FR1244924A - Procédé de fabrication de cristaux semi-conducteurs - Google Patents
Procédé de fabrication de cristaux semi-conducteursInfo
- Publication number
- FR1244924A FR1244924A FR803725A FR803725A FR1244924A FR 1244924 A FR1244924 A FR 1244924A FR 803725 A FR803725 A FR 803725A FR 803725 A FR803725 A FR 803725A FR 1244924 A FR1244924 A FR 1244924A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- semiconductor crystal
- crystal manufacturing
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/074—Horizontal melt solidification
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75783258A | 1958-08-28 | 1958-08-28 | |
US844288A US3031403A (en) | 1958-08-28 | 1959-10-05 | Process for producing crystals and the products thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1244924A true FR1244924A (fr) | 1960-11-04 |
Family
ID=27116458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR803725A Expired FR1244924A (fr) | 1958-08-28 | 1959-08-27 | Procédé de fabrication de cristaux semi-conducteurs |
Country Status (6)
Country | Link |
---|---|
US (1) | US3031403A (fr) |
CH (2) | CH440226A (fr) |
DE (2) | DE1291320B (fr) |
FR (1) | FR1244924A (fr) |
GB (2) | GB889058A (fr) |
NL (2) | NL241834A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1246683B (de) * | 1961-03-27 | 1967-08-10 | Westinghouse Electric Corp | Verfahren zur Herstellung eines langgestreckten, dendritischen Halbleiterkoerpers |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3124452A (en) * | 1964-03-10 | figure | ||
GB948002A (en) * | 1959-07-23 | 1964-01-29 | Nat Res Dev | Improvements in or relating to the preparation of semiconductor materials |
US3130040A (en) * | 1960-03-21 | 1964-04-21 | Westinghouse Electric Corp | Dendritic seed crystals having a critical spacing between three interior twin planes |
NL262949A (fr) * | 1960-04-02 | 1900-01-01 | ||
US3154384A (en) * | 1960-04-13 | 1964-10-27 | Texas Instruments Inc | Apparatus for growing compound semiconductor crystal |
US3206406A (en) * | 1960-05-09 | 1965-09-14 | Merck & Co Inc | Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals |
DE1254607B (de) * | 1960-12-08 | 1967-11-23 | Siemens Ag | Verfahren zum Herstellen von einkristallinen Halbleiterkoerpoern aus der Gasphase |
BE624959A (fr) * | 1961-11-20 | |||
NL285435A (fr) * | 1961-11-24 | 1900-01-01 | ||
US3152022A (en) * | 1962-05-25 | 1964-10-06 | Bell Telephone Labor Inc | Epitaxial deposition on the surface of a freshly grown dendrite |
DE1193475B (de) * | 1962-08-23 | 1965-05-26 | Westinghouse Electric Corp | Vorrichtung zum Drehen, Heben und Senken des Tiegels beim Ziehen von dendritischen Einkristallen |
US3212858A (en) * | 1963-01-28 | 1965-10-19 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
DE1257754B (de) * | 1963-01-29 | 1968-01-04 | Fuji Tsushinki Seizo Kabushiki | Verfahren und Vorrichtung zum Herstellen von Dendriten aus Halbleitermaterial |
GB1015541A (en) * | 1963-03-18 | 1966-01-05 | Fujitsu Ltd | Improvements in or relating to methods of producing a semi-conductor dendrite |
US3278342A (en) * | 1963-10-14 | 1966-10-11 | Westinghouse Electric Corp | Method of growing crystalline members completely within the solution melt |
US3261671A (en) * | 1963-11-29 | 1966-07-19 | Philips Corp | Device for treating semi-conductor materials by melting |
US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
US3427211A (en) * | 1965-07-28 | 1969-02-11 | Ibm | Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions |
US3293002A (en) * | 1965-10-19 | 1966-12-20 | Siemens Ag | Process for producing tape-shaped semiconductor bodies |
US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
US3933981A (en) * | 1973-11-30 | 1976-01-20 | Texas Instruments Incorporated | Tin-lead purification of silicon |
US4125425A (en) * | 1974-03-01 | 1978-11-14 | U.S. Philips Corporation | Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element |
US4121965A (en) * | 1976-07-16 | 1978-10-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method of controlling defect orientation in silicon crystal ribbon growth |
CA1169336A (fr) * | 1980-01-07 | 1984-06-19 | Emanuel M. Sachs | Methode et dispositif de filature en ruban sur fils-guides |
US6217286B1 (en) * | 1998-06-26 | 2001-04-17 | General Electric Company | Unidirectionally solidified cast article and method of making |
US7407550B2 (en) * | 2002-10-18 | 2008-08-05 | Evergreen Solar, Inc. | Method and apparatus for crystal growth |
US6814802B2 (en) * | 2002-10-30 | 2004-11-09 | Evergreen Solar, Inc. | Method and apparatus for growing multiple crystalline ribbons from a single crucible |
US11088189B2 (en) | 2017-11-14 | 2021-08-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | High light absorption structure for semiconductor image sensor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB769426A (en) * | 1953-08-05 | 1957-03-06 | Ass Elect Ind | Improvements relating to the manufacture of crystalline material |
-
0
- NL NL113205D patent/NL113205C/xx active
- NL NL241834D patent/NL241834A/xx unknown
-
1959
- 1959-07-17 CH CH7589659A patent/CH440226A/de unknown
- 1959-08-12 GB GB27537/59A patent/GB889058A/en not_active Expired
- 1959-08-25 DE DEW26266A patent/DE1291320B/de active Pending
- 1959-08-27 FR FR803725A patent/FR1244924A/fr not_active Expired
- 1959-10-05 US US844288A patent/US3031403A/en not_active Expired - Lifetime
-
1960
- 1960-04-20 GB GB13783/60A patent/GB913674A/en not_active Expired
- 1960-05-12 DE DEW27847A patent/DE1302031B/de active Pending
- 1960-10-04 CH CH1114860A patent/CH475014A/de unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1246683B (de) * | 1961-03-27 | 1967-08-10 | Westinghouse Electric Corp | Verfahren zur Herstellung eines langgestreckten, dendritischen Halbleiterkoerpers |
Also Published As
Publication number | Publication date |
---|---|
CH475014A (de) | 1969-07-15 |
US3031403A (en) | 1962-04-24 |
NL241834A (fr) | 1900-01-01 |
NL113205C (fr) | 1900-01-01 |
GB913674A (en) | 1962-12-28 |
CH440226A (de) | 1967-07-31 |
DE1302031B (de) | 1969-10-16 |
GB889058A (en) | 1962-02-07 |
DE1291320B (de) | 1969-03-27 |
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