GB1320111A - Thermistor and method of manufacturing same - Google Patents
Thermistor and method of manufacturing sameInfo
- Publication number
- GB1320111A GB1320111A GB51472A GB51472A GB1320111A GB 1320111 A GB1320111 A GB 1320111A GB 51472 A GB51472 A GB 51472A GB 51472 A GB51472 A GB 51472A GB 1320111 A GB1320111 A GB 1320111A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- main surface
- thermistor
- jan
- contacted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
1320111 Thermistors PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 5 Jan 1972 [8 Jan 1971] 514/72 Heading H1K In a thermistor comprising two externally contacted electrodes 2 on the same main surface of a monocrystalline semiconductor body 1, e.g. of intrinsic Ge, Si or InSb, the current density in the body 1 is concentrated substantially entirely at the centre of the main surface so that negligible current flows at the edges of the main surface and on all other surfaces. This is achieved by suitable shaping of the electrodes 2 and by the provision of two non-contacted field electrodes 6 between the electrodes 2. A conductive layer may also be provided around the edge of the main surface. The lower surface of the body 1, to which heat is applied, may be covered with silicon dioxide or aluminium oxide, the first-mentioned material also being provided in a layer 4 on the electrode-bearing surface.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712100789 DE2100789A1 (en) | 1971-01-08 | 1971-01-08 | Thermistor and process for its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1320111A true GB1320111A (en) | 1973-06-13 |
Family
ID=5795444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB51472A Expired GB1320111A (en) | 1971-01-08 | 1972-01-05 | Thermistor and method of manufacturing same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3745506A (en) |
| DE (1) | DE2100789A1 (en) |
| FR (1) | FR2121659B1 (en) |
| GB (1) | GB1320111A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200970A (en) * | 1977-04-14 | 1980-05-06 | Milton Schonberger | Method of adjusting resistance of a thermistor |
| US6099164A (en) * | 1995-06-07 | 2000-08-08 | Thermometrics, Inc. | Sensors incorporating nickel-manganese oxide single crystals |
| EP0917717A4 (en) * | 1996-06-17 | 2000-11-08 | Thermometrics Inc | Sensors and methods of making wafer sensors |
| US6125529A (en) * | 1996-06-17 | 2000-10-03 | Thermometrics, Inc. | Method of making wafer based sensors and wafer chip sensors |
| US5953811A (en) * | 1998-01-20 | 1999-09-21 | Emc Technology Llc | Trimming temperature variable resistor |
| US7306967B1 (en) * | 2003-05-28 | 2007-12-11 | Adsem, Inc. | Method of forming high temperature thermistors |
| US7812705B1 (en) | 2003-12-17 | 2010-10-12 | Adsem, Inc. | High temperature thermistor probe |
| US7546772B2 (en) * | 2004-12-30 | 2009-06-16 | Honeywell International Inc. | Piezoresistive pressure sensor |
| KR20130121917A (en) * | 2010-12-02 | 2013-11-06 | 네스텍 소시에테아노님 | Low-inertia thermal sensor in a beverage machine |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2075733A (en) * | 1936-03-11 | 1937-03-30 | Coprox Inc | Resistance and impedance elements for electric circuits |
| US3097336A (en) * | 1960-05-02 | 1963-07-09 | Westinghouse Electric Corp | Semiconductor voltage divider devices |
| US3343114A (en) * | 1963-12-30 | 1967-09-19 | Texas Instruments Inc | Temperature transducer |
-
1971
- 1971-01-08 DE DE19712100789 patent/DE2100789A1/en active Pending
- 1971-12-16 US US00208566A patent/US3745506A/en not_active Expired - Lifetime
-
1972
- 1972-01-05 GB GB51472A patent/GB1320111A/en not_active Expired
- 1972-01-07 FR FR7200441A patent/FR2121659B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2100789A1 (en) | 1972-07-20 |
| US3745506A (en) | 1973-07-10 |
| FR2121659B1 (en) | 1977-07-15 |
| FR2121659A1 (en) | 1972-08-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |