FR1184921A - Improvements in alloy manufacturing processes of rectifiers or transistrons with junctions - Google Patents

Improvements in alloy manufacturing processes of rectifiers or transistrons with junctions

Info

Publication number
FR1184921A
FR1184921A FR1184921DA FR1184921A FR 1184921 A FR1184921 A FR 1184921A FR 1184921D A FR1184921D A FR 1184921DA FR 1184921 A FR1184921 A FR 1184921A
Authority
FR
France
Prior art keywords
transistrons
rectifiers
junctions
manufacturing processes
alloy manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Inventor
Francois Gans
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1184921A publication Critical patent/FR1184921A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR1184921D 1957-10-21 1957-10-21 Improvements in alloy manufacturing processes of rectifiers or transistrons with junctions Expired FR1184921A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1184921T 1957-10-21

Publications (1)

Publication Number Publication Date
FR1184921A true FR1184921A (en) 1959-07-28

Family

ID=9663681

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1184921D Expired FR1184921A (en) 1957-10-21 1957-10-21 Improvements in alloy manufacturing processes of rectifiers or transistrons with junctions

Country Status (1)

Country Link
FR (1) FR1184921A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3057762A (en) * 1958-03-12 1962-10-09 Francois F Gans Heterojunction transistor manufacturing process
US3072507A (en) * 1959-06-30 1963-01-08 Ibm Semiconductor body formation
US3082283A (en) * 1959-11-25 1963-03-19 Ibm Radiant energy responsive semiconductor device
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3163562A (en) * 1961-08-10 1964-12-29 Bell Telephone Labor Inc Semiconductor device including differing energy band gap materials
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide
US3211589A (en) * 1960-07-14 1965-10-12 Hughes Aircraft Co P-n junction formation in iii-v semiconductor compounds
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3364084A (en) * 1959-06-18 1968-01-16 Monsanto Co Production of epitaxial films
US3391308A (en) * 1960-01-20 1968-07-02 Texas Instruments Inc Tin as a dopant in gallium arsenide crystals

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3057762A (en) * 1958-03-12 1962-10-09 Francois F Gans Heterojunction transistor manufacturing process
US3364084A (en) * 1959-06-18 1968-01-16 Monsanto Co Production of epitaxial films
US3072507A (en) * 1959-06-30 1963-01-08 Ibm Semiconductor body formation
US3082283A (en) * 1959-11-25 1963-03-19 Ibm Radiant energy responsive semiconductor device
US3391308A (en) * 1960-01-20 1968-07-02 Texas Instruments Inc Tin as a dopant in gallium arsenide crystals
US3211589A (en) * 1960-07-14 1965-10-12 Hughes Aircraft Co P-n junction formation in iii-v semiconductor compounds
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3163562A (en) * 1961-08-10 1964-12-29 Bell Telephone Labor Inc Semiconductor device including differing energy band gap materials

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