GB913674A - Improvements in or relating to the production of crystals - Google Patents
Improvements in or relating to the production of crystalsInfo
- Publication number
- GB913674A GB913674A GB13783/60A GB1378360A GB913674A GB 913674 A GB913674 A GB 913674A GB 13783/60 A GB13783/60 A GB 13783/60A GB 1378360 A GB1378360 A GB 1378360A GB 913674 A GB913674 A GB 913674A
- Authority
- GB
- United Kingdom
- Prior art keywords
- relating
- crystals
- planes
- production
- twin planes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/074—Horizontal melt solidification
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
<PICT:0913674/III/1> In pulling dendritic crystals in accordance with Claim 1 of the parent Specification, the seed has at least two interior (111) twin planes which extend to that end only of the seed which contacts the melt. An odd number of twin planes is preferably employed. Using three twin planes (Fig. 5), the distance between successive planes may be 5 and 1 2/3 microns respectively. Two examples, relating to germanium and indium antimonide respectively, are given.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75783258A | 1958-08-28 | 1958-08-28 | |
US844288A US3031403A (en) | 1958-08-28 | 1959-10-05 | Process for producing crystals and the products thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
GB913674A true GB913674A (en) | 1962-12-28 |
Family
ID=27116458
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB27537/59A Expired GB889058A (en) | 1958-08-28 | 1959-08-12 | Improvements in or relating to the production of crystals |
GB13783/60A Expired GB913674A (en) | 1958-08-28 | 1960-04-20 | Improvements in or relating to the production of crystals |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB27537/59A Expired GB889058A (en) | 1958-08-28 | 1959-08-12 | Improvements in or relating to the production of crystals |
Country Status (6)
Country | Link |
---|---|
US (1) | US3031403A (en) |
CH (2) | CH440226A (en) |
DE (2) | DE1291320B (en) |
FR (1) | FR1244924A (en) |
GB (2) | GB889058A (en) |
NL (2) | NL241834A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4121965A (en) * | 1976-07-16 | 1978-10-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method of controlling defect orientation in silicon crystal ribbon growth |
US4125425A (en) * | 1974-03-01 | 1978-11-14 | U.S. Philips Corporation | Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3124452A (en) * | 1964-03-10 | figure | ||
GB948002A (en) * | 1959-07-23 | 1964-01-29 | Nat Res Dev | Improvements in or relating to the preparation of semiconductor materials |
US3130040A (en) * | 1960-03-21 | 1964-04-21 | Westinghouse Electric Corp | Dendritic seed crystals having a critical spacing between three interior twin planes |
NL262949A (en) * | 1960-04-02 | 1900-01-01 | ||
US3154384A (en) * | 1960-04-13 | 1964-10-27 | Texas Instruments Inc | Apparatus for growing compound semiconductor crystal |
US3206406A (en) * | 1960-05-09 | 1965-09-14 | Merck & Co Inc | Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals |
DE1254607B (en) * | 1960-12-08 | 1967-11-23 | Siemens Ag | Process for the production of monocrystalline semiconductor bodies from the gas phase |
BE631688A (en) * | 1961-03-27 | 1900-01-01 | ||
BE624959A (en) * | 1961-11-20 | |||
NL285435A (en) * | 1961-11-24 | 1900-01-01 | ||
US3152022A (en) * | 1962-05-25 | 1964-10-06 | Bell Telephone Labor Inc | Epitaxial deposition on the surface of a freshly grown dendrite |
DE1193475B (en) * | 1962-08-23 | 1965-05-26 | Westinghouse Electric Corp | Device for rotating, lifting and lowering the crucible when pulling dendritic single crystals |
US3212858A (en) * | 1963-01-28 | 1965-10-19 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
DE1257754B (en) * | 1963-01-29 | 1968-01-04 | Fuji Tsushinki Seizo Kabushiki | Method and device for producing dendrites from semiconductor material |
GB1015541A (en) * | 1963-03-18 | 1966-01-05 | Fujitsu Ltd | Improvements in or relating to methods of producing a semi-conductor dendrite |
US3278342A (en) * | 1963-10-14 | 1966-10-11 | Westinghouse Electric Corp | Method of growing crystalline members completely within the solution melt |
US3261671A (en) * | 1963-11-29 | 1966-07-19 | Philips Corp | Device for treating semi-conductor materials by melting |
US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
US3427211A (en) * | 1965-07-28 | 1969-02-11 | Ibm | Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions |
US3293002A (en) * | 1965-10-19 | 1966-12-20 | Siemens Ag | Process for producing tape-shaped semiconductor bodies |
US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
US3933981A (en) * | 1973-11-30 | 1976-01-20 | Texas Instruments Incorporated | Tin-lead purification of silicon |
CA1169336A (en) * | 1980-01-07 | 1984-06-19 | Emanuel M. Sachs | String stabilized ribbon growth method and apparatus |
US6217286B1 (en) * | 1998-06-26 | 2001-04-17 | General Electric Company | Unidirectionally solidified cast article and method of making |
JP4527538B2 (en) * | 2002-10-18 | 2010-08-18 | エバーグリーン ソーラー, インコーポレイテッド | Method and apparatus for crystal growth |
US6814802B2 (en) * | 2002-10-30 | 2004-11-09 | Evergreen Solar, Inc. | Method and apparatus for growing multiple crystalline ribbons from a single crucible |
US11088189B2 (en) * | 2017-11-14 | 2021-08-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | High light absorption structure for semiconductor image sensor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB769426A (en) * | 1953-08-05 | 1957-03-06 | Ass Elect Ind | Improvements relating to the manufacture of crystalline material |
-
0
- NL NL113205D patent/NL113205C/xx active
- NL NL241834D patent/NL241834A/xx unknown
-
1959
- 1959-07-17 CH CH7589659A patent/CH440226A/en unknown
- 1959-08-12 GB GB27537/59A patent/GB889058A/en not_active Expired
- 1959-08-25 DE DEW26266A patent/DE1291320B/en active Pending
- 1959-08-27 FR FR803725A patent/FR1244924A/en not_active Expired
- 1959-10-05 US US844288A patent/US3031403A/en not_active Expired - Lifetime
-
1960
- 1960-04-20 GB GB13783/60A patent/GB913674A/en not_active Expired
- 1960-05-12 DE DEW27847A patent/DE1302031B/en active Pending
- 1960-10-04 CH CH1114860A patent/CH475014A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4125425A (en) * | 1974-03-01 | 1978-11-14 | U.S. Philips Corporation | Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element |
US4121965A (en) * | 1976-07-16 | 1978-10-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method of controlling defect orientation in silicon crystal ribbon growth |
Also Published As
Publication number | Publication date |
---|---|
NL241834A (en) | 1900-01-01 |
FR1244924A (en) | 1960-11-04 |
CH475014A (en) | 1969-07-15 |
GB889058A (en) | 1962-02-07 |
NL113205C (en) | 1900-01-01 |
CH440226A (en) | 1967-07-31 |
DE1291320B (en) | 1969-03-27 |
DE1302031B (en) | 1969-10-16 |
US3031403A (en) | 1962-04-24 |
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