JPS55120157A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS55120157A JPS55120157A JP2675579A JP2675579A JPS55120157A JP S55120157 A JPS55120157 A JP S55120157A JP 2675579 A JP2675579 A JP 2675579A JP 2675579 A JP2675579 A JP 2675579A JP S55120157 A JPS55120157 A JP S55120157A
- Authority
- JP
- Japan
- Prior art keywords
- films
- film
- coated
- substrate
- bias voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To equalize the bias voltage applying state of a bias applying wire formed at an IC chip and rationalize the fabrication of a semiconductor integrated circuit assembly by forming the bias applying wire over the entire dicing line and circulating the wire around the IC chip. CONSTITUTION:Thick field insulating films 22 are formed at both edges of a p<->-type semicondcutor substrate 19, and polycrystalline silicon films 21 becoming electrode wires are coated on the entire surfaces of the films 22. Then, the films 21 are patterned, an opening is perforated at the center of the substrate 19, n-type impurity is doped in the residual film 21 to impart conductivity thereto, and an n<+>-type region 24 is diffused in the substrate 21 by utilizing the opening. Then, low temperature oxide films 25 are coated on the outer peripheries of the films 22, an aluminum film 23 is coated on the entire surface including the films 25, the film 23 on the region 24 is removed, and a scribed line 20 is formed thereat. Thereafter, a PSG film 26 is coated to protect the film 23 except the line 20, and a basic bias voltage is applied to an aluminum terminal 23a provided at the end of the film 23. Thus, it can simplify the bias applying structure and equalize the bias voltage thus applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2675579A JPS55120157A (en) | 1979-03-09 | 1979-03-09 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2675579A JPS55120157A (en) | 1979-03-09 | 1979-03-09 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55120157A true JPS55120157A (en) | 1980-09-16 |
Family
ID=12202089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2675579A Pending JPS55120157A (en) | 1979-03-09 | 1979-03-09 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55120157A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59159571A (en) * | 1983-03-01 | 1984-09-10 | Nec Corp | Manufacture of insulated gate field effect type semiconductor device |
-
1979
- 1979-03-09 JP JP2675579A patent/JPS55120157A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59159571A (en) * | 1983-03-01 | 1984-09-10 | Nec Corp | Manufacture of insulated gate field effect type semiconductor device |
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