GB1156345A - A Multiple Electrical Contact Assembly for Compression Bonded Semiconductor Devices - Google Patents

A Multiple Electrical Contact Assembly for Compression Bonded Semiconductor Devices

Info

Publication number
GB1156345A
GB1156345A GB31991/67A GB3199167A GB1156345A GB 1156345 A GB1156345 A GB 1156345A GB 31991/67 A GB31991/67 A GB 31991/67A GB 3199167 A GB3199167 A GB 3199167A GB 1156345 A GB1156345 A GB 1156345A
Authority
GB
United Kingdom
Prior art keywords
alloys
semi
layer
joined
washer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31991/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1156345A publication Critical patent/GB1156345A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
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    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
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    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
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    • H01L2924/01027—Cobalt [Co]
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01049—Indium [In]
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    • H01L2924/01051—Antimony [Sb]
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    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

1,156,345. Semi-conductor device. WESTINGHOUSE ELECTRIC CORP. 12 July, 1967 [26 July, 1966], No. 31991/67. Heading H1K. A support 82 of Cu, brass, Ag, A1 or alloys thereof has a layer 122 of Au, Ag, Sn, In, Pb or A1 formed thereon by electrodeposition. Alternatively or additionally to the deposited layer a preformed malleable disc may be used. A contact layer 108 of Mo, Ta, W or alloys thereof is joined to a semi-conductor wafer 106 of Si, Ge, SiC, A<SP>III</SP>B<SP>V</SP> or A<SP>II</SP>B<SP>VI</SP> compounds by a solder layer 120 or a malleable disc. The wafer 106 has regions 107 and 109 of one conductivity type and region 105 of the opposite conductivity type. The regions 107 are engaged by annular contacts 115, and 117 and a circular contact 119 whilst the exposed portions of region 105 are engaged by annular contacts 121 and 123. The surfaces of the contacts and the electrode assembly 60 may be plated with Au, Ag, Sn or alloys thereof. The contact assembly 60 to which Cu conductors 52 and 54 are joined by casting, brazing or soldering is made of two interlocking pieces 10 and 30 (Figs. 1 and 3, and 2 and 4, not shown), which are insulated from each other by shellac or silicone varnish 68 but mechanically joined by epoxy resin 70. The pieces 10 and 30 may be made of Mo, W, Ta, Cu, or Fe-Co-Ni-Mn alloy. An insulating washer 62 of ceramic, mica, glass, quartz or fluorocarbon and a steel thrust washer 64 and a steel spring washer 66 are provided. The semi-conductor wafer may be surrounded by a sleeve (124) of molecular sieve and encapsulated in an iron cylinder (94) sealed by an insulating cap (134). A thrust washer (126) and a retaining ring (128) are provided for cooperation with the spring washers (66 and 67) (Fig. 7, not shown).
GB31991/67A 1966-07-26 1967-07-12 A Multiple Electrical Contact Assembly for Compression Bonded Semiconductor Devices Expired GB1156345A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56791966A 1966-07-26 1966-07-26

Publications (1)

Publication Number Publication Date
GB1156345A true GB1156345A (en) 1969-06-25

Family

ID=24269166

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31991/67A Expired GB1156345A (en) 1966-07-26 1967-07-12 A Multiple Electrical Contact Assembly for Compression Bonded Semiconductor Devices

Country Status (3)

Country Link
US (1) US3448352A (en)
JP (1) JPS4841392B1 (en)
GB (1) GB1156345A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
DE102004050588B4 (en) * 2004-10-16 2009-05-20 Semikron Elektronik Gmbh & Co. Kg Arrangement with a power semiconductor component and with a contact device
DE102004058946B4 (en) * 2004-12-08 2009-06-18 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with auxiliary connection

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
CH307776A (en) * 1952-01-08 1955-06-15 Ericsson Telefon Ab L M Contact device on a semiconductor element.
US3000085A (en) * 1958-06-13 1961-09-19 Westinghouse Electric Corp Plating of sintered tungsten contacts

Also Published As

Publication number Publication date
JPS4841392B1 (en) 1973-12-06
US3448352A (en) 1969-06-03

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