GB1200327A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1200327A
GB1200327A GB3847367A GB3847367A GB1200327A GB 1200327 A GB1200327 A GB 1200327A GB 3847367 A GB3847367 A GB 3847367A GB 3847367 A GB3847367 A GB 3847367A GB 1200327 A GB1200327 A GB 1200327A
Authority
GB
United Kingdom
Prior art keywords
insulating layer
region
edge
electrode layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3847367A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1200327A publication Critical patent/GB1200327A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1,200,327. Semi-conductor devices. MATSUSHITA ELECTRONICS CORP. 21 Aug., 1967 [19 Sept., 1966], No. 38473/67. Heading H1K. A semi-conductor device of the type comprising a substrate of one conductivity type having a region of opposite type at one surface thereof, an insulating layer on the surface, and an electrode layer deposited on the insulating layer and connected to the region, is characterized in that the insulating layer extends beyond the edge of the electrode layer for a distance not exceeding 300 times the thickness of the insulating layer. This reduces the capacity between the electrode layer and the substrate by limiting the extent of the inversion layer which forms beneath the insulating layer. Preferably the edge of the electrode layer lies above the edge of the region, and in an example the insulating layer has a thickness of 0À12Á and an overlap of 9Á.
GB3847367A 1966-09-19 1967-08-21 Semiconductor device Expired GB1200327A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6242766 1966-09-19

Publications (1)

Publication Number Publication Date
GB1200327A true GB1200327A (en) 1970-07-29

Family

ID=13199836

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3847367A Expired GB1200327A (en) 1966-09-19 1967-08-21 Semiconductor device

Country Status (4)

Country Link
BE (1) BE703993A (en)
DE (1) DE1614187B1 (en)
GB (1) GB1200327A (en)
NL (1) NL6712516A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021230A1 (en) * 1997-10-22 1999-04-29 Siemens Aktiengesellschaft Field effect semiconductor component

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
FR1400150A (en) * 1963-07-08 1965-05-21 Rca Corp Advanced semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021230A1 (en) * 1997-10-22 1999-04-29 Siemens Aktiengesellschaft Field effect semiconductor component

Also Published As

Publication number Publication date
DE1614187B1 (en) 1971-05-27
BE703993A (en) 1968-02-01
NL6712516A (en) 1968-03-20

Similar Documents

Publication Publication Date Title
GB954947A (en) Surface-potential controlled semiconductor device
GB1113446A (en) A semiconductor device
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
GB1129200A (en) High frequency field effect transistor
GB1099381A (en) Solid state field-effect devices
GB1166568A (en) MOS Type Devices with Protection Against Destructive Breakdown
GB1234119A (en)
GB988903A (en) Semiconductor devices and methods of making same
GB1161309A (en) Isolated Resistor for Integrated Circuit
ES370557A1 (en) Schottky barrier semiconductor device having a substantially non-conductive barrier for preventing undesirable reverse-leakage currents and method for making the same
ES393035A1 (en) Semiconductor devices having local oxide isolation
GB1060208A (en) Avalanche transistor
GB1134019A (en) Improvements in semi-conductor devices
GB1175049A (en) Controllable tunnel diode
GB1260618A (en) Planar junctions with integrated resistor, for high voltages
GB1444823A (en) Semiconductor devices
GB1125650A (en) Insulating layers and devices incorporating such layers
GB1304741A (en)
GB1135555A (en) Improvements in or relating to semiconductor devices
GB1200327A (en) Semiconductor device
GB1360578A (en) Semiconductor integrated circuits
GB1282616A (en) Semiconductor devices
GB1081224A (en) Improvements in and relating to controlled rectifiers
GB1313915A (en) Resistors for integrated circuits
GB1225399A (en)

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees