NL291352A - - Google Patents
Info
- Publication number
- NL291352A NL291352A NL291352DA NL291352A NL 291352 A NL291352 A NL 291352A NL 291352D A NL291352D A NL 291352DA NL 291352 A NL291352 A NL 291352A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13001—Core members of the bump connector
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/1901—Structure
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- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US186467A US3178804A (en) | 1962-04-10 | 1962-04-10 | Fabrication of encapsuled solid circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
NL291352A true NL291352A (xx) | 1900-01-01 |
Family
ID=22685080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL291352D NL291352A (xx) | 1962-04-10 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3178804A (xx) |
BE (1) | BE630858A (xx) |
CH (1) | CH434481A (xx) |
GB (1) | GB991267A (xx) |
NL (1) | NL291352A (xx) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3256465A (en) * | 1962-06-08 | 1966-06-14 | Signetics Corp | Semiconductor device assembly with true metallurgical bonds |
US3270146A (en) * | 1963-03-14 | 1966-08-30 | Motorola Inc | Hearing aid |
US3300832A (en) * | 1963-06-28 | 1967-01-31 | Rca Corp | Method of making composite insulatorsemiconductor wafer |
US3456158A (en) * | 1963-08-08 | 1969-07-15 | Ibm | Functional components |
US3354354A (en) * | 1964-03-24 | 1967-11-21 | Rca Corp | Oxide bonded semiconductor wafer utilizing intrinsic and degenerate material |
US3699406A (en) * | 1963-12-26 | 1972-10-17 | Gen Electric | Semiconductor gate-controlled pnpn switch |
US3262022A (en) * | 1964-02-13 | 1966-07-19 | Gen Micro Electronics Inc | Packaged electronic device |
US3320485A (en) * | 1964-03-30 | 1967-05-16 | Trw Inc | Dielectric isolation for monolithic circuit |
US3393349A (en) * | 1964-04-30 | 1968-07-16 | Motorola Inc | Intergrated circuits having isolated islands with a plurality of semiconductor devices in each island |
US3289046A (en) * | 1964-05-19 | 1966-11-29 | Gen Electric | Component chip mounted on substrate with heater pads therebetween |
GB1039915A (en) * | 1964-05-25 | 1966-08-24 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
US3386008A (en) * | 1964-08-31 | 1968-05-28 | Cts Corp | Integrated circuit |
US3489953A (en) * | 1964-09-18 | 1970-01-13 | Texas Instruments Inc | Stabilized integrated circuit and process for fabricating same |
US3323198A (en) * | 1965-01-27 | 1967-06-06 | Texas Instruments Inc | Electrical interconnections |
DE1293308B (de) * | 1966-01-21 | 1969-04-24 | Siemens Ag | Transistoranordnung zur Strombegrenzung |
GB1125745A (en) * | 1966-03-16 | 1968-08-28 | English Electric Leo Marconi C | Attaching integrated circuits to substrates |
US3497929A (en) * | 1966-05-31 | 1970-03-03 | Stanford Research Inst | Method of making a needle-type electron source |
DE1564863C2 (de) * | 1966-06-28 | 1983-04-28 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Planartransistor mit einer Emitter-, einer Basis- und einer Kollektorzone |
US3413497A (en) * | 1966-07-13 | 1968-11-26 | Hewlett Packard Co | Insulated-gate field effect transistor with electrostatic protection means |
US3432920A (en) * | 1966-12-01 | 1969-03-18 | Rca Corp | Semiconductor devices and methods of making them |
US3496631A (en) * | 1967-02-08 | 1970-02-24 | Gordon Kowa Cheng Chen | Manufacture of semi-conductor devices |
US3543394A (en) * | 1967-05-24 | 1970-12-01 | Sheldon L Matlow | Method for depositing thin films in controlled patterns |
US3497774A (en) * | 1967-06-07 | 1970-02-24 | Beckman Instruments Inc | Electrical circuit module and method of manufacture |
US3497947A (en) * | 1967-08-18 | 1970-03-03 | Frank J Ardezzone | Miniature circuit connection and packaging techniques |
US3529123A (en) * | 1968-07-24 | 1970-09-15 | Smith Corp A O | Electron beam heating with controlled beam |
US3851382A (en) * | 1968-12-02 | 1974-12-03 | Telefunken Patent | Method of producing a semiconductor or thick film device |
US3860783A (en) * | 1970-10-19 | 1975-01-14 | Bell Telephone Labor Inc | Ion etching through a pattern mask |
US3659035A (en) * | 1971-04-26 | 1972-04-25 | Rca Corp | Semiconductor device package |
US3737742A (en) * | 1971-09-30 | 1973-06-05 | Trw Inc | Monolithic bi-polar semiconductor device employing cermet for both schottky barrier and ohmic contact |
JPS558260Y2 (xx) * | 1973-09-06 | 1980-02-23 | ||
JPS5512430Y2 (xx) * | 1974-08-05 | 1980-03-18 | ||
US4126879A (en) * | 1977-09-14 | 1978-11-21 | Rca Corporation | Semiconductor device with ballast resistor adapted for a transcalent device |
DE2840776A1 (de) * | 1978-09-19 | 1980-03-27 | Siemens Ag | Halbleiterbauelement mit passivierender schutzschicht |
DE3831394A1 (de) * | 1988-09-15 | 1990-03-22 | Prithwis Basu | Verfahren und vorrichtung zum kontaktieren eines elektrischen leitungsdrahtes mit kontaktstellen auf einer leiterplatte |
GB2244374B (en) * | 1990-05-22 | 1994-10-05 | Stc Plc | Improvements in hybrid circuits |
US10583302B2 (en) | 2016-09-23 | 2020-03-10 | Greatbatch Ltd. | Gold wetting on ceramic surfaces upon coating with titanium hydride |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2680220A (en) * | 1950-06-09 | 1954-06-01 | Int Standard Electric Corp | Crystal diode and triode |
DE1446221A1 (de) * | 1951-01-28 | 1969-09-25 | Philips Patentverwaltung | Verfahren zum Benetzen und Verbinden von Halbleitern und Metallen mit Halbleitern und Metallen |
DE896827C (de) * | 1951-09-08 | 1953-11-16 | Licentia Gmbh | Verfahren zur formgebenden Bearbeitung von kristallenen Halbleiterkoerpern |
DE876419C (de) * | 1951-09-09 | 1953-05-11 | Licentia Gmbh | Verfahren zum Herstellen von elektrischen und/oder mechanischen Verbindungen |
US2898519A (en) * | 1955-11-14 | 1959-08-04 | Erie Resistor Corp | Printed circuit assembly |
US3042998A (en) * | 1957-05-06 | 1962-07-10 | Sperry Gyroscope Co Ltd | Slip ring assembly |
US3029366A (en) * | 1959-04-22 | 1962-04-10 | Sprague Electric Co | Multiple semiconductor assembly |
US2971138A (en) * | 1959-05-18 | 1961-02-07 | Rca Corp | Circuit microelement |
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
US3059322A (en) * | 1961-03-17 | 1962-10-23 | Grady L Teague | Method of making a collapsible antenna of wire mesh |
-
0
- BE BE630858D patent/BE630858A/xx unknown
- NL NL291352D patent/NL291352A/xx unknown
-
1962
- 1962-04-10 US US186467A patent/US3178804A/en not_active Expired - Lifetime
-
1963
- 1963-04-03 CH CH423463A patent/CH434481A/de unknown
- 1963-04-09 GB GB14100/63A patent/GB991267A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH434481A (de) | 1967-04-30 |
GB991267A (en) | 1965-05-05 |
BE630858A (xx) | 1900-01-01 |
US3178804A (en) | 1965-04-20 |