CH440226A - Process for pulling crystals from the melt - Google Patents

Process for pulling crystals from the melt

Info

Publication number
CH440226A
CH440226A CH7589659A CH7589659A CH440226A CH 440226 A CH440226 A CH 440226A CH 7589659 A CH7589659 A CH 7589659A CH 7589659 A CH7589659 A CH 7589659A CH 440226 A CH440226 A CH 440226A
Authority
CH
Switzerland
Prior art keywords
melt
pulling crystals
crystals
pulling
Prior art date
Application number
CH7589659A
Other languages
German (de)
Inventor
I Jr Bennett Allan
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH440226A publication Critical patent/CH440226A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/074—Horizontal melt solidification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH7589659A 1958-08-28 1959-07-17 Process for pulling crystals from the melt CH440226A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75783258A 1958-08-28 1958-08-28
US844288A US3031403A (en) 1958-08-28 1959-10-05 Process for producing crystals and the products thereof

Publications (1)

Publication Number Publication Date
CH440226A true CH440226A (en) 1967-07-31

Family

ID=27116458

Family Applications (2)

Application Number Title Priority Date Filing Date
CH7589659A CH440226A (en) 1958-08-28 1959-07-17 Process for pulling crystals from the melt
CH1114860A CH475014A (en) 1958-08-28 1960-10-04 Process for pulling crystals from the melt

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH1114860A CH475014A (en) 1958-08-28 1960-10-04 Process for pulling crystals from the melt

Country Status (6)

Country Link
US (1) US3031403A (en)
CH (2) CH440226A (en)
DE (2) DE1291320B (en)
FR (1) FR1244924A (en)
GB (2) GB889058A (en)
NL (2) NL113205C (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3124452A (en) * 1964-03-10 figure
GB948002A (en) * 1959-07-23 1964-01-29 Nat Res Dev Improvements in or relating to the preparation of semiconductor materials
US3130040A (en) * 1960-03-21 1964-04-21 Westinghouse Electric Corp Dendritic seed crystals having a critical spacing between three interior twin planes
NL262949A (en) * 1960-04-02 1900-01-01
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3206406A (en) * 1960-05-09 1965-09-14 Merck & Co Inc Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals
DE1254607B (en) * 1960-12-08 1967-11-23 Siemens Ag Process for the production of monocrystalline semiconductor bodies from the gas phase
NL292060A (en) * 1961-03-27 1900-01-01
BE624959A (en) * 1961-11-20
NL285435A (en) * 1961-11-24 1900-01-01
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite
DE1193475B (en) * 1962-08-23 1965-05-26 Westinghouse Electric Corp Device for rotating, lifting and lowering the crucible when pulling dendritic single crystals
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
DE1257754B (en) * 1963-01-29 1968-01-04 Fuji Tsushinki Seizo Kabushiki Method and device for producing dendrites from semiconductor material
GB1015541A (en) * 1963-03-18 1966-01-05 Fujitsu Ltd Improvements in or relating to methods of producing a semi-conductor dendrite
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3427211A (en) * 1965-07-28 1969-02-11 Ibm Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3933981A (en) * 1973-11-30 1976-01-20 Texas Instruments Incorporated Tin-lead purification of silicon
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
US6217286B1 (en) * 1998-06-26 2001-04-17 General Electric Company Unidirectionally solidified cast article and method of making
ES2290517T3 (en) * 2002-10-18 2008-02-16 Evergreen Solar Inc. METHOD AND APPARATUS FOR GLASS GROWTH.
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
US11088189B2 (en) 2017-11-14 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. High light absorption structure for semiconductor image sensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB769426A (en) * 1953-08-05 1957-03-06 Ass Elect Ind Improvements relating to the manufacture of crystalline material

Also Published As

Publication number Publication date
DE1291320B (en) 1969-03-27
NL241834A (en) 1900-01-01
US3031403A (en) 1962-04-24
DE1302031B (en) 1969-10-16
NL113205C (en) 1900-01-01
CH475014A (en) 1969-07-15
GB913674A (en) 1962-12-28
GB889058A (en) 1962-02-07
FR1244924A (en) 1960-11-04

Similar Documents

Publication Publication Date Title
CH475014A (en) Process for pulling crystals from the melt
CH366992A (en) Process for the machine evaluation of characters
CH451191A (en) Process for the continuous diazotization of amines
CH392077A (en) Process for the continuous pulling of dendritic crystals
CH432844A (en) Process for stabilizing polyoxymethylene dieters
AT241013B (en) Device for the continuous winding of strand material
CH370996A (en) Method of cleaning solid material
CH380085A (en) Process for pulling semiconductor rods from the melt and crucible device for carrying out the process
CH365545A (en) Process for producing crystals from highly pure semiconductor material from a melt in a crucible
AT249116B (en) Process for pulling single crystal semiconductor material
CH398652A (en) Device for spraying melts
CH375527A (en) Device for crucible-free zone melting
CH386702A (en) Process for pulling crystalline semiconductor rods from the melt
CH390554A (en) Process for pulling thin, rod-shaped semiconductor crystals from a semiconductor melt
CH387303A (en) Process for continuous zone melting
CH360848A (en) Device for coupling hollow bars
CH416897A (en) Method for bonding metals
CH406160A (en) Process for pulling semiconductor crystals from melts
CH392900A (en) Device for pan-less zone pulling
AT241534B (en) Device for pulling up crystals from a melt
CH380792A (en) Method for connecting helical waveguides
CH359008A (en) Process for soldering metals
CH394448A (en) Method for bonding metals
CH374522A (en) Device for cleaning solid material
AT193943B (en) Device for pulling crystals from the melt of compounds with highly volatile components