CH376187A - Verfahren zur Herstellung eines Halbleiter-Schaltelementes - Google Patents

Verfahren zur Herstellung eines Halbleiter-Schaltelementes

Info

Publication number
CH376187A
CH376187A CH7936059A CH7936059A CH376187A CH 376187 A CH376187 A CH 376187A CH 7936059 A CH7936059 A CH 7936059A CH 7936059 A CH7936059 A CH 7936059A CH 376187 A CH376187 A CH 376187A
Authority
CH
Switzerland
Prior art keywords
manufacturing
switching element
semiconductor switching
semiconductor
switching
Prior art date
Application number
CH7936059A
Other languages
English (en)
Inventor
Einstein Bernhard
Original Assignee
Transistor Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transistor Ag filed Critical Transistor Ag
Priority to CH7936059A priority Critical patent/CH376187A/de
Priority to DET19101A priority patent/DE1157316B/de
Priority to GB3513760A priority patent/GB909323A/en
Publication of CH376187A publication Critical patent/CH376187A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Die Bonding (AREA)
CH7936059A 1959-10-13 1959-10-13 Verfahren zur Herstellung eines Halbleiter-Schaltelementes CH376187A (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CH7936059A CH376187A (de) 1959-10-13 1959-10-13 Verfahren zur Herstellung eines Halbleiter-Schaltelementes
DET19101A DE1157316B (de) 1959-10-13 1960-10-07 Verfahren und Legierungsform zum Anlegieren von Elektroden an den Halbleiterkoerper eines Halbleiterbauelementes
GB3513760A GB909323A (en) 1959-10-13 1960-10-13 Method and mould for producing semiconductor components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH7936059A CH376187A (de) 1959-10-13 1959-10-13 Verfahren zur Herstellung eines Halbleiter-Schaltelementes

Publications (1)

Publication Number Publication Date
CH376187A true CH376187A (de) 1964-03-31

Family

ID=4537148

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7936059A CH376187A (de) 1959-10-13 1959-10-13 Verfahren zur Herstellung eines Halbleiter-Schaltelementes

Country Status (3)

Country Link
CH (1) CH376187A (de)
DE (1) DE1157316B (de)
GB (1) GB909323A (de)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE560551A (de) * 1956-09-05

Also Published As

Publication number Publication date
DE1157316B (de) 1963-11-14
GB909323A (en) 1962-10-31

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