FR1267417A - Semiconductor device and manufacturing method - Google Patents

Semiconductor device and manufacturing method

Info

Publication number
FR1267417A
FR1267417A FR838054A FR838054A FR1267417A FR 1267417 A FR1267417 A FR 1267417A FR 838054 A FR838054 A FR 838054A FR 838054 A FR838054 A FR 838054A FR 1267417 A FR1267417 A FR 1267417A
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR838054A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Priority to FR838054A priority Critical patent/FR1267417A/en
Application granted granted Critical
Publication of FR1267417A publication Critical patent/FR1267417A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR838054A 1959-09-08 1960-09-08 Semiconductor device and manufacturing method Expired FR1267417A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR838054A FR1267417A (en) 1959-09-08 1960-09-08 Semiconductor device and manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83850459A 1959-09-08 1959-09-08
FR838054A FR1267417A (en) 1959-09-08 1960-09-08 Semiconductor device and manufacturing method

Publications (1)

Publication Number Publication Date
FR1267417A true FR1267417A (en) 1961-07-21

Family

ID=26187409

Family Applications (1)

Application Number Title Priority Date Filing Date
FR838054A Expired FR1267417A (en) 1959-09-08 1960-09-08 Semiconductor device and manufacturing method

Country Status (1)

Country Link
FR (1) FR1267417A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194500B (en) * 1961-04-07 1965-06-10 Intermetall A semiconductor device having a plurality of inserted strip-shaped zones of a conductivity type and a method of manufacturing
DE1202906B (en) * 1962-05-10 1965-10-14 Licentia Gmbh Controllable semiconductor rectifier comprising a disc-shaped four-layer monocrystalline semiconductor body and method for its manufacture
DE1211339B (en) * 1961-10-06 1966-02-24 Westinghouse Electric Corp Controllable semiconductor component with four zones
DE1216435B (en) * 1963-03-14 1966-05-12 Int Standard Electric Corp Switchable semiconductor component with four zones
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
US3346744A (en) * 1964-02-07 1967-10-10 Gen Electric Power control circuits
US3346874A (en) * 1964-02-07 1967-10-10 Gen Electric Power control circuits
US3351826A (en) * 1963-02-05 1967-11-07 Leroy N Hermann Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions
US3360713A (en) * 1964-02-07 1967-12-26 Gen Electric Power control circuits using bi-directional controllable semiconductor switching devices
DE1265875B (en) * 1963-01-05 1968-04-11 Licentia Gmbh Controllable semiconductor rectifier
US3381161A (en) * 1963-08-01 1968-04-30 Jean Pierre Biet Device for line scanning in a television receiver using a single gate symmetrically conducting turn-on turn-off five layer semiconductor device
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
DE1275597B (en) * 1963-05-07 1968-08-22 Ibm Electronic switch with a surface potential controlled transistor
US3409810A (en) * 1964-03-31 1968-11-05 Texas Instruments Inc Gated symmetrical five layer switch with shorted emitters
US3439183A (en) * 1966-03-16 1969-04-15 Intern Electric Fence Co Inc Solid state fence controller
DE1464983B1 (en) * 1963-12-19 1970-01-15 Gen Electric Semiconductor component that can be switched and controlled in two directions
DE1639306B1 (en) * 1963-05-30 1971-10-07 Licentia Gmbh PROCESS FOR ESTABLISHING A COMMON CONTACT TO AT LEAST TWO NEIGHBORING ZONES OPPOSITE LINE TYPE OF A CONTROLLABLE SEMI-CONDUCTOR ELEMENT, AS WELL AS A SEMI-CONDUCTOR CONSTRUCTION MANUFACTURED AFTERWARDS

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194500B (en) * 1961-04-07 1965-06-10 Intermetall A semiconductor device having a plurality of inserted strip-shaped zones of a conductivity type and a method of manufacturing
DE1211339B (en) * 1961-10-06 1966-02-24 Westinghouse Electric Corp Controllable semiconductor component with four zones
DE1202906B (en) * 1962-05-10 1965-10-14 Licentia Gmbh Controllable semiconductor rectifier comprising a disc-shaped four-layer monocrystalline semiconductor body and method for its manufacture
DE1265875B (en) * 1963-01-05 1968-04-11 Licentia Gmbh Controllable semiconductor rectifier
US3351826A (en) * 1963-02-05 1967-11-07 Leroy N Hermann Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions
DE1216435B (en) * 1963-03-14 1966-05-12 Int Standard Electric Corp Switchable semiconductor component with four zones
DE1275597C2 (en) * 1963-05-07 1969-04-03 Ibm Electronic switch with a surface potential controlled transistor
DE1275597B (en) * 1963-05-07 1968-08-22 Ibm Electronic switch with a surface potential controlled transistor
DE1639306B1 (en) * 1963-05-30 1971-10-07 Licentia Gmbh PROCESS FOR ESTABLISHING A COMMON CONTACT TO AT LEAST TWO NEIGHBORING ZONES OPPOSITE LINE TYPE OF A CONTROLLABLE SEMI-CONDUCTOR ELEMENT, AS WELL AS A SEMI-CONDUCTOR CONSTRUCTION MANUFACTURED AFTERWARDS
US3381161A (en) * 1963-08-01 1968-04-30 Jean Pierre Biet Device for line scanning in a television receiver using a single gate symmetrically conducting turn-on turn-off five layer semiconductor device
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
DE1464983B1 (en) * 1963-12-19 1970-01-15 Gen Electric Semiconductor component that can be switched and controlled in two directions
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
US3360713A (en) * 1964-02-07 1967-12-26 Gen Electric Power control circuits using bi-directional controllable semiconductor switching devices
US3346874A (en) * 1964-02-07 1967-10-10 Gen Electric Power control circuits
US3346744A (en) * 1964-02-07 1967-10-10 Gen Electric Power control circuits
US3409810A (en) * 1964-03-31 1968-11-05 Texas Instruments Inc Gated symmetrical five layer switch with shorted emitters
US3439183A (en) * 1966-03-16 1969-04-15 Intern Electric Fence Co Inc Solid state fence controller

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