DE1446221A1 - Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen - Google Patents
Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und MetallenInfo
- Publication number
- DE1446221A1 DE1446221A1 DE19511446221 DE1446221A DE1446221A1 DE 1446221 A1 DE1446221 A1 DE 1446221A1 DE 19511446221 DE19511446221 DE 19511446221 DE 1446221 A DE1446221 A DE 1446221A DE 1446221 A1 DE1446221 A1 DE 1446221A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductors
- metals
- wetting
- soldered
- procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 9
- 150000002739 metals Chemical class 0.000 title claims description 5
- 238000009736 wetting Methods 0.000 title claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910000464 lead oxide Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 210000005069 ears Anatomy 0.000 claims 1
- 235000013601 eggs Nutrition 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 1
- 101150039516 ple3 gene Proteins 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229930194076 Germanin Natural products 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FIAFUQMPZJWCLV-UHFFFAOYSA-N suramin Chemical compound OS(=O)(=O)C1=CC(S(O)(=O)=O)=C2C(NC(=O)C3=CC=C(C(=C3)NC(=O)C=3C=C(NC(=O)NC=4C=C(C=CC=4)C(=O)NC=4C(=CC=C(C=4)C(=O)NC=4C5=C(C=C(C=C5C(=CC=4)S(O)(=O)=O)S(O)(=O)=O)S(O)(=O)=O)C)C=CC=3)C)=CC=C(S(O)(=O)=O)C2=C1 FIAFUQMPZJWCLV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/34—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material comprising compounds which yield metals when heated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
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- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Die Bonding (AREA)
- Amplifiers (AREA)
- Junction Field-Effect Transistors (AREA)
- Exhaust Gas After Treatment (AREA)
- Battery Electrode And Active Subsutance (AREA)
Description
Philipe Patentverwaltun;"· Cmb'i.
Ak*No. ER/p 329 H46221
9.3.1960
2*N&twmltaag »«bH.» «latent 1» ll»a«fcrt«*f«t*.7
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■ftikleltwlDrUtell i«fen«k«· M· Aaevia««* %*** i«aa aa
a··! ·»·!%·%» toi Iu Metall »«h«iUt· i«m amlHl«ltM<kvUtaU
*«n«t «ai la ii«««a «i*l»*l«rt.
Nnw tmtUtem a»t 4»ie«& <o«h i«a »a«kt«ll» iaf
iaa »«ba«l«MMt· »etall «ahyttlu&jai** iaf»3«· niMr
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iiaaht «ai «tait «! t «a» «taaa »«ivaaatea ta·«-
tlii«iMa»«Miaa ^««tUt· »aaaaii ¥tttit«t «i«a iaa Itotall
iaaa mst Iu M««a&U»«*tl««a» aaa· KMii »t« ataa
«agitaaüi , »^oi»l«««i·· JaUka«a«Utfv«l«·
909839/0349 ~f-
BAD ORIGINAL
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909839/0349
1U6221
eingeeehlossen 1st and dringt in diese «in« Auch ander«
Oxyde» wl· V isdutoxyd, liiekeloxyd oder Cadmiumoxyd, können
vorteilhaft un.;ewa iät «erden·
üb hat ei eh geaei^tf daü durcli die Heaktionafreudi /jkelt
von reduzierten Metall- und Halbleiteroxyden eine «Brück·«
KwiBOhen dea. «u benetzenden Stoffen geeohlagen wird, indes
die reaktionärreudigen Atome beide stoffe angreifen·
Di« Oberflächenspannung des Metallee bzw· dee Halbleiter»
oat Hei Texwendung dee verfahren« naoh der Erfindung
keinen Slnflud auf die Benetzung aehr.
Die Erfindung hat eioii uls β ehr geeignet erwieaen» wenn
ein Geroaniuaeinkriatall mit Blui benetzt werden soll·
Sie Reduktion dee Genoaniumdioxyds erfolgt dabei duroh
Erhitaen in inertes Gtaa »it Waeueretoffsueats bei iemperaturen
oberlialb von 65O0C bie unterhalb der .ichiaeletemperatftr
dee
Geeignet let da» Verfahren gem'iii der Eii'inöuni auch zu*
BenetB«n von Halbleiterkrietallen mit Indiutar «ofUr
Indiuaoxyd verwendet wird«
Verlütea von HallIeItern ait Metallen· die mit den HaIuleitern
Legierungen eingehen können. £s kann beiepiele-
«eiee Hiekel unt^rlialb eeinee bchaelsspunkte· mittels au·
reduzierten Qerüutniuft» auf einen aera«-
aiuakrietall gelötet werden, ohne daB da« Lot aerataniua
dabei geeohBoleen wird· Pöyeikaliach ist der Yerlötungevorgang
dabei ebenso nie sei dea Benetsen «u erklär«
«ad «war dadureh, «ad dl« reaktionafieudigen aerManiiw
atoee da« Qeriuaaiu« das Xristallea und «as ITiekel angreife*
und dl« Gitter verbinden»
BAD 909839/03A9 -4-
U46221
Weiterhin w«rd*a naob. dew. Terfahren ge«li der lrfindung
auoh Halbleiterkrieteile »it eraphit TerltStet. AX«
wird dabei Il»i»xyd benutet,
Helbleiteroxj« kann e»er «nek direkt «le nleht-aoha·!-
aeodea Iret «wieohen cw·! Metall·» Yerwendet v«rd«m· 8·
wir* «it 4·« Verfahren ««oh der lrfindvng Torteilhefterwelee
Iickel ait Iiekel TtrlOtet.
Bei allem Anwendungen Äee Terfehreme geaäf der
maS darauf geaehtet werden, dal dl« wm behandelnflen Ϊ1Μ-chen
klein «lad. Xnderenfella wörd· der reduetexenie
Waeaeretoff daran g«hind«rt werden, an «11· Teile de·
e«raaniuadioxyde heransukomaen. fit· inneren riäohent·-
reiehe blieben dann unbenetet, waa «u ungl«ieh«Äligea
liniegieren und unrollatändigen Terlötungen ftthrt.
Auf eine au ¥enet»ende OberflÄohe eines öermaniumplättehene
wird «la· Geraaniuadiaxyd-PulTerichiolit gabraeht·
Auf dl· 0er«aniuadiO3cyd«ehieht wird Blei gele«t· Diea·
Anordnung wird In inertem Öaa alt einea Zuaat* τοη Waaeer-•toff
auf 750°0 «rhitat· Da» eernaniujadloacyd wird dabei
r«dusiert| gleiehieitig lubllftiert ea und gelangt aa die
OberflÄehen de« aermaniuekriatallea und dea Blei·. Saa
Blei benetst denaoh gleiehmlftig dea ffermaniumkriatall.
Babei bilden «lea gleiohmftJige und ebene Ob ergangeflAohen
■wieohea der IitsientngsKOAe mad d·« unlegierten Kristall·
XIt
Za{6, wird alt pulTeriaerte« AljO« f·-
aieoht. Sm eeaieeh enthält dai«l einen hehen 7r«*»at-
«ate aa Za^O.· Ia dl«ea· ««alaeh wird ein deraaaluekrietall
•ingebettet, Sieee Anordnung wird in einer wa«e«r«t«ff-
• f -
909839/03A9
1U6221
aalti«·* AteMpa**· atf 75O#0 «salts*. Sm Al2O9 »li«
aakal aiaat T**aa4*rt· Im Ia4i*a hingen wir* r«4ar
si«rt, *a»liai·** an« e*kli«t ii«k Mf 4«» I*i*t*H »1·«
9a··! %il4«t »lea «ul 4·» öeraaniaekriatall «In· flu··!«·
ImiiÄÄeehieh* rna·, au· tar 1*11»· ttilw«i·· Ik 4·» Ixi-■tall
«iailffttAdlert· Β·1· A*ltÄil*a *er Aaor4nua« «itlit
laiim auf *«r O^rflÄfk· d··
l«r MtiwfrtTi«tall arkllt Aadurth «im«
ai« ««· mieht-l«gi«rt«a Irl»tallttll ti*·
«ad i Ü
ami *1 TTTt
•lag···**·*· SI··« jUMfinaag ·1»4 la «ia« faaa«i«toff «athalt«a4«tt
Ataoevalr· aai 7500O *rait«t. 9m
4a·· 1 »I·» vayfta4«rt* Sm !«jOj «1v4
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BAD ORIGfNAL 909 8 39/0349
Claims (1)
- U46221Sat ent aiiöpr Liehe ι1 · Terianren w» Benetzen, und Verbinden ran Halbleitern und Metallen nit Halbleitern trad Metallen, dadarofe gekennselenaet* daß die au benetzenden und ca rorblndoaden iläoaon «dt olnets Oxy« eines Metalleβ oder Salbleiter· rereehen werden tmd die Anordnung in einer redosioronr den Ataoepaäre bi· wax ReAuiierung β·· Oxyde* ernltst wird» wöaaeh Mittels de· redueiertea Material· la deaeen tuaaittelVar auf die Sedaktion folgendes, remktionefreudigea Zuetand dl« atoffe benotet and Yerbunden «erden.2· Terfahron naoa Anepruoh 1» dadaren f«ketuweioi»iet,daß al· Oxyd Oeraaniuadioxyd eeaatst wird·3· Terfahren naok Αηβρχ-αοΐι 1» dadureh jekenaaeiohjaet,dafi als Oxyd Bleioxyd ren» endet wird»4· Terfahrea naoa Anapraon 1« dadaron gekenaseiehnetydafi al· Oxyd Iadiuaoxyd verwendot wird·5· Teriahren nach den AneprüoheÄ 1 fei· 4, dadurongelcennaeiohnet, dai dlo Hadaalorani In inertea das alt eines Zueate γοη Waeeeretoff awlsohan einer Temperator oberhalb 650° 0 and antorbalb do» aokeelapunktee der Materialien erfolgt·€· Tertanron naoix den Anapriiohen 1,2 and 5, dadarea gekenmceichaet, dal ait tele dee rodaslerton Öexmania»- dioxyd· eia aemuiiajwlnicriatall alt Blei bonotst wird.7« Terfahrea aaeh dan Anaprttchen 1, 4 und 5» daduroa «ekenaaeichnet, daft aittele do· rodaslerton IndiaaoxydoBAD ORIGINAL 909839/0349«in halbleitenier Einfcriete.ll, belapielsweiae au« aanltoi mit Indiu« Tsengtet wird·8· Terfehren nach den Aneprilehe» 1,2 und 5e dwdurohgtkeanmtlohnet, äaß mittels dti reflucierttn 0ermanl«mdloxyfi* Germanium mit !Tiefe«! rerbunaen wird,9· Verfahren neoh öen Aneprüchen 1,2 und 51 dadurch g«k«na«eichn#tf daß mit tele d·· Seraiftnixmäloxyde Nickel mit Hioktl Terlötet wird.10· Verfahren aeoh den AaaprUehem 1*5 und 5» da*gekennzeichnet, daß »ittele des redueierten Blwi-Metall, bei*ple3.eweiee aerraanivi», ait glas verlötet wird.11* Verfahren neoh den Aneprtiöhen 1, 3 tmd 5, dadurch gekeaaeeichnet, öaft Kitt·!« d·» reeueiertea Bleioxyde «in Halbleiter, belepielew^lia ßeraenluM, »it Terlötet wird·BAD909839/0349
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19511446221 DE1446221A1 (de) | 1951-01-28 | 1951-01-28 | Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen |
US87063A US3128538A (en) | 1951-01-28 | 1961-02-06 | Semiconductor-metal bonding method |
GB8483/61A GB958524A (en) | 1951-01-28 | 1961-03-08 | Improvements in or relating to methods of wetting bodies and securing bodies together |
FR855125A FR1288290A (fr) | 1951-01-28 | 1961-03-09 | Procédé d'humectation de semi-conducteurs et de métaux par des semi-conducteurs et des métaux |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19511446221 DE1446221A1 (de) | 1951-01-28 | 1951-01-28 | Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen |
DEP0024590 | 1960-03-11 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE1446221A1 true DE1446221A1 (de) | 1969-09-25 |
DE1446221B2 DE1446221B2 (de) | 1973-10-11 |
DE1446221C3 DE1446221C3 (de) | 1974-05-09 |
Family
ID=25752091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19511446221 Granted DE1446221A1 (de) | 1951-01-28 | 1951-01-28 | Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen |
Country Status (3)
Country | Link |
---|---|
US (1) | US3128538A (de) |
DE (1) | DE1446221A1 (de) |
GB (1) | GB958524A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL291352A (de) * | 1962-04-10 | 1900-01-01 | ||
US3295196A (en) * | 1964-01-30 | 1967-01-03 | Zaeschmar Guenther | Method for attaching indium arsenide semiconductor to electrical leads |
US3678569A (en) * | 1970-07-15 | 1972-07-25 | Globe Union Inc | Method for forming ohmic contacts |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB483156A (en) * | 1936-10-16 | 1938-04-13 | Percy Warren Noble | Improvements in and relating to the art of soldering |
US2555001A (en) * | 1947-02-04 | 1951-05-29 | Bell Telephone Labor Inc | Bonded article and method of bonding |
US2964839A (en) * | 1954-12-14 | 1960-12-20 | Corning Glass Works | Flux free bonded article and method |
GB785467A (en) * | 1954-12-23 | 1957-10-30 | Gen Electric Co Ltd | Improvements in or relating to the manufacture of semi-conductor devices |
US3070466A (en) * | 1959-04-30 | 1962-12-25 | Ibm | Diffusion in semiconductor material |
-
1951
- 1951-01-28 DE DE19511446221 patent/DE1446221A1/de active Granted
-
1961
- 1961-02-06 US US87063A patent/US3128538A/en not_active Expired - Lifetime
- 1961-03-08 GB GB8483/61A patent/GB958524A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB958524A (en) | 1964-05-21 |
US3128538A (en) | 1964-04-14 |
DE1446221C3 (de) | 1974-05-09 |
DE1446221B2 (de) | 1973-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
SH | Request for examination between 03.10.1968 and 22.04.1971 | ||
C3 | Grant after two publication steps (3rd publication) |