GB874349A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB874349A
GB874349A GB18357/59A GB1835759A GB874349A GB 874349 A GB874349 A GB 874349A GB 18357/59 A GB18357/59 A GB 18357/59A GB 1835759 A GB1835759 A GB 1835759A GB 874349 A GB874349 A GB 874349A
Authority
GB
United Kingdom
Prior art keywords
oxide
wax
wafer
junction
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18357/59A
Inventor
Reginald Thomas Galbraith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE570279D priority Critical patent/BE570279A/xx
Priority to GB25388/57A priority patent/GB815699A/en
Priority claimed from GB25388/57A external-priority patent/GB815699A/en
Priority to CH6203858A priority patent/CH365804A/en
Priority to FR1212132D priority patent/FR1212132A/en
Priority claimed from GB12744/59A external-priority patent/GB870599A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB18357/59A priority patent/GB874349A/en
Priority to FR824364A priority patent/FR77527E/en
Priority to FR828393A priority patent/FR77789E/en
Publication of GB874349A publication Critical patent/GB874349A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

874,349. Semiconductor devices. STANDARD TELEPHONES & CABLES Ltd. May 27, 1960 [May 29, 1959], No. 18357/59. Class 37. A very small PN junction is made in a semiconductor wafer 1 by providing the wafer with both an oxide and a wax coating, positioning the wax to expose a small area of oxide, removing the exposed oxide and forming the PN junction in the exposed area. Fig. 1 (a) shows a silicon wafer which has been polished mechanically and on which is formed an oxide layer by heating the wafer in an atmosphere containing oxygen. The coating thickness is about 5000 Š and is determined by optical interference methods. The slice is coated with paraffin wax 3 (Fig. 1 (c)). A sewing needle of .018 inches diameter then punctures the wax 3 (Fig. 1 (d)) under spring control so that the wafer is not damaged. The oxide coating below the puncture is then removed by a hydrofluoric acid etch (Fig. 1 (e).), the size of the junction being determined not by the needle area but by the etching period. The remainder of the wax film is removed (Fig. 1 (f)) and the junction is formed by depositing a layer of boric acid 4 (Fig. 1 (g)) on the oxide and heating it for 1¢ hours at 1220‹ C. in an atmosphere of wet oxygen. Boron diffuses into the wafer to form the junction (Fig. 1 (h)) and electrical contact is made by evaporation of copper to which a lead wire may be soldered. The rest of the boric oxide and silicon oxide are removed by a hydrofluoric acid wash (Fig. 1 (i)). The oxide coating may be produced by an electrolytic etching process using acetic acid and can be removed by an acid vapour, spraying or floating in acid instead of total immersion. The Specification states that a ring-shaped electrode might be made by penetrating the wax with a thin-walled tube.
GB18357/59A 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices Expired GB874349A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
BE570279D BE570279A (en) 1957-08-12
GB25388/57A GB815699A (en) 1959-05-29 1957-08-12 Improvements in or relating to semi-conductor devices and methods of manufacture thereof
CH6203858A CH365804A (en) 1957-08-12 1958-07-22 Semiconductor device with at least one junction between zones of different conductivity types
FR1212132D FR1212132A (en) 1957-08-12 1958-08-11 Improvements in Junction Semiconductor Devices and Method of Making Them
GB18357/59A GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices
FR824364A FR77527E (en) 1957-08-12 1960-04-14 Improvements in Junction Semiconductor Devices and Method of Making Them
FR828393A FR77789E (en) 1957-08-12 1960-05-27 Improvements in Junction Semiconductor Devices and Method of Making Them

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB25388/57A GB815699A (en) 1959-05-29 1957-08-12 Improvements in or relating to semi-conductor devices and methods of manufacture thereof
GB12744/59A GB870599A (en) 1959-04-15 1959-04-15 Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof
GB18357/59A GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices
FR824364A FR77527E (en) 1957-08-12 1960-04-14 Improvements in Junction Semiconductor Devices and Method of Making Them

Publications (1)

Publication Number Publication Date
GB874349A true GB874349A (en) 1961-08-02

Family

ID=62527908

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18357/59A Expired GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices

Country Status (4)

Country Link
BE (1) BE570279A (en)
CH (1) CH365804A (en)
FR (2) FR1212132A (en)
GB (1) GB874349A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225304B (en) * 1961-11-16 1966-09-22 Telefunken Patent Diffusion process for manufacturing a semiconductor component

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL295980A (en) * 1962-07-31
US3475660A (en) * 1967-12-01 1969-10-28 Int Rectifier Corp Hollow cylindrical semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225304B (en) * 1961-11-16 1966-09-22 Telefunken Patent Diffusion process for manufacturing a semiconductor component

Also Published As

Publication number Publication date
CH365804A (en) 1962-11-30
FR1212132A (en) 1960-03-22
BE570279A (en) 1900-01-01
FR77527E (en) 1962-03-16

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