GB870599A - Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof - Google Patents
Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereofInfo
- Publication number
- GB870599A GB870599A GB12744/59A GB1274459A GB870599A GB 870599 A GB870599 A GB 870599A GB 12744/59 A GB12744/59 A GB 12744/59A GB 1274459 A GB1274459 A GB 1274459A GB 870599 A GB870599 A GB 870599A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- relating
- manufacture
- methods
- april
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49558—Insulating layers on lead frames, e.g. bridging members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
870,599. Semi-conductor rectifiers. STANDARD TELEPHONES & CABLES Ltd. April 8, 1960 [April 15, 1959], No. 12744/59. Class 37. A crystal rectifier 4 is soldered in low resistance electrical contact between the overlapping flattened ends 3 of a pair of lead-wires 1 and 2. A rectifying PN junction is formed in Si or Ge by diffusion of an impurity, e.g. phosphorus, and a P+ layer, of, e.g. B, may be formed on the other side. The major surfaces of the wafer may be nickel-plated to facilitate soldering of the silver lead-wires of which the flattened ends may have concave depressions to obtain better contact. The assembly, washed and etched, is encapsulated in an insulating material, e.g. a polyisocyanate, and covered with a moistureproof coating, e.g. paint.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE589773D BE589773A (en) | 1959-04-15 | ||
BE570279D BE570279A (en) | 1957-08-12 | ||
CH6203858A CH365804A (en) | 1957-08-12 | 1958-07-22 | Semiconductor device with at least one junction between zones of different conductivity types |
FR1212132D FR1212132A (en) | 1957-08-12 | 1958-08-11 | Improvements in Junction Semiconductor Devices and Method of Making Them |
GB12744/59A GB870599A (en) | 1959-04-15 | 1959-04-15 | Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof |
GB18357/59A GB874349A (en) | 1957-08-12 | 1959-05-29 | Improvements in or relating to semiconductor devices |
FR824364A FR77527E (en) | 1957-08-12 | 1960-04-14 | Improvements in Junction Semiconductor Devices and Method of Making Them |
GB46212/63A GB1031890A (en) | 1959-04-15 | 1963-11-22 | Crystal rectifiers and mountings therefor |
NL6413575A NL6413575A (en) | 1959-04-15 | 1964-11-20 | |
BE656096D BE656096A (en) | 1959-04-15 | 1964-11-23 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB12744/59A GB870599A (en) | 1959-04-15 | 1959-04-15 | Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof |
GB46212/63A GB1031890A (en) | 1959-04-15 | 1963-11-22 | Crystal rectifiers and mountings therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
GB870599A true GB870599A (en) | 1961-06-14 |
Family
ID=62527907
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB12744/59A Expired GB870599A (en) | 1957-08-12 | 1959-04-15 | Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof |
GB46212/63A Expired GB1031890A (en) | 1959-04-15 | 1963-11-22 | Crystal rectifiers and mountings therefor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB46212/63A Expired GB1031890A (en) | 1959-04-15 | 1963-11-22 | Crystal rectifiers and mountings therefor |
Country Status (3)
Country | Link |
---|---|
BE (2) | BE656096A (en) |
GB (2) | GB870599A (en) |
NL (1) | NL6413575A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1274737B (en) * | 1962-07-27 | 1968-08-08 | Itt Ind Ges Mit Beschraenkter | Electric semiconductor device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2727178A1 (en) * | 1977-06-16 | 1979-01-04 | Bosch Gmbh Robert | RECTIFIER ARRANGEMENT |
FR2536211B1 (en) * | 1982-11-16 | 1986-02-07 | Thomson Csf | MICROWAVE DIODE STRUCTURE WITH EXTERNAL CONNECTIONS TAKEN BY TWO METAL BEAMS |
US4599636A (en) * | 1984-03-08 | 1986-07-08 | General Semiconductor Industries, Inc. | Two terminal axial lead suppressor and diode bridge device |
-
0
- BE BE589773D patent/BE589773A/xx unknown
-
1959
- 1959-04-15 GB GB12744/59A patent/GB870599A/en not_active Expired
-
1963
- 1963-11-22 GB GB46212/63A patent/GB1031890A/en not_active Expired
-
1964
- 1964-11-20 NL NL6413575A patent/NL6413575A/xx unknown
- 1964-11-23 BE BE656096D patent/BE656096A/xx unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1274737B (en) * | 1962-07-27 | 1968-08-08 | Itt Ind Ges Mit Beschraenkter | Electric semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
NL6413575A (en) | 1966-05-25 |
BE589773A (en) | 1900-01-01 |
GB1031890A (en) | 1966-06-02 |
BE656096A (en) | 1965-05-24 |
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