BE630858A - - Google Patents
Info
- Publication number
- BE630858A BE630858A BE630858DA BE630858A BE 630858 A BE630858 A BE 630858A BE 630858D A BE630858D A BE 630858DA BE 630858 A BE630858 A BE 630858A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13001—Core members of the bump connector
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/1203—Rectifying Diode
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- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H01L2924/14—Integrated circuits
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/19043—Component type being a resistor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US186467A US3178804A (en) | 1962-04-10 | 1962-04-10 | Fabrication of encapsuled solid circuits |
Publications (1)
Publication Number | Publication Date |
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BE630858A true BE630858A (xx) | 1900-01-01 |
Family
ID=22685080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE630858D BE630858A (xx) | 1962-04-10 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3178804A (xx) |
BE (1) | BE630858A (xx) |
CH (1) | CH434481A (xx) |
GB (1) | GB991267A (xx) |
NL (1) | NL291352A (xx) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1299766B (de) * | 1964-05-25 | 1969-07-24 | Itt Ind Gmbh Deutsche | Thyristor und Verfahren zu seiner Herstellung |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3256465A (en) * | 1962-06-08 | 1966-06-14 | Signetics Corp | Semiconductor device assembly with true metallurgical bonds |
US3270146A (en) * | 1963-03-14 | 1966-08-30 | Motorola Inc | Hearing aid |
US3300832A (en) * | 1963-06-28 | 1967-01-31 | Rca Corp | Method of making composite insulatorsemiconductor wafer |
US3456158A (en) * | 1963-08-08 | 1969-07-15 | Ibm | Functional components |
US3354354A (en) * | 1964-03-24 | 1967-11-21 | Rca Corp | Oxide bonded semiconductor wafer utilizing intrinsic and degenerate material |
US3699406A (en) * | 1963-12-26 | 1972-10-17 | Gen Electric | Semiconductor gate-controlled pnpn switch |
US3262022A (en) * | 1964-02-13 | 1966-07-19 | Gen Micro Electronics Inc | Packaged electronic device |
US3320485A (en) * | 1964-03-30 | 1967-05-16 | Trw Inc | Dielectric isolation for monolithic circuit |
US3393349A (en) * | 1964-04-30 | 1968-07-16 | Motorola Inc | Intergrated circuits having isolated islands with a plurality of semiconductor devices in each island |
US3289046A (en) * | 1964-05-19 | 1966-11-29 | Gen Electric | Component chip mounted on substrate with heater pads therebetween |
US3386008A (en) * | 1964-08-31 | 1968-05-28 | Cts Corp | Integrated circuit |
US3489953A (en) * | 1964-09-18 | 1970-01-13 | Texas Instruments Inc | Stabilized integrated circuit and process for fabricating same |
US3323198A (en) * | 1965-01-27 | 1967-06-06 | Texas Instruments Inc | Electrical interconnections |
DE1293308B (de) * | 1966-01-21 | 1969-04-24 | Siemens Ag | Transistoranordnung zur Strombegrenzung |
GB1125745A (en) * | 1966-03-16 | 1968-08-28 | English Electric Leo Marconi C | Attaching integrated circuits to substrates |
US3497929A (en) * | 1966-05-31 | 1970-03-03 | Stanford Research Inst | Method of making a needle-type electron source |
DE1564863C2 (de) * | 1966-06-28 | 1983-04-28 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Planartransistor mit einer Emitter-, einer Basis- und einer Kollektorzone |
US3413497A (en) * | 1966-07-13 | 1968-11-26 | Hewlett Packard Co | Insulated-gate field effect transistor with electrostatic protection means |
US3432920A (en) * | 1966-12-01 | 1969-03-18 | Rca Corp | Semiconductor devices and methods of making them |
US3496631A (en) * | 1967-02-08 | 1970-02-24 | Gordon Kowa Cheng Chen | Manufacture of semi-conductor devices |
US3543394A (en) * | 1967-05-24 | 1970-12-01 | Sheldon L Matlow | Method for depositing thin films in controlled patterns |
US3497774A (en) * | 1967-06-07 | 1970-02-24 | Beckman Instruments Inc | Electrical circuit module and method of manufacture |
US3497947A (en) * | 1967-08-18 | 1970-03-03 | Frank J Ardezzone | Miniature circuit connection and packaging techniques |
US3529123A (en) * | 1968-07-24 | 1970-09-15 | Smith Corp A O | Electron beam heating with controlled beam |
US3851382A (en) * | 1968-12-02 | 1974-12-03 | Telefunken Patent | Method of producing a semiconductor or thick film device |
US3860783A (en) * | 1970-10-19 | 1975-01-14 | Bell Telephone Labor Inc | Ion etching through a pattern mask |
US3659035A (en) * | 1971-04-26 | 1972-04-25 | Rca Corp | Semiconductor device package |
US3737742A (en) * | 1971-09-30 | 1973-06-05 | Trw Inc | Monolithic bi-polar semiconductor device employing cermet for both schottky barrier and ohmic contact |
JPS558260Y2 (xx) * | 1973-09-06 | 1980-02-23 | ||
JPS5512430Y2 (xx) * | 1974-08-05 | 1980-03-18 | ||
US4126879A (en) * | 1977-09-14 | 1978-11-21 | Rca Corporation | Semiconductor device with ballast resistor adapted for a transcalent device |
DE2840776A1 (de) * | 1978-09-19 | 1980-03-27 | Siemens Ag | Halbleiterbauelement mit passivierender schutzschicht |
DE3831394A1 (de) * | 1988-09-15 | 1990-03-22 | Prithwis Basu | Verfahren und vorrichtung zum kontaktieren eines elektrischen leitungsdrahtes mit kontaktstellen auf einer leiterplatte |
GB2244374B (en) * | 1990-05-22 | 1994-10-05 | Stc Plc | Improvements in hybrid circuits |
US10583302B2 (en) | 2016-09-23 | 2020-03-10 | Greatbatch Ltd. | Gold wetting on ceramic surfaces upon coating with titanium hydride |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2680220A (en) * | 1950-06-09 | 1954-06-01 | Int Standard Electric Corp | Crystal diode and triode |
DE1446221A1 (de) * | 1951-01-28 | 1969-09-25 | Philips Patentverwaltung | Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen |
DE891113C (de) * | 1951-09-08 | 1953-09-24 | Licentia Gmbh | Verfahren zur Herstellung elektrisch unsymmetrisch leitender Systeme |
DE876419C (de) * | 1951-09-09 | 1953-05-11 | Licentia Gmbh | Verfahren zum Herstellen von elektrischen und/oder mechanischen Verbindungen |
US2898519A (en) * | 1955-11-14 | 1959-08-04 | Erie Resistor Corp | Printed circuit assembly |
US3042998A (en) * | 1957-05-06 | 1962-07-10 | Sperry Gyroscope Co Ltd | Slip ring assembly |
US3029366A (en) * | 1959-04-22 | 1962-04-10 | Sprague Electric Co | Multiple semiconductor assembly |
US2971138A (en) * | 1959-05-18 | 1961-02-07 | Rca Corp | Circuit microelement |
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
US3059322A (en) * | 1961-03-17 | 1962-10-23 | Grady L Teague | Method of making a collapsible antenna of wire mesh |
-
0
- BE BE630858D patent/BE630858A/xx unknown
- NL NL291352D patent/NL291352A/xx unknown
-
1962
- 1962-04-10 US US186467A patent/US3178804A/en not_active Expired - Lifetime
-
1963
- 1963-04-03 CH CH423463A patent/CH434481A/de unknown
- 1963-04-09 GB GB14100/63A patent/GB991267A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1299766B (de) * | 1964-05-25 | 1969-07-24 | Itt Ind Gmbh Deutsche | Thyristor und Verfahren zu seiner Herstellung |
Also Published As
Publication number | Publication date |
---|---|
CH434481A (de) | 1967-04-30 |
NL291352A (xx) | 1900-01-01 |
GB991267A (en) | 1965-05-05 |
US3178804A (en) | 1965-04-20 |