FR77995E - Procédé de fabrication de cristaux semi-conducteurs - Google Patents

Procédé de fabrication de cristaux semi-conducteurs

Info

Publication number
FR77995E
FR77995E FR831682A FR831682A FR77995E FR 77995 E FR77995 E FR 77995E FR 831682 A FR831682 A FR 831682A FR 831682 A FR831682 A FR 831682A FR 77995 E FR77995 E FR 77995E
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor crystal
crystal manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR831682A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to FR831682A priority Critical patent/FR77995E/fr
Application granted granted Critical
Publication of FR77995E publication Critical patent/FR77995E/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR831682A 1959-07-01 1960-06-30 Procédé de fabrication de cristaux semi-conducteurs Expired FR77995E (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR831682A FR77995E (fr) 1959-07-01 1960-06-30 Procédé de fabrication de cristaux semi-conducteurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82435559A 1959-07-01 1959-07-01
FR831682A FR77995E (fr) 1959-07-01 1960-06-30 Procédé de fabrication de cristaux semi-conducteurs

Publications (1)

Publication Number Publication Date
FR77995E true FR77995E (fr) 1962-05-18

Family

ID=26186624

Family Applications (1)

Application Number Title Priority Date Filing Date
FR831682A Expired FR77995E (fr) 1959-07-01 1960-06-30 Procédé de fabrication de cristaux semi-conducteurs

Country Status (1)

Country Link
FR (1) FR77995E (fr)

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