FR77774E - Procédé de fabrication de cristaux semi-conducteurs - Google Patents

Procédé de fabrication de cristaux semi-conducteurs

Info

Publication number
FR77774E
FR77774E FR828125A FR828125A FR77774E FR 77774 E FR77774 E FR 77774E FR 828125 A FR828125 A FR 828125A FR 828125 A FR828125 A FR 828125A FR 77774 E FR77774 E FR 77774E
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor crystal
crystal manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR828125A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US844288A external-priority patent/US3031403A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to FR828125A priority Critical patent/FR77774E/fr
Application granted granted Critical
Publication of FR77774E publication Critical patent/FR77774E/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR828125A 1958-08-28 1960-05-24 Procédé de fabrication de cristaux semi-conducteurs Expired FR77774E (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR828125A FR77774E (fr) 1958-08-28 1960-05-24 Procédé de fabrication de cristaux semi-conducteurs

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US75783258A 1958-08-28 1958-08-28
US844288A US3031403A (en) 1958-08-28 1959-10-05 Process for producing crystals and the products thereof
FR828125A FR77774E (fr) 1958-08-28 1960-05-24 Procédé de fabrication de cristaux semi-conducteurs

Publications (1)

Publication Number Publication Date
FR77774E true FR77774E (fr) 1962-04-20

Family

ID=27245516

Family Applications (1)

Application Number Title Priority Date Filing Date
FR828125A Expired FR77774E (fr) 1958-08-28 1960-05-24 Procédé de fabrication de cristaux semi-conducteurs

Country Status (1)

Country Link
FR (1) FR77774E (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219451B (de) * 1962-08-31 1966-06-23 Siemens Ag Verfahren zur Herstellung von flachen dendritischen, aus Halbleitermaterial bestehenden, langgestreckten Einkristallen
US5878775A (en) * 1997-11-03 1999-03-09 Tamburro, Jr.; Louis Toilet valve assembly

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219451B (de) * 1962-08-31 1966-06-23 Siemens Ag Verfahren zur Herstellung von flachen dendritischen, aus Halbleitermaterial bestehenden, langgestreckten Einkristallen
US5878775A (en) * 1997-11-03 1999-03-09 Tamburro, Jr.; Louis Toilet valve assembly

Similar Documents

Publication Publication Date Title
FR1244924A (fr) Procédé de fabrication de cristaux semi-conducteurs
CH415056A (fr) Procédé de fabrication de copolymères
FR1221347A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1233186A (fr) Procédé de fabrication de semi-conducteurs
FR1230911A (fr) Procédé de fabrication de silicium de grande pureté
FR1223031A (fr) Procédé de fabrication de substances tensio-actives
FR1252474A (fr) Procédé de fabrication de bêta-cyanoéthylphényldichlorosilane
FR1214641A (fr) Procédé de fabrication de monocristaux semi-conducteurs
BE614482Q (fr) Procédé de fabrication de filières
FR75631E (fr) Procédé de fabrication de l'alpha-tocophéryl-quinone
FR77774E (fr) Procédé de fabrication de cristaux semi-conducteurs
BE583990A (fr) Procédé de fabrication de borures
FR1184331A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1236239A (fr) Procédé de fabrication de borazoles
FR1211556A (fr) Procédé de fabrication de chlorophénylchlorosilanes
FR1195807A (fr) Procédé de fabrication du corindon
FR77995E (fr) Procédé de fabrication de cristaux semi-conducteurs
FR1273880A (fr) Procédé de fabrication de phényl-alcyne-diols
FR1252421A (fr) Procédé de fabrication de jonctions p-n
FR1242530A (fr) Procédé de fabrication de polyéthylène
FR1207512A (fr) Procédé de fabrication de catalyseur
FR1268742A (fr) Procédé de fabrication de semiconducteurs
FR1268436A (fr) Procédé de fabrication de métanilylcarbamides
FR1268425A (fr) Procédé de fabrication de sulfonylcarbamides
FR1227087A (fr) Procédé de fabrication de di-méthylcyclopentadiène