GB891934A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB891934A
GB891934A GB26120/58A GB2612058A GB891934A GB 891934 A GB891934 A GB 891934A GB 26120/58 A GB26120/58 A GB 26120/58A GB 2612058 A GB2612058 A GB 2612058A GB 891934 A GB891934 A GB 891934A
Authority
GB
United Kingdom
Prior art keywords
wires
electrode
lead
flange
ferrule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26120/58A
Inventor
George King
Gerald David Redston
George Nelson Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE560551D priority Critical patent/BE560551A/xx
Priority to NL276978D priority patent/NL276978A/xx
Priority to GB3152657A priority patent/GB801443A/en
Priority to GB3152757A priority patent/GB801444A/en
Priority to US681045A priority patent/US2939205A/en
Priority to FR1189146D priority patent/FR1189146A/en
Priority to CH357470D priority patent/CH357470A/en
Priority to GB26120/58A priority patent/GB891934A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to DEI7953U priority patent/DE1808381U/en
Priority to FR802548A priority patent/FR76240E/en
Priority to BE581648A priority patent/BE581648A/en
Priority to DEI17331A priority patent/DE1158179B/en
Priority to FR812288A priority patent/FR77060E/en
Priority to US857983A priority patent/US3040219A/en
Priority to CH8166259A priority patent/CH377449A/en
Publication of GB891934A publication Critical patent/GB891934A/en
Priority to FR893613A priority patent/FR81572E/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Amplifiers (AREA)

Abstract

891,934. Transistors. STANDARD TELEPHONES & CABLES Ltd. Aug. 7, 1959 [Aug. 14, 1958], No. 26120/58. Class 37. In a junction transistor, one of three lead wires, which pass through an electrically insulating member and are connected in low resistance contact to the electrodes of the transistor, has a cross-sectional area substantially greater than that of the other two lead wires, and a heat conductive container enclosing the device is in thermal contact with said member. As shown, Figs. 8 and 9, a transistor comprises a crystal element 61 of e.g. Ge, having alloyed emitter and collector electrodes 64, 65, of e.g. In, and an ohmic base electrode 63 comprising a metal ring and a free extending portion. The electrodes are connected to lead wires 2, 3, 4 which may be of a Cu-coated Ni-Fe alloy or Cu, plated with e.g. Au, and which are sealed through a body 1 of electrically insulating material such as glass or ceramic, the lead wire 3, which is connected to the collector electrode 65, having a substantially greater cross-sectional area than the wires 2, 4, along its whole length or that part of its length which extends from the collector electrode to, or through, the body 1. For instance, wire 3 may have a diameter of 0.040 inch as against a diameter of 0.018 inch for wires 2, 4. The lead wire 2, which may be of either configuration shown or may comprise a single right-angle bend at the level of the emitter electrode 64, is sufficiently resilient to hold the crystal and electrode assembly in position relative to the lead-wires during manufacture. In the embodiment shown in Fig. 10, the lead wire 4 has the greater crosssectional area and.is connected to a base electrode 66 comprising a conductive plate having a central hole (not shown) through which the collector (or, in a modification, the emitter) electrode protrudes. In alternative embodiments, the wire 2, or the wires 2, 3 may be connected to their respective electrodes by means of an intermediate lead wire. The transistor is protected by a cylindrical cover 131, Fig. 14, a flange 132 of which seats on a flange 43 of a metal ferrule surrounding the glass or ceramic body, a skirt 42 of the ferrule being collapsed radially inwards over the flange 132 and the visible joint being soldered at 141. In an alternative embodiment, the ferrule comprises an annular lip in place of the flange 43, on to which lip the cylindrical cover seats. When the latter is metallic, the mating surfaces of cover and ferrule are tinned before engagement, and the visible joint between them is soldered; when the container is non-metallic, the solder is replaced by a hard-setting synthetic resin. Specifications 801,442 and 801,444 are referred to.
GB26120/58A 1956-09-05 1958-08-14 Improvements in or relating to semi-conductor devices Expired GB891934A (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
BE560551D BE560551A (en) 1956-09-05
NL276978D NL276978A (en) 1956-09-05
GB3152657A GB801443A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
GB3152757A GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
US681045A US2939205A (en) 1956-09-05 1957-08-29 Semi-conductor devices
FR1189146D FR1189146A (en) 1956-09-05 1957-09-03 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
CH357470D CH357470A (en) 1956-09-05 1957-09-05 Method of manufacturing semiconductor devices
GB26120/58A GB891934A (en) 1958-08-14 1958-08-14 Improvements in or relating to semi-conductor devices
DEI7953U DE1808381U (en) 1958-08-14 1959-08-08 ELECTRIC SEMICONDUCTOR DEVICE.
FR802548A FR76240E (en) 1956-09-05 1959-08-11 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
BE581648A BE581648A (en) 1958-08-14 1959-08-13 Improvements in semiconductor devices.
DEI17331A DE1158179B (en) 1956-09-05 1959-12-04 Drift transistor and method for making it
FR812288A FR77060E (en) 1956-09-05 1959-12-07 Improvements in the manufacture of electrical circuit elements using semiconductor bodies
US857983A US3040219A (en) 1956-09-05 1959-12-07 Transistors
CH8166259A CH377449A (en) 1956-09-05 1959-12-10 transistor
FR893613A FR81572E (en) 1956-09-05 1962-04-06 Improvements in the manufacture of electrical circuit elements using semiconductor bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB26120/58A GB891934A (en) 1958-08-14 1958-08-14 Improvements in or relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
GB891934A true GB891934A (en) 1962-03-21

Family

ID=10238696

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26120/58A Expired GB891934A (en) 1956-09-05 1958-08-14 Improvements in or relating to semi-conductor devices

Country Status (3)

Country Link
BE (1) BE581648A (en)
DE (1) DE1808381U (en)
GB (1) GB891934A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834302A (en) * 2020-07-28 2020-10-27 武汉邮埃服光电科技有限公司 Transistor tube seat and transistor airtight packaging structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834302A (en) * 2020-07-28 2020-10-27 武汉邮埃服光电科技有限公司 Transistor tube seat and transistor airtight packaging structure
CN111834302B (en) * 2020-07-28 2022-03-11 武汉邮埃服光电科技有限公司 Transistor tube seat and transistor airtight packaging structure

Also Published As

Publication number Publication date
BE581648A (en) 1960-02-15
DE1808381U (en) 1960-03-24

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