CH399598A - Verfahren zur Herstellung einer Halbleiteranordnung - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung

Info

Publication number
CH399598A
CH399598A CH145761A CH145761A CH399598A CH 399598 A CH399598 A CH 399598A CH 145761 A CH145761 A CH 145761A CH 145761 A CH145761 A CH 145761A CH 399598 A CH399598 A CH 399598A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH145761A
Other languages
English (en)
Inventor
Reimer Dipl Phys Emeis
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH399598A publication Critical patent/CH399598A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CH145761A 1960-03-11 1961-02-08 Verfahren zur Herstellung einer Halbleiteranordnung CH399598A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES67522A DE1116827B (de) 1960-03-11 1960-03-11 Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einer Legierungselektrode

Publications (1)

Publication Number Publication Date
CH399598A true CH399598A (de) 1965-09-30

Family

ID=7499620

Family Applications (1)

Application Number Title Priority Date Filing Date
CH145761A CH399598A (de) 1960-03-11 1961-02-08 Verfahren zur Herstellung einer Halbleiteranordnung

Country Status (3)

Country Link
CH (1) CH399598A (de)
DE (1) DE1116827B (de)
GB (1) GB897077A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH391113A (de) * 1961-11-17 1965-04-30 Bbc Brown Boveri & Cie Lötverbindung für Halbleiterelemente
DE1272457B (de) * 1963-07-18 1968-07-11 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung
DE3937810C1 (en) * 1989-11-14 1991-03-07 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co Kg, 4788 Warstein, De Carrier plate with soft-soldered circuit substrate - has spacing wires of approximately same coefft. of thermal expansion as solder to limit loading of substrate
WO2012107482A2 (en) 2011-02-08 2012-08-16 Abb Research Ltd Power semiconductor module
EP2528092A1 (de) * 2011-05-27 2012-11-28 ABB Research Ltd. Halbleiterbauelement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL98125C (de) * 1954-08-26 1900-01-01

Also Published As

Publication number Publication date
GB897077A (en) 1962-05-23
DE1116827B (de) 1961-11-09

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