GB897077A - A process for use in the production of a semi-conductor device - Google Patents

A process for use in the production of a semi-conductor device

Info

Publication number
GB897077A
GB897077A GB9184/61A GB918461A GB897077A GB 897077 A GB897077 A GB 897077A GB 9184/61 A GB9184/61 A GB 9184/61A GB 918461 A GB918461 A GB 918461A GB 897077 A GB897077 A GB 897077A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor device
production
soldering
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9184/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB897077A publication Critical patent/GB897077A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2924/01094—Plutonium [Pu]
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/30—Technical effects
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    • H01L2924/351—Thermal stress

Abstract

A silver foil is soldered to a molybdenum plate by means of a soldering foil comprising a copper-silver eutectic with 4% nickel and 4% manganese added thereto. The soldering is carried out at 850 DEG C. and forms part of a manufacturing process for a semi-conductor device (see Group XXXVI).
GB9184/61A 1960-03-11 1961-03-13 A process for use in the production of a semi-conductor device Expired GB897077A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES67522A DE1116827B (en) 1960-03-11 1960-03-11 Method for producing a semiconductor arrangement with at least one alloy electrode

Publications (1)

Publication Number Publication Date
GB897077A true GB897077A (en) 1962-05-23

Family

ID=7499620

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9184/61A Expired GB897077A (en) 1960-03-11 1961-03-13 A process for use in the production of a semi-conductor device

Country Status (3)

Country Link
CH (1) CH399598A (en)
DE (1) DE1116827B (en)
GB (1) GB897077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012107482A2 (en) 2011-02-08 2012-08-16 Abb Research Ltd Power semiconductor module
EP2528092A1 (en) * 2011-05-27 2012-11-28 ABB Research Ltd. Semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH391113A (en) * 1961-11-17 1965-04-30 Bbc Brown Boveri & Cie Solder connection for semiconductor elements
DE1272457B (en) * 1963-07-18 1968-07-11 Philips Patentverwaltung Method for manufacturing a semiconductor device
DE3937810C1 (en) * 1989-11-14 1991-03-07 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co Kg, 4788 Warstein, De Carrier plate with soft-soldered circuit substrate - has spacing wires of approximately same coefft. of thermal expansion as solder to limit loading of substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL190331A (en) * 1954-08-26 1900-01-01

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012107482A2 (en) 2011-02-08 2012-08-16 Abb Research Ltd Power semiconductor module
WO2012107482A3 (en) * 2011-02-08 2013-03-28 Abb Research Ltd Power semiconductor module
CN103370786A (en) * 2011-02-08 2013-10-23 Abb研究有限公司 Power semiconductor module
CN103370786B (en) * 2011-02-08 2016-09-14 Abb研究有限公司 Power semiconductor modular
EP2528092A1 (en) * 2011-05-27 2012-11-28 ABB Research Ltd. Semiconductor device

Also Published As

Publication number Publication date
DE1116827B (en) 1961-11-09
CH399598A (en) 1965-09-30

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