FR77527E - Improvements in Junction Semiconductor Devices and Method of Making Them - Google Patents

Improvements in Junction Semiconductor Devices and Method of Making Them

Info

Publication number
FR77527E
FR77527E FR824364A FR824364A FR77527E FR 77527 E FR77527 E FR 77527E FR 824364 A FR824364 A FR 824364A FR 824364 A FR824364 A FR 824364A FR 77527 E FR77527 E FR 77527E
Authority
FR
France
Prior art keywords
making
semiconductor devices
junction semiconductor
junction
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR824364A
Other languages
French (fr)
Inventor
Denis Fishman
Dave Francis Dunster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE570279D priority Critical patent/BE570279A/xx
Priority claimed from GB25388/57A external-priority patent/GB815699A/en
Priority to CH6203858A priority patent/CH365804A/en
Priority to FR1212132D priority patent/FR1212132A/en
Priority claimed from GB12744/59A external-priority patent/GB870599A/en
Priority to GB18357/59A priority patent/GB874349A/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Priority to FR824364A priority patent/FR77527E/en
Application granted granted Critical
Publication of FR77527E publication Critical patent/FR77527E/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR824364A 1957-08-12 1960-04-14 Improvements in Junction Semiconductor Devices and Method of Making Them Expired FR77527E (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
BE570279D BE570279A (en) 1957-08-12
CH6203858A CH365804A (en) 1957-08-12 1958-07-22 Semiconductor device with at least one junction between zones of different conductivity types
FR1212132D FR1212132A (en) 1957-08-12 1958-08-11 Improvements in Junction Semiconductor Devices and Method of Making Them
GB18357/59A GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices
FR824364A FR77527E (en) 1957-08-12 1960-04-14 Improvements in Junction Semiconductor Devices and Method of Making Them

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB25388/57A GB815699A (en) 1959-05-29 1957-08-12 Improvements in or relating to semi-conductor devices and methods of manufacture thereof
GB12744/59A GB870599A (en) 1959-04-15 1959-04-15 Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof
GB18357/59A GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices
FR824364A FR77527E (en) 1957-08-12 1960-04-14 Improvements in Junction Semiconductor Devices and Method of Making Them

Publications (1)

Publication Number Publication Date
FR77527E true FR77527E (en) 1962-03-16

Family

ID=62527908

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1212132D Expired FR1212132A (en) 1957-08-12 1958-08-11 Improvements in Junction Semiconductor Devices and Method of Making Them
FR824364A Expired FR77527E (en) 1957-08-12 1960-04-14 Improvements in Junction Semiconductor Devices and Method of Making Them

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1212132D Expired FR1212132A (en) 1957-08-12 1958-08-11 Improvements in Junction Semiconductor Devices and Method of Making Them

Country Status (4)

Country Link
BE (1) BE570279A (en)
CH (1) CH365804A (en)
FR (2) FR1212132A (en)
GB (1) GB874349A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225304B (en) * 1961-11-16 1966-09-22 Telefunken Patent Diffusion process for manufacturing a semiconductor component
NL295980A (en) * 1962-07-31
US3475660A (en) * 1967-12-01 1969-10-28 Int Rectifier Corp Hollow cylindrical semiconductor device

Also Published As

Publication number Publication date
FR1212132A (en) 1960-03-22
CH365804A (en) 1962-11-30
BE570279A (en) 1900-01-01
GB874349A (en) 1961-08-02

Similar Documents

Publication Publication Date Title
FR1154894A (en) welded-junction semiconductor elements and method of manufacture
FR1210987A (en) Semiconductor device enhancements
FR1143107A (en) Junction transistors and manufacturing processes
FR1267417A (en) Semiconductor device and manufacturing method
FR1211000A (en) Method and apparatus for manufacturing transistors
FR1242704A (en) Semiconductor devices and method for their manufacture
FR1184921A (en) Improvements in alloy manufacturing processes of rectifiers or transistrons with junctions
FR1148656A (en) Semiconductor containing silicon and manufacturing method therefor
FR1211393A (en) Semiconductor devices and method of manufacturing same
FR1089900A (en) Semiconductor device with p-n junctions and method of manufacture
FR77527E (en) Improvements in Junction Semiconductor Devices and Method of Making Them
FR1147942A (en) Manufacture of junction transistors
FR77789E (en) Improvements in Junction Semiconductor Devices and Method of Making Them
CH361059A (en) Transistor and method of manufacturing the same
FR1206050A (en) Semiconductor devices and method for making them
FR1235720A (en) Semiconductor device and method of manufacturing same
FR1188498A (en) Semiconductor device enhancements
FR1209312A (en) Improvements to Junction Type Semiconductor Devices
FR1275836A (en) Semiconductor devices and method of manufacture
CH345080A (en) Semiconductor device and method of manufacturing same
FR1187461A (en) Improvements in semiconductor junction devices and their manufacturing processes
FR1171253A (en) Manufacturing process of alloy junction type semiconductor rectifiers and transistors
FR1127520A (en) Lick stone and its manufacture
FR1311510A (en) Semiconductor devices and method of their manufacture
FR1210447A (en) Improvements in the manufacture of semiconductor devices