FR1256826A - Improvements in the manufacture of junction transistors - Google Patents
Improvements in the manufacture of junction transistorsInfo
- Publication number
- FR1256826A FR1256826A FR826849A FR826849A FR1256826A FR 1256826 A FR1256826 A FR 1256826A FR 826849 A FR826849 A FR 826849A FR 826849 A FR826849 A FR 826849A FR 1256826 A FR1256826 A FR 1256826A
- Authority
- FR
- France
- Prior art keywords
- manufacture
- junction transistors
- transistors
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR826849A FR1256826A (en) | 1959-05-13 | 1960-05-11 | Improvements in the manufacture of junction transistors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1644659A GB871161A (en) | 1959-05-13 | 1959-05-13 | Improvements relating to the production of junction transistors |
FR826849A FR1256826A (en) | 1959-05-13 | 1960-05-11 | Improvements in the manufacture of junction transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1256826A true FR1256826A (en) | 1961-03-24 |
Family
ID=26185989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR826849A Expired FR1256826A (en) | 1959-05-13 | 1960-05-11 | Improvements in the manufacture of junction transistors |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1256826A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1253825B (en) * | 1960-06-07 | 1967-11-09 | Philips Nv | Method for producing a semiconductor component with a semiconductor body made of gallium arsenide by etching |
-
1960
- 1960-05-11 FR FR826849A patent/FR1256826A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1253825B (en) * | 1960-06-07 | 1967-11-09 | Philips Nv | Method for producing a semiconductor component with a semiconductor body made of gallium arsenide by etching |
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