DE1446221A1 - Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen - Google Patents

Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen

Info

Publication number
DE1446221A1
DE1446221A1 DE19511446221 DE1446221A DE1446221A1 DE 1446221 A1 DE1446221 A1 DE 1446221A1 DE 19511446221 DE19511446221 DE 19511446221 DE 1446221 A DE1446221 A DE 1446221A DE 1446221 A1 DE1446221 A1 DE 1446221A1
Authority
DE
Germany
Prior art keywords
semiconductors
metals
wetting
soldered
procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19511446221
Other languages
English (en)
Other versions
DE1446221C3 (de
DE1446221B2 (de
Inventor
Horst Kutschera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Original Assignee
Philips Patentverwaltung GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Patentverwaltung GmbH filed Critical Philips Patentverwaltung GmbH
Priority to DE19511446221 priority Critical patent/DE1446221A1/de
Priority to US87063A priority patent/US3128538A/en
Priority to GB8483/61A priority patent/GB958524A/en
Priority to FR855125A priority patent/FR1288290A/fr
Publication of DE1446221A1 publication Critical patent/DE1446221A1/de
Publication of DE1446221B2 publication Critical patent/DE1446221B2/de
Application granted granted Critical
Publication of DE1446221C3 publication Critical patent/DE1446221C3/de
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/34—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material comprising compounds which yield metals when heated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01019—Potassium [K]
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    • H01L2924/01032—Germanium [Ge]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/013—Alloys
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Exhaust Gas After Treatment (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Description

Philipe Patentverwaltun;"· Cmb'i.
Ak*No. ER/p 329 H46221
9.3.1960
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Nnw tmtUtem a»t 4»ie«& <o«h i«a »a«kt«ll» iaf iaa »«ba«l«MMt· »etall «ahyttlu&jai** iaf»3«· niMr flHfh«««H««««g «af i·» X«i«tallfltt·«· «a ·!«·» lag·λ «a* iiaaht «ai «tait «! t «a» «taaa »«ivaaatea ta·«- tlii«iMa»«Miaa ^««tUt· »aaaaii ¥tttit«t «i«a iaa Itotall iaaa mst Iu M««a&U»«*tl««a» aaa· KMii »t« ataa «agitaaüi , »^oi»l«««i·· JaUka«a«Utfv«l«·
909839/0349 ~f-
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909839/0349
1U6221
eingeeehlossen 1st and dringt in diese «in« Auch ander« Oxyde» wl· V isdutoxyd, liiekeloxyd oder Cadmiumoxyd, können vorteilhaft un.;ewa iät «erden·
üb hat ei eh geaei^tf daü durcli die Heaktionafreudi /jkelt von reduzierten Metall- und Halbleiteroxyden eine «Brück·« KwiBOhen dea. «u benetzenden Stoffen geeohlagen wird, indes die reaktionärreudigen Atome beide stoffe angreifen· Di« Oberflächenspannung des Metallee bzw· dee Halbleiter» oat Hei Texwendung dee verfahren« naoh der Erfindung keinen Slnflud auf die Benetzung aehr.
Die Erfindung hat eioii uls β ehr geeignet erwieaen» wenn ein Geroaniuaeinkriatall mit Blui benetzt werden soll· Sie Reduktion dee Genoaniumdioxyds erfolgt dabei duroh Erhitaen in inertes Gtaa »it Waeueretoffsueats bei iemperaturen oberlialb von 65O0C bie unterhalb der .ichiaeletemperatftr dee
Geeignet let da» Verfahren gem'iii der Eii'inöuni auch zu* BenetB«n von Halbleiterkrietallen mit Indiutar «ofUr Indiuaoxyd verwendet wird«
Das Verfahren erweiet äidi «bei «Taeneo ale geeignet au« *
Verlütea von HallIeItern ait Metallen· die mit den HaIuleitern Legierungen eingehen können. £s kann beiepiele- «eiee Hiekel unt^rlialb eeinee bchaelsspunkte· mittels au·
reduzierten Qerüutniuft» auf einen aera«-
aiuakrietall gelötet werden, ohne daB da« Lot aerataniua dabei geeohBoleen wird· Pöyeikaliach ist der Yerlötungevorgang dabei ebenso nie sei dea Benetsen «u erklär« «ad «war dadureh, «ad dl« reaktionafieudigen aerManiiw atoee da« Qeriuaaiu« das Xristallea und «as ITiekel angreife* und dl« Gitter verbinden»
BAD 909839/03A9 -4-
U46221
Weiterhin w«rd*a naob. dew. Terfahren ge«li der lrfindung auoh Halbleiterkrieteile »it eraphit TerltStet. AX« wird dabei Il»i»xyd benutet,
Helbleiteroxj« kann e»er «nek direkt «le nleht-aoha·!- aeodea Iret «wieohen cw·! Metall·» Yerwendet v«rd«m· 8· wir* «it 4·« Verfahren ««oh der lrfindvng Torteilhefterwelee Iickel ait Iiekel TtrlOtet.
Bei allem Anwendungen Äee Terfehreme geaäf der maS darauf geaehtet werden, dal dl« wm behandelnflen Ϊ1Μ-chen klein «lad. Xnderenfella wörd· der reduetexenie Waeaeretoff daran g«hind«rt werden, an «11· Teile de· e«raaniuadioxyde heransukomaen. fit· inneren riäohent·- reiehe blieben dann unbenetet, waa «u ungl«ieh«Äligea liniegieren und unrollatändigen Terlötungen ftthrt.
Auf eine au ¥enet»ende OberflÄohe eines öermaniumplättehene wird «la· Geraaniuadiaxyd-PulTerichiolit gabraeht· Auf dl· 0er«aniuadiO3cyd«ehieht wird Blei gele«t· Diea· Anordnung wird In inertem Öaa alt einea Zuaat* τοη Waaeer-•toff auf 750°0 «rhitat· Da» eernaniujadloacyd wird dabei r«dusiert| gleiehieitig lubllftiert ea und gelangt aa die OberflÄehen de« aermaniuekriatallea und dea Blei·. Saa Blei benetst denaoh gleiehmlftig dea ffermaniumkriatall. Babei bilden «lea gleiohmftJige und ebene Ob ergangeflAohen ■wieohea der IitsientngsKOAe mad d·« unlegierten Kristall·
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909839/03A9
1U6221
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909839/0349
• BlvQ-ORlGINAL
lioktlplättcli·* g«X«gt# Si· g««a»t« Anordnung »ir* Aaraaf bla Ια inert·« α«· mit «in·· Zusats toä Wa»»er«i©ff auf TOO0C erhltc** Ha» dabei dar«* Reduktion gebildet· reitt« öer*aalu« verbindet da· Qeraaaiuaplatte&ett eiwrendfr«! «it In Hi«k«lplattea«a.
Attfff frhrm*gal*«l«Pi«ll Tt
eiaea (Jraphitkörper wird Germanin«· ioiydpttlTer g·- ¥rmoht. Di··· AnoxAnaa^ wir* In ·1μ·γ WmeseratoifhaXiii »uf 70O0O «rhititt Da· r«ftaai«rt« 0«re*aiuM sieh AaIMl »1· aomioht Mf d·« ör»pJiitkörp«x ai·- AbktlhXuBt «·· öwuphlikörp·!« alt <*r G*r«*- wixi «Hf Al··« HeioxytpolTer g«1imolit· Auf Am· BXeioxyApulY·» «irA «la eenmoliudürlstmll gelegt· Die- ·· if^ftTHi**^ wiiA im der waaeentoffbaXtlgen Ateoephär· wieder auf 700* 0 erhitit. JBa «itetelit Aal»·!. ·1α· ei.hr faat« Yerliiiidung svleehen d«a Graphit «aA %mm Germanitui.
«In aeraaniBLeplIttofcim werden IXeioj^AfulTer omd «la· •Xaiplatte gelegt. Si· AjiorAaaag wir* im eiaer Waaeeretoffa-lBoephäre aof 700f Q erbitet. Sa· durea leduktioa geweaaea« IXeI eehmiXs-l dabei and yerbindet al« Ie* da· Oeraaaiua «»Α Aa·
A«f «la liokelpllttohea wird öereaaittMdieaydfttlTer ge- »«a«ht» AKf die·«* £»!*·* wir* «la weiter·« «UkeXpHttohea gelegt· BIe AMrdaaag wir* la eiaer Wa»»*r»tofrat«o«pa» V« **f 70«· 0 erhltat· 8m e*raaal»aAi#3Qrd wird daeei «m atw*ar«a ierwMiaji r«Attaiert ajU rerlötet al« aieht-eehaeX-L>t Al« Ii«k«X9Utt«A4· «lt«iaaa*«r·
BAD ORIGfNAL 909 8 39/0349

Claims (1)

  1. U46221
    Sat ent aiiöpr Liehe ι
    1 · Terianren w» Benetzen, und Verbinden ran Halbleitern und Metallen nit Halbleitern trad Metallen, dadarofe gekennselenaet* daß die au benetzenden und ca rorblndoaden iläoaon «dt olnets Oxy« eines Metalleβ oder Salbleiter· rereehen werden tmd die Anordnung in einer redosioronr den Ataoepaäre bi· wax ReAuiierung β·· Oxyde* ernltst wird» wöaaeh Mittels de· redueiertea Material· la deaeen tuaaittelVar auf die Sedaktion folgendes, remktionefreudigea Zuetand dl« atoffe benotet and Yerbunden «erden.
    2· Terfahron naoa Anepruoh 1» dadaren f«ketuweioi»iet,
    daß al· Oxyd Oeraaniuadioxyd eeaatst wird·
    3· Terfahren naok Αηβρχ-αοΐι 1» dadureh jekenaaeiohjaet,
    dafi als Oxyd Bleioxyd ren» endet wird»
    4· Terfahrea naoa Anapraon 1« dadaron gekenaseiehnety
    dafi al· Oxyd Iadiuaoxyd verwendot wird·
    5· Teriahren nach den AneprüoheÄ 1 fei· 4, daduron
    gelcennaeiohnet, dai dlo Hadaalorani In inertea das alt eines Zueate γοη Waeeeretoff awlsohan einer Temperator oberhalb 650° 0 and antorbalb do» aokeelapunktee der Materialien erfolgt·
    €· Tertanron naoix den Anapriiohen 1,2 and 5, dadarea gekenmceichaet, dal ait tele dee rodaslerton Öexmania»- dioxyd· eia aemuiiajwlnicriatall alt Blei bonotst wird.
    7« Terfahrea aaeh dan Anaprttchen 1, 4 und 5» daduroa «ekenaaeichnet, daft aittele do· rodaslerton Indiaaoxydo
    BAD ORIGINAL 909839/0349
    «in halbleitenier Einfcriete.ll, belapielsweiae au« aanltoi mit Indiu« Tsengtet wird·
    8· Terfehren nach den Aneprilehe» 1,2 und 5e dwduroh
    gtkeanmtlohnet, äaß mittels dti reflucierttn 0ermanl«mdloxyfi* Germanium mit !Tiefe«! rerbunaen wird,
    9· Verfahren neoh öen Aneprüchen 1,2 und 51 dadurch g«k«na«eichn#tf daß mit tele d·· Seraiftnixmäloxyde Nickel mit Hioktl Terlötet wird.
    10· Verfahren aeoh den AaaprUehem 1*5 und 5» da*
    gekennzeichnet, daß »ittele des redueierten Blwi-Metall, bei*ple3.eweiee aerraanivi», ait glas verlötet wird.
    11* Verfahren neoh den Aneprtiöhen 1, 3 tmd 5, dadurch gekeaaeeichnet, öaft Kitt·!« d·» reeueiertea Bleioxyde «in Halbleiter, belepielew^lia ßeraenluM, »it Terlötet wird·
    BAD
    909839/0349
DE19511446221 1951-01-28 1951-01-28 Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen Granted DE1446221A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19511446221 DE1446221A1 (de) 1951-01-28 1951-01-28 Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen
US87063A US3128538A (en) 1951-01-28 1961-02-06 Semiconductor-metal bonding method
GB8483/61A GB958524A (en) 1951-01-28 1961-03-08 Improvements in or relating to methods of wetting bodies and securing bodies together
FR855125A FR1288290A (fr) 1951-01-28 1961-03-09 Procédé d'humectation de semi-conducteurs et de métaux par des semi-conducteurs et des métaux

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19511446221 DE1446221A1 (de) 1951-01-28 1951-01-28 Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen
DEP0024590 1960-03-11

Publications (3)

Publication Number Publication Date
DE1446221A1 true DE1446221A1 (de) 1969-09-25
DE1446221B2 DE1446221B2 (de) 1973-10-11
DE1446221C3 DE1446221C3 (de) 1974-05-09

Family

ID=25752091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19511446221 Granted DE1446221A1 (de) 1951-01-28 1951-01-28 Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen

Country Status (3)

Country Link
US (1) US3128538A (de)
DE (1) DE1446221A1 (de)
GB (1) GB958524A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL291352A (de) * 1962-04-10 1900-01-01
US3295196A (en) * 1964-01-30 1967-01-03 Zaeschmar Guenther Method for attaching indium arsenide semiconductor to electrical leads
US3678569A (en) * 1970-07-15 1972-07-25 Globe Union Inc Method for forming ohmic contacts

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB483156A (en) * 1936-10-16 1938-04-13 Percy Warren Noble Improvements in and relating to the art of soldering
US2555001A (en) * 1947-02-04 1951-05-29 Bell Telephone Labor Inc Bonded article and method of bonding
US2964839A (en) * 1954-12-14 1960-12-20 Corning Glass Works Flux free bonded article and method
GB785467A (en) * 1954-12-23 1957-10-30 Gen Electric Co Ltd Improvements in or relating to the manufacture of semi-conductor devices
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material

Also Published As

Publication number Publication date
GB958524A (en) 1964-05-21
US3128538A (en) 1964-04-14
DE1446221C3 (de) 1974-05-09
DE1446221B2 (de) 1973-10-11

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Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
C3 Grant after two publication steps (3rd publication)