GB871161A - Improvements relating to the production of junction transistors - Google Patents

Improvements relating to the production of junction transistors

Info

Publication number
GB871161A
GB871161A GB1644659A GB1644659A GB871161A GB 871161 A GB871161 A GB 871161A GB 1644659 A GB1644659 A GB 1644659A GB 1644659 A GB1644659 A GB 1644659A GB 871161 A GB871161 A GB 871161A
Authority
GB
United Kingdom
Prior art keywords
emitter
low
pellets
resistance layer
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1644659A
Inventor
Arthur Derrick Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB1644659A priority Critical patent/GB871161A/en
Priority to FR826849A priority patent/FR1256826A/en
Priority to DEA34627A priority patent/DE1144403B/en
Publication of GB871161A publication Critical patent/GB871161A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

871,161. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. April 27, 1960 [May 13, 1959], No. 16446/59. Class 37. A transistor is provided with a low resistance surface layer which is etched to form troughs which surround the collector and emitter pellets and which penetrate completely the low-resistance layer. Fig. 2 shows a stage in the manufacture of a transistor of n-type germanium B which is provided with a low-resistance layer L by diffusing an n-type impurity such as arsenic or antimony into the whole surface of the wafer for example by exposing it to antimony or arsenic vapour. Pellets E and C of p-type material, e.g. indium, are fused to opposite sides of the wafer until they penetrate the surface layer forming PN junctions j<1>, j<2>; 10 minutes at 550‹ C. is suggested. The base contacts which may be in the form of a ring surrounding the emitter and soldered to the low-resistance layer is then applied. Finally, the indium pellets are made the positive connection in an electrolytic etching bath, the negative connection being constituted by electrodes in the bath, possibly by the stainless steel lining of the bath. This produces troughs T (Fig. 4) surrounding the indium pellets and penetrating the low-resistance layer. The effect of this is to make the emitter-base resistance independent of the relative sizes of the emitter pellet and the surrounding hole in the base connection S. Fig. 5 shows a construction in which a spiral emitter E surrounded by an etched trough increases the emitter periphery to area ratio. S<1> is the base contact. A zig-zag or simply rectangular emitter is also suggested.
GB1644659A 1959-05-13 1959-05-13 Improvements relating to the production of junction transistors Expired GB871161A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB1644659A GB871161A (en) 1959-05-13 1959-05-13 Improvements relating to the production of junction transistors
FR826849A FR1256826A (en) 1959-05-13 1960-05-11 Improvements in the manufacture of junction transistors
DEA34627A DE1144403B (en) 1959-05-13 1960-05-12 Power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1644659A GB871161A (en) 1959-05-13 1959-05-13 Improvements relating to the production of junction transistors

Publications (1)

Publication Number Publication Date
GB871161A true GB871161A (en) 1961-06-21

Family

ID=10077467

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1644659A Expired GB871161A (en) 1959-05-13 1959-05-13 Improvements relating to the production of junction transistors

Country Status (2)

Country Link
DE (1) DE1144403B (en)
GB (1) GB871161A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1213056B (en) * 1962-08-16 1966-03-24 Siemens Ag Electrolytic etching process for reducing pn transition areas and / or for removing surface disturbances at pn junctions in semiconductor bodies of semiconductor components

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE967259C (en) * 1952-11-18 1957-10-31 Gen Electric Area transistor
NL178164C (en) * 1953-05-07 Squibb & Sons Inc PROCESS FOR PREPARING C.Q. MANUFACTURE OF A PHARMACEUTICAL PREPARATION WITH BLOOD PRESSURE REDUCING ACTION AND PROCEDURE FOR PREPARING A COMPOUND SUITABLE FOR USE IN THE SAID PROCEDURE.
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
BE533946A (en) * 1953-12-09
US2837704A (en) * 1954-12-02 1958-06-03 Junction transistors
NL105577C (en) * 1955-11-04
DE1044289B (en) * 1956-07-16 1958-11-20 Telefunken Gmbh Method for producing a thin semiconductor layer, e.g. B. of germanium, by electrolytic deposition of the surface of a semiconductor body, especially for the manufacture of transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1213056B (en) * 1962-08-16 1966-03-24 Siemens Ag Electrolytic etching process for reducing pn transition areas and / or for removing surface disturbances at pn junctions in semiconductor bodies of semiconductor components

Also Published As

Publication number Publication date
DE1144403B (en) 1963-02-28

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