GB1247985A - High frequency responsive semiconductive capacitor - Google Patents
High frequency responsive semiconductive capacitorInfo
- Publication number
- GB1247985A GB1247985A GB2434369A GB2434369A GB1247985A GB 1247985 A GB1247985 A GB 1247985A GB 2434369 A GB2434369 A GB 2434369A GB 2434369 A GB2434369 A GB 2434369A GB 1247985 A GB1247985 A GB 1247985A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- conductive fingers
- capacitor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
1,247,985. Semi-conductor devices. R.C.A. CORPORATION. 13 May, 1969 [21 Aug., 1968], No. 24343/69. Heading H1K. A semi-conductor capacitor comprises a layer 12 of semi-conductor material on which is a layer 14 of insulating material having apertures to allow a plurality of interconnected conductive fingers 16 to contact the semi-conductor, and a further plurality of interconnected conductive fingers 18 arranged in interdigitated relationship with the first set being disposed on the surface of the insulating layer, the two sets of conductive fingers serving as electrodes of the capacitor. The semi-conductor material may be silicon or cadmium selenide, and may be formed by epitaxy on an insulating substrate of sapphire or ceramic, or in a further embodiment, Fig. 5, not shown, may be formed on a body of semi-conductor material of the opposite conductivity type. The insulating layer is formed from the oxide of the semi-conductive material and the conductive fingers may be of metal or very low resistivity semi-conductor material.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75432168A | 1968-08-21 | 1968-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1247985A true GB1247985A (en) | 1971-09-29 |
Family
ID=25034287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2434369A Expired GB1247985A (en) | 1968-08-21 | 1969-05-13 | High frequency responsive semiconductive capacitor |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1940300A1 (en) |
| FR (1) | FR2016025A1 (en) |
| GB (1) | GB1247985A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6974744B1 (en) | 2000-09-05 | 2005-12-13 | Marvell International Ltd. | Fringing capacitor structure |
| US6980414B1 (en) | 2004-06-16 | 2005-12-27 | Marvell International, Ltd. | Capacitor structure in a semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0171445A1 (en) * | 1984-08-11 | 1986-02-19 | Deutsche ITT Industries GmbH | Integrated monolithic circuit with an integrated MIS-capacitor |
-
1969
- 1969-05-12 FR FR6915249A patent/FR2016025A1/fr not_active Withdrawn
- 1969-05-13 GB GB2434369A patent/GB1247985A/en not_active Expired
- 1969-08-07 DE DE19691940300 patent/DE1940300A1/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6974744B1 (en) | 2000-09-05 | 2005-12-13 | Marvell International Ltd. | Fringing capacitor structure |
| US9017427B1 (en) | 2001-01-18 | 2015-04-28 | Marvell International Ltd. | Method of creating capacitor structure in a semiconductor device |
| US6980414B1 (en) | 2004-06-16 | 2005-12-27 | Marvell International, Ltd. | Capacitor structure in a semiconductor device |
| US7116544B1 (en) | 2004-06-16 | 2006-10-03 | Marvell International, Ltd. | Capacitor structure in a semiconductor device |
| US7578858B1 (en) | 2004-06-16 | 2009-08-25 | Marvell International Ltd. | Making capacitor structure in a semiconductor device |
| US7988744B1 (en) | 2004-06-16 | 2011-08-02 | Marvell International Ltd. | Method of producing capacitor structure in a semiconductor device |
| US8537524B1 (en) | 2004-06-16 | 2013-09-17 | Marvell International Ltd. | Capacitor structure in a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1940300A1 (en) | 1970-08-06 |
| FR2016025A1 (en) | 1970-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3562608A (en) | Variable integrated coupler | |
| GB1037519A (en) | Electrical circuits | |
| GB1159393A (en) | Method of Making Contact to Semiconductor Components and Solid-state Circuits | |
| US3040218A (en) | Constant current devices | |
| GB1161309A (en) | Isolated Resistor for Integrated Circuit | |
| GB877071A (en) | Semiconductor device | |
| GB1438045A (en) | High frequency voltage-variable capacitor | |
| GB1173756A (en) | Controllable Electrical Resistor | |
| GB1244926A (en) | Improvements in or relating to electrical control circuit arrangements | |
| GB1247985A (en) | High frequency responsive semiconductive capacitor | |
| GB1079204A (en) | Improvements in and relating to thin film electrical devices | |
| US3612964A (en) | Mis-type variable capacitance semiconductor device | |
| GB1336301A (en) | Capacitor structure | |
| GB1304741A (en) | ||
| GB1012049A (en) | Semiconductive devices | |
| US2595052A (en) | Crystal amplifier | |
| GB1135555A (en) | Improvements in or relating to semiconductor devices | |
| US3631313A (en) | Resistor for integrated circuit | |
| GB1396807A (en) | Semiconductor based thermoelements | |
| GB1482163A (en) | Space charge limited transistor | |
| NL257364A (en) | ||
| GB1206850A (en) | Adaptive electronic circuit element and method of manufacture | |
| GB1519831A (en) | Symmetrical circuit arrangement for forming a variable ac resistance | |
| ES392402A1 (en) | Semiconductor device with isolated circuit elements | |
| GB1200327A (en) | Semiconductor device |