CH429672A - Verfahren zur Herstellung einer Halbleiteranordnung - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung

Info

Publication number
CH429672A
CH429672A CH1439361A CH1439361A CH429672A CH 429672 A CH429672 A CH 429672A CH 1439361 A CH1439361 A CH 1439361A CH 1439361 A CH1439361 A CH 1439361A CH 429672 A CH429672 A CH 429672A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH1439361A
Other languages
English (en)
Inventor
Konrad Dr Reuschel
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH429672A publication Critical patent/CH429672A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1439361A 1961-04-14 1961-12-11 Verfahren zur Herstellung einer Halbleiteranordnung CH429672A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0073482 1961-04-14

Publications (1)

Publication Number Publication Date
CH429672A true CH429672A (de) 1967-02-15

Family

ID=7503945

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1439361A CH429672A (de) 1961-04-14 1961-12-11 Verfahren zur Herstellung einer Halbleiteranordnung

Country Status (6)

Country Link
US (1) US3217378A (de)
BE (1) BE613793A (de)
CH (1) CH429672A (de)
GB (1) GB995911A (de)
NL (1) NL273326A (de)
SE (1) SE332459B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1376515A (fr) * 1963-05-14 1964-10-31 Comp Generale Electricite Dispositif de blocage-déblocage à fonctionnement symétrique
US3308351A (en) * 1963-10-14 1967-03-07 Ibm Semimetal pn junction devices
US3284680A (en) * 1963-11-26 1966-11-08 Gen Electric Semiconductor switch
US7772097B2 (en) * 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA638235A (en) * 1962-03-13 Emeis Reimer Method for producing a silicon semiconductor device
BE532590A (de) * 1953-10-16 1900-01-01
NL234451A (de) * 1957-12-27
US3065392A (en) * 1958-02-07 1962-11-20 Rca Corp Semiconductor devices
NL237225A (de) * 1958-03-19
US3076731A (en) * 1958-08-04 1963-02-05 Hughes Aircraft Co Semiconductor devices and method of making the same
NL251614A (de) * 1959-05-28 1900-01-01
NL252533A (de) * 1959-06-30 1900-01-01
US3135585A (en) * 1960-03-01 1964-06-02 Gen Electric Method of growing dislocation-free semiconductor crystals

Also Published As

Publication number Publication date
GB995911A (en) 1965-06-23
NL273326A (de)
BE613793A (de)
SE332459B (de) 1971-02-08
US3217378A (en) 1965-11-16

Similar Documents

Publication Publication Date Title
AT261004B (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT280349B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH513514A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH533907A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH409887A (de) Verfahren zur Herstellung von Halbleitervorrichtungen aus monokristallinen Halbleiterelementen
CH380247A (de) Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium
AT280350B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH381329A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH391111A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH403991A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT256938B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH395349A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT299311B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH423999A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH418466A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH474856A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH399598A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH429672A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT299309B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH368240A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH474158A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT271570B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH362751A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH468081A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH372385A (de) Verfahren zur Herstellung einer Halbleiteranordnung aus Silizium