CH434481A - Verfahren zur Herstellung einer hermetisch abgeschlossenen Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer hermetisch abgeschlossenen Halbleitervorrichtung

Info

Publication number
CH434481A
CH434481A CH423463A CH423463A CH434481A CH 434481 A CH434481 A CH 434481A CH 423463 A CH423463 A CH 423463A CH 423463 A CH423463 A CH 423463A CH 434481 A CH434481 A CH 434481A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
hermetically sealed
sealed semiconductor
hermetically
Prior art date
Application number
CH423463A
Other languages
English (en)
Inventor
Roy Jr Ullery Lee
John Garibotti Domenick
Original Assignee
United Aircraft Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Aircraft Corp filed Critical United Aircraft Corp
Publication of CH434481A publication Critical patent/CH434481A/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
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    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CH423463A 1962-04-10 1963-04-03 Verfahren zur Herstellung einer hermetisch abgeschlossenen Halbleitervorrichtung CH434481A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US186467A US3178804A (en) 1962-04-10 1962-04-10 Fabrication of encapsuled solid circuits

Publications (1)

Publication Number Publication Date
CH434481A true CH434481A (de) 1967-04-30

Family

ID=22685080

Family Applications (1)

Application Number Title Priority Date Filing Date
CH423463A CH434481A (de) 1962-04-10 1963-04-03 Verfahren zur Herstellung einer hermetisch abgeschlossenen Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US3178804A (de)
BE (1) BE630858A (de)
CH (1) CH434481A (de)
GB (1) GB991267A (de)
NL (1) NL291352A (de)

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US3413497A (en) * 1966-07-13 1968-11-26 Hewlett Packard Co Insulated-gate field effect transistor with electrostatic protection means
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3496631A (en) * 1967-02-08 1970-02-24 Gordon Kowa Cheng Chen Manufacture of semi-conductor devices
US3543394A (en) * 1967-05-24 1970-12-01 Sheldon L Matlow Method for depositing thin films in controlled patterns
US3497774A (en) * 1967-06-07 1970-02-24 Beckman Instruments Inc Electrical circuit module and method of manufacture
US3497947A (en) * 1967-08-18 1970-03-03 Frank J Ardezzone Miniature circuit connection and packaging techniques
US3529123A (en) * 1968-07-24 1970-09-15 Smith Corp A O Electron beam heating with controlled beam
US3851382A (en) * 1968-12-02 1974-12-03 Telefunken Patent Method of producing a semiconductor or thick film device
US3860783A (en) * 1970-10-19 1975-01-14 Bell Telephone Labor Inc Ion etching through a pattern mask
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GB991267A (en) 1965-05-05
NL291352A (de) 1900-01-01
BE630858A (de) 1900-01-01
US3178804A (en) 1965-04-20

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