Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion

Info

Publication number
FR1213751A
FR1213751A FR1213751DA FR1213751A FR 1213751 A FR1213751 A FR 1213751A FR 1213751D A FR1213751D A FR 1213751DA FR 1213751 A FR1213751 A FR 1213751A
Authority
FR
France
Prior art keywords
transistrons
manufacturing
double diffusion
junctions obtained
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Application granted granted Critical
Publication of FR1213751A publication Critical patent/FR1213751A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
FR1213751D 1958-10-27 1958-10-27 Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion Expired FR1213751A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1213751T 1958-10-27

Publications (1)

Publication Number Publication Date
FR1213751A true FR1213751A (fr) 1960-04-04

Family

ID=9676653

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1213751D Expired FR1213751A (fr) 1958-10-27 1958-10-27 Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion

Country Status (1)

Country Link
FR (1) FR1213751A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1133039B (de) * 1960-05-10 1962-07-12 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen und mehrere Zonen abwechselnden Leitfaehigkeitstyp enthaltenden Halbleiterkoerper
DE1154871B (de) * 1961-01-13 1963-09-26 Bbc Brown Boveri & Cie Verfahren zum Herstellen von Halbleiterbauelementen mit wenigstens einem pn-UEbergang
FR2003233A1 (fr) * 1968-03-05 1969-11-07 Lucas Industries Ltd Dispositif semi-conducteur et son procede de fabrication
DE1539625B1 (de) * 1965-01-30 1971-11-11 Allmaenna Svenska Elek Ska Ab Schaltungsanordnung zum betrieb eines steuerbaren halbleiter bauelementes und steuerbares halbleiterbauelement fuer diese schaltungsanordnung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1133039B (de) * 1960-05-10 1962-07-12 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen und mehrere Zonen abwechselnden Leitfaehigkeitstyp enthaltenden Halbleiterkoerper
DE1154871B (de) * 1961-01-13 1963-09-26 Bbc Brown Boveri & Cie Verfahren zum Herstellen von Halbleiterbauelementen mit wenigstens einem pn-UEbergang
DE1539625B1 (de) * 1965-01-30 1971-11-11 Allmaenna Svenska Elek Ska Ab Schaltungsanordnung zum betrieb eines steuerbaren halbleiter bauelementes und steuerbares halbleiterbauelement fuer diese schaltungsanordnung
FR2003233A1 (fr) * 1968-03-05 1969-11-07 Lucas Industries Ltd Dispositif semi-conducteur et son procede de fabrication

Similar Documents

Publication Publication Date Title
CH415056A (fr) Procédé de fabrication de copolymères
FR1244924A (fr) Procédé de fabrication de cristaux semi-conducteurs
FR1221347A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1250270A (fr) Procédé de fabrication de dispositifs semi-conducteurs à jonctions uniformes
FR1233186A (fr) Procédé de fabrication de semi-conducteurs
FR1223031A (fr) Procédé de fabrication de substances tensio-actives
FR1333711A (fr) Procédé de fabrication des 6-méthyl-3-oxo-delta4,6-stéroïdes
FR1221379A (fr) Procédé de fabrication du nitrure de bore
FR1180762A (fr) Transistor à diffusion et son procédé de fabrication
FR1214641A (fr) Procédé de fabrication de monocristaux semi-conducteurs
BE614482Q (fr) Procédé de fabrication de filières
FR1221988A (fr) Procédé de fabrication de phosphure de bore
FR1213751A (fr) Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion
FR75631E (fr) Procédé de fabrication de l'alpha-tocophéryl-quinone
BE583990A (fr) Procédé de fabrication de borures
FR1227497A (fr) Procédé de fabrication de pièces profilées
FR77774E (fr) Procédé de fabrication de cristaux semi-conducteurs
FR1236239A (fr) Procédé de fabrication de borazoles
FR1194556A (fr) Procédé de fabrication du magnésium
FR1211556A (fr) Procédé de fabrication de chlorophénylchlorosilanes
FR1235784A (fr) Procédé de fabrication du tris (vinoxy) propane
FR1207512A (fr) Procédé de fabrication de catalyseur
FR1203486A (fr) Procédé de fabrication de nouveaux dessins de broderie
BE580412A (fr) Transistor à diffusion et son procédé de fabrication
FR1242530A (fr) Procédé de fabrication de polyéthylène