FR1217793A - Perfectionnements à la fabrication des éléments semi-conducteurs - Google Patents

Perfectionnements à la fabrication des éléments semi-conducteurs

Info

Publication number
FR1217793A
FR1217793A FR781134A FR781134A FR1217793A FR 1217793 A FR1217793 A FR 1217793A FR 781134 A FR781134 A FR 781134A FR 781134 A FR781134 A FR 781134A FR 1217793 A FR1217793 A FR 1217793A
Authority
FR
France
Prior art keywords
manufacture
semiconductor elements
semiconductor
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR781134A
Other languages
English (en)
Inventor
Henri Valdman
Rene Gicquel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR781134A priority Critical patent/FR1217793A/fr
Priority to US857844A priority patent/US3140527A/en
Priority to GB41729/59A priority patent/GB878544A/en
Application granted granted Critical
Publication of FR1217793A publication Critical patent/FR1217793A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01019—Potassium [K]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01023—Vanadium [V]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01032—Germanium [Ge]
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/904—Wire bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
FR781134A 1958-12-09 1958-12-09 Perfectionnements à la fabrication des éléments semi-conducteurs Expired FR1217793A (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR781134A FR1217793A (fr) 1958-12-09 1958-12-09 Perfectionnements à la fabrication des éléments semi-conducteurs
US857844A US3140527A (en) 1958-12-09 1959-12-07 Manufacture of semiconductor elements
GB41729/59A GB878544A (en) 1958-12-09 1959-12-08 Improvements in or relating to processes of manufacturing semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR781134A FR1217793A (fr) 1958-12-09 1958-12-09 Perfectionnements à la fabrication des éléments semi-conducteurs

Publications (1)

Publication Number Publication Date
FR1217793A true FR1217793A (fr) 1960-05-05

Family

ID=8709055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR781134A Expired FR1217793A (fr) 1958-12-09 1958-12-09 Perfectionnements à la fabrication des éléments semi-conducteurs

Country Status (3)

Country Link
US (1) US3140527A (fr)
FR (1) FR1217793A (fr)
GB (1) GB878544A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1210085B (de) * 1960-08-30 1966-02-03 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen
US3434017A (en) * 1960-04-02 1969-03-18 Telefunken Ag Semiconductor device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275539A (en) * 1962-11-09 1966-09-27 North American Phillips Compan Method of manufacturing semiconductor devices
US3457633A (en) * 1962-12-31 1969-07-29 Ibm Method of making crystal shapes having optically related surfaces
GB1028393A (en) * 1963-03-13 1966-05-04 Siemens Ag Semi-conductor components
DE1282190B (de) * 1964-03-12 1968-11-07 Kabusihiki Kaisha Hitachi Seis Verfahren zum Herstellen von Transistoren
DE1514304A1 (de) * 1964-04-03 1969-05-14 Philco Ford Corp Halbleiteranordnung und Herstellungsverfahren hierfuer
US3421962A (en) * 1965-04-05 1969-01-14 Int Rectifier Corp Apparatus for dicing semiconductor wafers
US3374405A (en) * 1965-06-22 1968-03-19 Philco Ford Corp Semiconductive device and method of fabricating the same
US3373481A (en) * 1965-06-22 1968-03-19 Sperry Rand Corp Method of electrically interconnecting conductors
US3237272A (en) * 1965-07-06 1966-03-01 Motorola Inc Method of making semiconductor device
US3357871A (en) * 1966-01-12 1967-12-12 Ibm Method for fabricating integrated circuits
GB1139154A (en) * 1967-01-30 1969-01-08 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
DE2332822B2 (de) * 1973-06-28 1978-04-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen von diffundierten, kontaktierten und oberflächenpassivierten Halbleiterbauelementen aus Halbleiterscheiben aus Silizium
USRE33197E (en) * 1985-05-03 1990-04-10 Electrover Limited Vibrator wave soldering
US4684056A (en) * 1985-05-03 1987-08-04 Electrovert Limited Vibratory wave soldering

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA601547A (en) * 1960-07-12 R. A. Beale Julian Semi-conductive device
US2836878A (en) * 1952-04-25 1958-06-03 Int Standard Electric Corp Electric devices employing semiconductors
US2813326A (en) * 1953-08-20 1957-11-19 Liebowitz Benjamin Transistors
US2804581A (en) * 1953-10-05 1957-08-27 Sarkes Tarzian Semiconductor device and method of manufacture thereof
BE537167A (fr) * 1954-04-07
NL212349A (fr) * 1955-04-22 1900-01-01
US2897587A (en) * 1955-05-23 1959-08-04 Philco Corp Method of fabricating semiconductor devices
BE551335A (fr) * 1955-09-29
NL107367C (fr) * 1956-04-03
US3022568A (en) * 1957-03-27 1962-02-27 Rca Corp Semiconductor devices
US3021595A (en) * 1958-07-02 1962-02-20 Texas Instruments Inc Ohmic contacts for silicon conductor devices and method for making
US2982002A (en) * 1959-03-06 1961-05-02 Shockley William Fabrication of semiconductor elements
US2942166A (en) * 1959-03-23 1960-06-21 Philco Corp Semiconductor apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434017A (en) * 1960-04-02 1969-03-18 Telefunken Ag Semiconductor device
DE1210085B (de) * 1960-08-30 1966-02-03 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen

Also Published As

Publication number Publication date
US3140527A (en) 1964-07-14
GB878544A (en) 1961-10-04

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