FR1233186A - Procédé de fabrication de semi-conducteurs - Google Patents

Procédé de fabrication de semi-conducteurs

Info

Publication number
FR1233186A
FR1233186A FR797831A FR797831A FR1233186A FR 1233186 A FR1233186 A FR 1233186A FR 797831 A FR797831 A FR 797831A FR 797831 A FR797831 A FR 797831A FR 1233186 A FR1233186 A FR 1233186A
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR797831A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1233186A publication Critical patent/FR1233186A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
FR797831A 1958-06-27 1959-06-18 Procédé de fabrication de semi-conducteurs Expired FR1233186A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US745156A US2974072A (en) 1958-06-27 1958-06-27 Semiconductor connection fabrication
US755299A US2938819A (en) 1958-06-27 1958-08-15 Intermetallic semiconductor device manufacturing
US757552A US3010855A (en) 1958-06-27 1958-08-27 Semiconductor device manufacturing

Publications (1)

Publication Number Publication Date
FR1233186A true FR1233186A (fr) 1960-10-12

Family

ID=27114409

Family Applications (1)

Application Number Title Priority Date Filing Date
FR797831A Expired FR1233186A (fr) 1958-06-27 1959-06-18 Procédé de fabrication de semi-conducteurs

Country Status (5)

Country Link
US (3) US2974072A (fr)
DE (1) DE1101624B (fr)
FR (1) FR1233186A (fr)
GB (1) GB916948A (fr)
NL (1) NL240025A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639546B1 (de) * 1960-10-22 1969-12-11 Philips Nv Verfahren zur Herstellung eines Halbleiterbauelements mit pn-UEbergaengen und einem Halbleiterkoerper aus Silizium

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL247746A (fr) * 1959-01-27
NL259311A (fr) * 1959-12-21
NL265436A (fr) * 1960-01-20
DE1232265B (de) * 1960-03-11 1967-01-12 Philips Patentverwaltung Verfahren zur Herstellung eines Legierungsdiffusionstransistors
CH411138A (de) * 1960-10-20 1966-04-15 Philips Nv Verfahren zur Herstellung einer Halbleiteranordnung und die Halbleiteranordnung als solche
US3151004A (en) * 1961-03-30 1964-09-29 Rca Corp Semiconductor devices
US3220895A (en) * 1961-08-25 1965-11-30 Raytheon Co Fabrication of barrier material devices
US3194699A (en) * 1961-11-13 1965-07-13 Transitron Electronic Corp Method of making semiconductive devices
US3165429A (en) * 1962-01-31 1965-01-12 Westinghouse Electric Corp Method of making a diffused base transistor
DE1170081B (de) * 1962-03-24 1964-05-14 Telefunken Patent Verfahren zum Herstellen von Halbleiterbauelementen
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
NL290930A (fr) * 1963-03-29
DE1232269B (de) * 1963-08-23 1967-01-12 Telefunken Patent Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone
US3337378A (en) * 1963-09-06 1967-08-22 Hitachi Ltd Method for the production of semiconductor devices

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (fr) * 1951-11-16
BE524899A (fr) * 1952-12-16
FR1103544A (fr) * 1953-05-25 1955-11-03 Rca Corp Dispositifs semi-conducteurs, et procédé de fabrication de ceux-ci
BE531626A (fr) * 1953-09-04
BE536985A (fr) * 1954-04-01
DE1025994B (de) * 1954-08-09 1958-03-13 Deutsche Bundespost Halbleiteranordnung zur Gleichrichtung, Steuerung oder Verstaerkung elektrischer oder photoelektrischer Stroeme
BE544843A (fr) * 1955-02-25
NL204025A (fr) * 1955-03-23
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
US2817609A (en) * 1955-06-24 1957-12-24 Hughes Aircraft Co Alkali metal alloy agents for autofluxing in junction forming
US2829993A (en) * 1955-06-24 1958-04-08 Hughes Aircraft Co Process for making fused junction semiconductor devices with alkali metalgallium alloy
DE1035780B (de) * 1955-08-29 1958-08-07 Ibm Deutschland Transistor mit eigenleitender Zone
NL209275A (fr) * 1955-09-02
US2835613A (en) * 1955-09-13 1958-05-20 Philips Corp Method of surface-treating semi-conductors
US2898247A (en) * 1955-10-24 1959-08-04 Ibm Fabrication of diffused junction semi-conductor devices
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639546B1 (de) * 1960-10-22 1969-12-11 Philips Nv Verfahren zur Herstellung eines Halbleiterbauelements mit pn-UEbergaengen und einem Halbleiterkoerper aus Silizium

Also Published As

Publication number Publication date
GB916948A (en) 1963-01-30
US2974072A (en) 1961-03-07
NL240025A (fr) 1964-01-27
US3010855A (en) 1961-11-28
DE1101624B (de) 1961-03-09
US2938819A (en) 1960-05-31

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