GB801443A - Semi-conductor devices and methods of manufacturing such devices - Google Patents

Semi-conductor devices and methods of manufacturing such devices

Info

Publication number
GB801443A
GB801443A GB3152657A GB3152657A GB801443A GB 801443 A GB801443 A GB 801443A GB 3152657 A GB3152657 A GB 3152657A GB 3152657 A GB3152657 A GB 3152657A GB 801443 A GB801443 A GB 801443A
Authority
GB
United Kingdom
Prior art keywords
beads
jig
minutes
leads
blob
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3152657A
Inventor
Ronald Denis Sutherland
William Alan Catchpole
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority claimed from GB2711156A external-priority patent/GB801442A/en
Priority claimed from GB26120/58A external-priority patent/GB891934A/en
Publication of GB801443A publication Critical patent/GB801443A/en
Priority claimed from GB4017558A external-priority patent/GB907942A/en
Priority claimed from GB1262761A external-priority patent/GB909377A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Fuses (AREA)
  • Die Bonding (AREA)

Abstract

801,443. Transistors. STANDARD TELE. PHONES & CABLES, Ltd. Sept. 5,1956, No. 31526/57. Divided out of 801,442. Class 37. A method of making a fused junction transistor comprises three stages; heating a pellet of activator material characteristic of one conductivity type in a jig on one face of a body of semiconductor of the opposite conductivity type to wet the body, heating a similar pellet located in a jig on a second face of the body to wet the body, and then heating the assembly to a higher temperature which is maintained for a time before slowly cooling to form recrystallized zones of the one conductivity type on the body. In the embodiment a slice 1 of 1 ohm cm. N-type Ge, the surfaces of which lie in III crystallographic planes is placed as shown (Fig. 1) in a jig 10, 12 which is made of graphite at least where it contacts the Ge, and an indium blob 14 placed on the slice through aperture 13. The assembly is heated to 340-380 ‹ C. in 15 minutes in hydrogen, held at that temperature for 10 minutes and then cooled to room temperature. The slice is inverted, a second indium blob placed on it as before opposite the first blob and the assembly heated as before. The temperature is then raised further in 15 minutes to 475- 590‹ C., held for 10 minutes and afterwards lowered at a rate of 20‹ C./minute to 350‹ C. After cooling to room temperature the device is removed from the jig and a base contact 7 (Fig. 7) in the form of an open circle of goldplated molybdenum flash-plated with antimony fused to the body by passing a current through it as described in Specification 801,442, from which the subject-matter of the present Specification has been divided. Leads 4, 5 of platinum or other noble metal are then applied by pressing them on to the indium beads 2, 3 while current sufficient to melt the beads is passed between them, cooling, applying a flux to the junction between the beads and leads, and then passing a further current to fuse the beads to the leads. This method of attaching the leads forms the subject-matter of Specification 801,444 which has been divided from Specification 801,442. In an alternative embodiment lead or lead antimony beads are alloyed to a P-type Ge body to form an NPN transistor.
GB3152657A 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices Expired GB801443A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB3152757A GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
GB2711156A GB801442A (en) 1956-09-05 1956-09-05 Improvements in or relating to semi-conductor devices
GB26120/58A GB891934A (en) 1958-08-14 1958-08-14 Improvements in or relating to semi-conductor devices
GB4017558A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors
GB1262761A GB909377A (en) 1961-04-07 1961-04-07 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB801443A true GB801443A (en) 1958-09-17

Family

ID=27516115

Family Applications (2)

Application Number Title Priority Date Filing Date
GB3152657A Expired GB801443A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices
GB3152757A Expired GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB3152757A Expired GB801444A (en) 1956-09-05 1956-09-05 Semi-conductor devices and methods of manufacturing such devices

Country Status (1)

Country Link
GB (2) GB801443A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9643342B2 (en) 2009-03-09 2017-05-09 1366 Technologies, Inc. Apparati for fabricating thin semiconductor bodies from molten material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9643342B2 (en) 2009-03-09 2017-05-09 1366 Technologies, Inc. Apparati for fabricating thin semiconductor bodies from molten material

Also Published As

Publication number Publication date
GB801444A (en) 1958-09-17

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