GB871161A - Improvements relating to the production of junction transistors - Google Patents
Improvements relating to the production of junction transistorsInfo
- Publication number
- GB871161A GB871161A GB1644659A GB1644659A GB871161A GB 871161 A GB871161 A GB 871161A GB 1644659 A GB1644659 A GB 1644659A GB 1644659 A GB1644659 A GB 1644659A GB 871161 A GB871161 A GB 871161A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- low
- pellets
- resistance layer
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000008188 pellet Substances 0.000 abstract 5
- 239000010410 layer Substances 0.000 abstract 4
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 240000006829 Ficus sundaica Species 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000000866 electrolytic etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
871,161. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. April 27, 1960 [May 13, 1959], No. 16446/59. Class 37. A transistor is provided with a low resistance surface layer which is etched to form troughs which surround the collector and emitter pellets and which penetrate completely the low-resistance layer. Fig. 2 shows a stage in the manufacture of a transistor of n-type germanium B which is provided with a low-resistance layer L by diffusing an n-type impurity such as arsenic or antimony into the whole surface of the wafer for example by exposing it to antimony or arsenic vapour. Pellets E and C of p-type material, e.g. indium, are fused to opposite sides of the wafer until they penetrate the surface layer forming PN junctions j<1>, j<2>; 10 minutes at 550‹ C. is suggested. The base contacts which may be in the form of a ring surrounding the emitter and soldered to the low-resistance layer is then applied. Finally, the indium pellets are made the positive connection in an electrolytic etching bath, the negative connection being constituted by electrodes in the bath, possibly by the stainless steel lining of the bath. This produces troughs T (Fig. 4) surrounding the indium pellets and penetrating the low-resistance layer. The effect of this is to make the emitter-base resistance independent of the relative sizes of the emitter pellet and the surrounding hole in the base connection S. Fig. 5 shows a construction in which a spiral emitter E surrounded by an etched trough increases the emitter periphery to area ratio. S<1> is the base contact. A zig-zag or simply rectangular emitter is also suggested.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1644659A GB871161A (en) | 1959-05-13 | 1959-05-13 | Improvements relating to the production of junction transistors |
FR826849A FR1256826A (en) | 1959-05-13 | 1960-05-11 | Improvements in the manufacture of junction transistors |
DEA34627A DE1144403B (en) | 1959-05-13 | 1960-05-12 | Power transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1644659A GB871161A (en) | 1959-05-13 | 1959-05-13 | Improvements relating to the production of junction transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
GB871161A true GB871161A (en) | 1961-06-21 |
Family
ID=10077467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1644659A Expired GB871161A (en) | 1959-05-13 | 1959-05-13 | Improvements relating to the production of junction transistors |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE1144403B (en) |
GB (1) | GB871161A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1213056B (en) * | 1962-08-16 | 1966-03-24 | Siemens Ag | Electrolytic etching process for reducing pn transition areas and / or for removing surface disturbances at pn junctions in semiconductor bodies of semiconductor components |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE967259C (en) * | 1952-11-18 | 1957-10-31 | Gen Electric | Area transistor |
NL178164C (en) * | 1953-05-07 | Squibb & Sons Inc | PROCESS FOR PREPARING C.Q. MANUFACTURE OF A PHARMACEUTICAL PREPARATION WITH BLOOD PRESSURE REDUCING ACTION AND PROCEDURE FOR PREPARING A COMPOUND SUITABLE FOR USE IN THE SAID PROCEDURE. | |
US2816847A (en) * | 1953-11-18 | 1957-12-17 | Bell Telephone Labor Inc | Method of fabricating semiconductor signal translating devices |
BE533946A (en) * | 1953-12-09 | |||
US2837704A (en) * | 1954-12-02 | 1958-06-03 | Junction transistors | |
NL105577C (en) * | 1955-11-04 | |||
DE1044289B (en) * | 1956-07-16 | 1958-11-20 | Telefunken Gmbh | Method for producing a thin semiconductor layer, e.g. B. of germanium, by electrolytic deposition of the surface of a semiconductor body, especially for the manufacture of transistors |
-
1959
- 1959-05-13 GB GB1644659A patent/GB871161A/en not_active Expired
-
1960
- 1960-05-12 DE DEA34627A patent/DE1144403B/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1213056B (en) * | 1962-08-16 | 1966-03-24 | Siemens Ag | Electrolytic etching process for reducing pn transition areas and / or for removing surface disturbances at pn junctions in semiconductor bodies of semiconductor components |
Also Published As
Publication number | Publication date |
---|---|
DE1144403B (en) | 1963-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2748041A (en) | Semiconductor devices and their manufacture | |
GB730123A (en) | Improved method of fabricating semi-conductive devices | |
NL207910A (en) | ||
GB972512A (en) | Methods of making semiconductor devices | |
GB836585A (en) | Improvements in or relating to semi-conductive devices | |
GB842403A (en) | Improvements in semiconductor devices and methods of making such devices | |
GB1073749A (en) | Improvements in or relating to semiconductor electromechanical transducers | |
GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
GB804000A (en) | Semi-conductor devices and methods of making them | |
KR890016686A (en) | Semiconductor devices with regions doped to levels above the solubility limit | |
GB865471A (en) | Improvements in or relating to processes for making transistors | |
GB856430A (en) | Improvements in and relating to semi-conductive devices | |
GB1145121A (en) | Improvements in and relating to transistors | |
GB1175312A (en) | Semiconductor Switching Device | |
US3180766A (en) | Heavily doped base rings | |
GB871161A (en) | Improvements relating to the production of junction transistors | |
JPS54140875A (en) | Semiconductor device | |
US2813817A (en) | Semiconductor devices and their manufacture | |
GB892029A (en) | Semiconductor device | |
GB735986A (en) | Method of making p-n junction devices | |
GB958521A (en) | Improvements in or relating to methods of manufacturing transistors | |
GB965554A (en) | A multi-function semiconductor device | |
GB853575A (en) | Improvements in broad area transistors | |
ES280288A1 (en) | P-nu junction transistor with increased resistance in current path across base surface | |
GB863612A (en) | Improvements in and relating to semi-conductive devices |