CH403991A - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung

Info

Publication number
CH403991A
CH403991A CH536962A CH536962A CH403991A CH 403991 A CH403991 A CH 403991A CH 536962 A CH536962 A CH 536962A CH 536962 A CH536962 A CH 536962A CH 403991 A CH403991 A CH 403991A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH536962A
Other languages
English (en)
Inventor
Gunter Adam Fritz
Douglas Mills Bernard
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Publication of CH403991A publication Critical patent/CH403991A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CH536962A 1961-05-05 1962-05-05 Verfahren zur Herstellung einer Halbleitervorrichtung CH403991A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB16416/61A GB967002A (en) 1961-05-05 1961-05-05 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
CH403991A true CH403991A (de) 1965-12-15

Family

ID=10076934

Family Applications (1)

Application Number Title Priority Date Filing Date
CH536962A CH403991A (de) 1961-05-05 1962-05-05 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US3244555A (de)
CH (1) CH403991A (de)
DE (1) DE1231812B (de)
GB (1) GB967002A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL143070B (nl) * 1964-04-21 1974-08-15 Philips Nv Werkwijze voor het aanbrengen van naast elkaar gelegen, door een tussenruimte van elkaar gescheiden metaaldelen op een ondergrond en voorwerp, in het bijzonder halfgeleiderinrichting, vervaardigd met toepassing van deze werkwijze.
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3357871A (en) * 1966-01-12 1967-12-12 Ibm Method for fabricating integrated circuits
US3432732A (en) * 1966-03-31 1969-03-11 Tokyo Shibaura Electric Co Semiconductive electromechanical transducers
US3764865A (en) * 1970-03-17 1973-10-09 Rca Corp Semiconductor devices having closely spaced contacts
US3761785A (en) * 1971-04-23 1973-09-25 Bell Telephone Labor Inc Methods for making transistor structures
JPS5910073B2 (ja) * 1972-10-27 1984-03-06 株式会社日立製作所 シリコン・ゲ−トｍｏｓ型半導体装置の製造方法
US3855690A (en) * 1972-12-26 1974-12-24 Westinghouse Electric Corp Application of facet-growth to self-aligned schottky barrier gate field effect transistors
US3994758A (en) * 1973-03-19 1976-11-30 Nippon Electric Company, Ltd. Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
US3886580A (en) * 1973-10-09 1975-05-27 Cutler Hammer Inc Tantalum-gallium arsenide schottky barrier semiconductor device
FR2430063A2 (fr) * 1978-06-29 1980-01-25 Thomson Csf Dispositif acoustique a memoire, pour la correlation notamment, de deux signaux haute frequence, procede de realisation du reseau de diodes utilise dans un tel dispositif et correlateur acoustique a memoire comportant un tel dispositif
US4459605A (en) * 1982-04-26 1984-07-10 Acrian, Inc. Vertical MESFET with guardring
US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
US4654295A (en) * 1983-12-05 1987-03-31 Energy Conversion Devices, Inc. Method of making short channel thin film field effect transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2861909A (en) * 1955-04-25 1958-11-25 Rca Corp Semiconductor devices
NL121810C (de) * 1955-11-04
US2882195A (en) * 1957-05-10 1959-04-14 Bell Telephone Labor Inc Semiconducting materials and devices made therefrom
NL190814A (de) * 1957-08-07 1900-01-01
US3024148A (en) * 1957-08-30 1962-03-06 Minneapols Honeywell Regulator Methods of chemically polishing germanium
GB848477A (en) * 1958-03-26 1960-09-21 Automatic Telephone & Elect Improvements in or relating to electro-magnetic relays
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units
US3079254A (en) * 1959-01-26 1963-02-26 George W Crowley Photographic fabrication of semiconductor devices
NL253834A (de) * 1959-07-21 1900-01-01

Also Published As

Publication number Publication date
GB967002A (en) 1964-08-19
US3244555A (en) 1966-04-05
DE1231812B (de) 1967-01-05

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