FR1189146A - Perfectionnements à la fabrication des éléments de circuits électriques utilisant des corps semi-conducteurs - Google Patents

Perfectionnements à la fabrication des éléments de circuits électriques utilisant des corps semi-conducteurs

Info

Publication number
FR1189146A
FR1189146A FR1189146DA FR1189146A FR 1189146 A FR1189146 A FR 1189146A FR 1189146D A FR1189146D A FR 1189146DA FR 1189146 A FR1189146 A FR 1189146A
Authority
FR
France
Prior art keywords
manufacture
electrical circuit
circuit elements
semiconductor bodies
bodies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
Ronald Denis Sutherland
William Alan Catchpole
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB2711156A external-priority patent/GB801442A/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Priority claimed from GB26120/58A external-priority patent/GB891934A/en
Priority claimed from GB4017558A external-priority patent/GB907942A/en
Application granted granted Critical
Publication of FR1189146A publication Critical patent/FR1189146A/fr
Priority claimed from GB1262761A external-priority patent/GB909377A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Die Bonding (AREA)
FR1189146D 1956-09-05 1957-09-03 Perfectionnements à la fabrication des éléments de circuits électriques utilisant des corps semi-conducteurs Expired FR1189146A (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB2711156A GB801442A (en) 1956-09-05 1956-09-05 Improvements in or relating to semi-conductor devices
GB26120/58A GB891934A (en) 1958-08-14 1958-08-14 Improvements in or relating to semi-conductor devices
GB4017558A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors
GB1262761A GB909377A (en) 1961-04-07 1961-04-07 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
FR1189146A true FR1189146A (fr) 1959-09-29

Family

ID=27448152

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1189146D Expired FR1189146A (fr) 1956-09-05 1957-09-03 Perfectionnements à la fabrication des éléments de circuits électriques utilisant des corps semi-conducteurs

Country Status (6)

Country Link
US (2) US2939205A (fr)
BE (1) BE560551A (fr)
CH (2) CH357470A (fr)
DE (1) DE1158179B (fr)
FR (1) FR1189146A (fr)
NL (1) NL276978A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1157316B (de) * 1959-10-13 1963-11-14 Transistor A G Verfahren und Legierungsform zum Anlegieren von Elektroden an den Halbleiterkoerper eines Halbleiterbauelementes

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3176376A (en) * 1958-04-24 1965-04-06 Motorola Inc Method of making semiconductor device
US3095622A (en) * 1958-06-11 1963-07-02 Clevite Corp Apparatus for manufacture of alloyed semiconductor devices
US3073006A (en) * 1958-09-16 1963-01-15 Westinghouse Electric Corp Method and apparatus for the fabrication of alloyed transistors
NL249576A (fr) * 1959-03-18
US3186046A (en) * 1959-06-10 1965-06-01 Clevite Corp Apparatus for the preparation of alloy contacts
US3150013A (en) * 1960-02-17 1964-09-22 Gen Motors Corp Means and method for fabricating semiconductor devices
DE1132660B (de) * 1960-07-06 1962-07-05 Intermetall Legierungsvorrichtung zum Herstellen von Halbleiteranordnungen durch gleich-zeitiges Anlegieren von Elektroden an einander gegenueberliegenden Flaechen eines Halbleiterplaettchens
DE1464669B1 (de) * 1961-03-06 1971-02-04 Itt Ind Gmbh Deutsche Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet
NL278601A (fr) * 1961-05-25
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
US3253098A (en) * 1963-10-24 1966-05-24 Allis Chalmers Mfg Co Mechanical actuator with permanent magnet
US3409482A (en) * 1964-12-30 1968-11-05 Sprague Electric Co Method of making a transistor with a very thin diffused base and an epitaxially grown emitter
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3619736A (en) * 1970-06-22 1971-11-09 Mitsumi Electric Co Ltd Alloy junction transistor and a method of making the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (fr) * 1949-11-30
GB688866A (en) * 1950-10-19 1953-03-18 Gen Electric Co Ltd Improvements in or relating to crystal rectifiers
GB697869A (en) * 1951-05-11 1953-09-30 Post Office Improvements in or relating to methods of mounting piezo-electric elements
US2758261A (en) * 1952-06-02 1956-08-07 Rca Corp Protection of semiconductor devices
US2756483A (en) * 1953-05-11 1956-07-31 Sylvania Electric Prod Junction forming crucible
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
DE1036393B (de) * 1954-08-05 1958-08-14 Siemens Ag Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
NL107361C (fr) * 1955-04-22 1900-01-01
US2796563A (en) * 1955-06-10 1957-06-18 Bell Telephone Labor Inc Semiconductive devices
US2777101A (en) * 1955-08-01 1957-01-08 Cohen Jerrold Junction transistor
NL121810C (fr) * 1955-11-04
BE555318A (fr) * 1956-03-07
GB800296A (en) * 1956-11-19 1958-08-20 Texas Instruments Inc Manufacture of junction-containing silicon crystals
US2953488A (en) * 1958-12-26 1960-09-20 Shockley William P-n junction having minimum transition layer capacitance
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1157316B (de) * 1959-10-13 1963-11-14 Transistor A G Verfahren und Legierungsform zum Anlegieren von Elektroden an den Halbleiterkoerper eines Halbleiterbauelementes

Also Published As

Publication number Publication date
US2939205A (en) 1960-06-07
DE1158179B (de) 1963-11-28
CH357470A (de) 1961-10-15
US3040219A (en) 1962-06-19
BE560551A (fr)
CH377449A (de) 1964-05-15
NL276978A (fr)

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