NL84061C - - Google Patents
Info
- Publication number
- NL84061C NL84061C NL84061DA NL84061C NL 84061 C NL84061 C NL 84061C NL 84061D A NL84061D A NL 84061DA NL 84061 C NL84061 C NL 84061C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1256—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a variable inductance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1296—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the feedback circuit comprising a transformer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35423A US2569347A (en) | 1948-06-26 | 1948-06-26 | Circuit element utilizing semiconductive material |
US91593A US2623102A (en) | 1948-06-26 | 1949-05-05 | Circuit element utilizing semiconductive materials |
US91594A US2681993A (en) | 1948-06-26 | 1949-05-05 | Circuit element utilizing semiconductive materials |
Publications (1)
Publication Number | Publication Date |
---|---|
NL84061C true NL84061C (de) |
Family
ID=27364846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL84061D NL84061C (de) | 1948-06-26 |
Country Status (7)
Country | Link |
---|---|
US (2) | US2623102A (de) |
BE (1) | BE489418A (de) |
CH (1) | CH282854A (de) |
DE (1) | DE814487C (de) |
FR (1) | FR986263A (de) |
GB (1) | GB700231A (de) |
NL (1) | NL84061C (de) |
Families Citing this family (139)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE492599A (de) * | 1948-12-30 | |||
DE973206C (de) * | 1949-05-31 | 1959-12-24 | Siemens Ag | Regelbarer Widerstand |
DE976468C (de) * | 1949-08-15 | 1963-09-19 | Licentia Gmbh | Verfahren zum Herstellen eines UEberschusshalbleiters aus einem Defekthalbleiter |
US2792538A (en) * | 1950-09-14 | 1957-05-14 | Bell Telephone Labor Inc | Semiconductor translating devices with embedded electrode |
NL90092C (de) * | 1950-09-14 | 1900-01-01 | ||
US2950425A (en) * | 1950-09-14 | 1960-08-23 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
BE523775A (de) * | 1950-09-29 | |||
DE1015153B (de) * | 1951-08-24 | 1957-09-05 | Western Electric Co | Halbleiter-Verstaerker mit einem Koerper aus Einkristall-Halbleitermaterial |
DE968125C (de) * | 1951-09-24 | 1958-01-16 | Licentia Gmbh | Verfahren zur Herstellung eines sperrschichtfreien Kontaktes mit Germanium |
US2788298A (en) * | 1951-11-02 | 1957-04-09 | Sylvania Electric Prod | Methods of growing crystals and making electrical translators |
FR1067783A (fr) * | 1951-12-18 | 1954-06-18 | Int Standard Electric Corp | Surface redresseuse comportant du silicium ou du germanium |
US2736849A (en) * | 1951-12-31 | 1956-02-28 | Hazeltine Research Inc | Junction-type transistors |
US2757323A (en) * | 1952-02-07 | 1956-07-31 | Gen Electric | Full wave asymmetrical semi-conductor devices |
NL176299B (nl) * | 1952-03-10 | Hydrotech Int Inc | Inrichting voor het losneembaar afsluiten van pijpleidingen. | |
US2897105A (en) * | 1952-04-19 | 1959-07-28 | Ibm | Formation of p-n junctions |
US2655625A (en) * | 1952-04-26 | 1953-10-13 | Bell Telephone Labor Inc | Semiconductor circuit element |
US2667607A (en) * | 1952-04-26 | 1954-01-26 | Bell Telephone Labor Inc | Semiconductor circuit element |
US2651009A (en) * | 1952-05-03 | 1953-09-01 | Bjorksten Res Lab Inc | Transistor design |
US2736822A (en) * | 1952-05-09 | 1956-02-28 | Gen Electric | Hall effect apparatus |
DE976216C (de) * | 1952-05-23 | 1963-05-09 | Telefunken Patent | Schaltungsanordnung zur Anodenstromversorgung von Roehrengeraeten |
US2714566A (en) * | 1952-05-28 | 1955-08-02 | Rca Corp | Method of treating a germanium junction rectifier |
BE520380A (de) * | 1952-06-02 | |||
DE1007438B (de) * | 1952-06-13 | 1957-05-02 | Rca Corp | Flaechentransistor nach dem Legierungsprinzip |
NL179061C (nl) * | 1952-06-13 | Dow Chemical Co | Werkwijze ter bereiding van een schuimmassa uit copolymeren van een aromatisch monovinylideen-monomeer en een ethenisch onverzadigd carbonzuuranhydride, alsmede de hieruit vervaardigde schuimvormige voorwerpen. | |
NL299567A (de) * | 1952-06-14 | |||
DE954624C (de) * | 1952-06-19 | 1956-12-20 | Western Electric Co | Hochfrequenz-Halbleiterverstaerker |
DE958393C (de) * | 1952-07-22 | 1957-02-21 | Western Electric Co | Signaluebertragungsanordnung mit einem Transistor mit vier Zonen verschiedenen Leitfaehigkeitstyps |
NL180750B (nl) * | 1952-08-20 | Bristol Myers Co | Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten. | |
BE523522A (de) * | 1952-10-15 | |||
DE1212640B (de) * | 1952-10-24 | 1966-03-17 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelements mit einem durch Waermebehandeln zusammengefuegten Halbleiterkoerper |
US2778956A (en) * | 1952-10-31 | 1957-01-22 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
US2805397A (en) * | 1952-10-31 | 1957-09-03 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
US2953730A (en) * | 1952-11-07 | 1960-09-20 | Rca Corp | High frequency semiconductor devices |
US2795742A (en) * | 1952-12-12 | 1957-06-11 | Bell Telephone Labor Inc | Semiconductive translating devices utilizing selected natural grain boundaries |
BE525386A (de) * | 1952-12-29 | |||
NL104654C (de) * | 1952-12-31 | 1900-01-01 | ||
NL95282C (de) * | 1953-01-13 | |||
US2817613A (en) * | 1953-01-16 | 1957-12-24 | Rca Corp | Semi-conductor devices with alloyed conductivity-type determining substance |
BE525823A (de) * | 1953-01-21 | |||
BE526156A (de) * | 1953-02-02 | |||
DE966276C (de) * | 1953-03-01 | 1957-07-18 | Siemens Ag | Halbleiteranordnung mit wenigstens zwei Steuerelektroden oder Steuerelektrodengruppenfuer elektronische Abtast- oder Schaltanordnungen |
US2823148A (en) * | 1953-03-02 | 1958-02-11 | Rca Corp | Method for removing portions of semiconductor device electrodes |
DE977618C (de) * | 1953-03-12 | 1967-08-31 | Deutsche Bundespost | Verfahren zur Herstellung eines Transistors der Schichtenbauart mit zwischen Emitterund Kollektor befindlicher duenner Basisschicht |
US2849342A (en) * | 1953-03-17 | 1958-08-26 | Rca Corp | Semiconductor devices and method of making them |
DE977684C (de) * | 1953-03-25 | 1968-05-02 | Siemens Ag | Halbleiteranordnung |
DE969464C (de) * | 1953-05-01 | 1958-06-04 | Philips Nv | Transistor mit einem halbleitenden Koerper, z.B. aus Germanium |
BE528756A (de) * | 1953-05-11 | |||
US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
DE1105523B (de) * | 1953-05-26 | 1961-04-27 | Philips Nv | Transistor |
BE529899A (de) * | 1953-06-26 | |||
US2984752A (en) * | 1953-08-13 | 1961-05-16 | Rca Corp | Unipolar transistors |
US2860291A (en) * | 1953-09-03 | 1958-11-11 | Texas Instruments Inc | Junction type transistor structure |
US2861017A (en) * | 1953-09-30 | 1958-11-18 | Honeywell Regulator Co | Method of preparing semi-conductor devices |
BE532508A (de) * | 1953-10-16 | |||
DE1047947B (de) * | 1953-11-19 | 1958-12-31 | Siemens Ag | Gleichrichtende oder verstaerkende Halbleiteranordnung mit durch ein aeusseres elektrisches und/oder magnetisches Feld veraenderlichem Widerstand |
DE1021488B (de) * | 1954-02-19 | 1957-12-27 | Deutsche Bundespost | Halbleiter-Kristallode der Schichtenbauart |
US3010857A (en) * | 1954-03-01 | 1961-11-28 | Rca Corp | Semi-conductor devices and methods of making same |
NL193595A (de) * | 1954-03-05 | |||
US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
NL94819C (de) * | 1954-04-01 | |||
US2769906A (en) * | 1954-04-14 | 1956-11-06 | Rca Corp | Junction transistor oscillator circuits |
US2870421A (en) * | 1954-05-03 | 1959-01-20 | Rca Corp | Transistor reactance circuit |
US2736847A (en) * | 1954-05-10 | 1956-02-28 | Hughes Aircraft Co | Fused-junction silicon diodes |
BE553173A (de) * | 1954-05-10 | |||
DE1046195B (de) * | 1954-05-18 | 1958-12-11 | Siemens Ag | pnp- bzw. npn-Transistor mit zwei flaechenhaften pn-UEbergaengen und Schaltung unter Verwendung eines solchen Transistors |
BE538611A (de) * | 1954-06-02 | 1900-01-01 | ||
DE1021082B (de) * | 1954-06-02 | 1957-12-19 | Siemens Ag | Flaechentransistor mit fuenf Elektroden, die an fuenf abwechselnd aufeinanderfolgenden Halbleiterschichten vom n-Typ und p-Typ anliegen, deren zweite und vierte Schicht als Basisschichten dienen |
BE539001A (de) * | 1954-06-15 | |||
CA617972A (en) * | 1954-06-21 | 1961-04-11 | Westinghouse Electric Corporation | Electronic switch device |
DE1129632B (de) * | 1954-06-28 | 1962-05-17 | Licentia Gmbh | Lichtelektrische Halbleiteranordnung |
DE1089047B (de) * | 1955-03-02 | 1960-09-15 | Siemens Ag | Einrichtung mit einem Halbleiterkoerper mit magnetfeldabhaengigem Widerstand |
NL92927C (de) * | 1954-07-27 | |||
US2829075A (en) * | 1954-09-09 | 1958-04-01 | Rca Corp | Field controlled semiconductor devices and methods of making them |
US3059123A (en) * | 1954-10-28 | 1962-10-16 | Bell Telephone Labor Inc | Internal field transistor |
DE1240188B (de) * | 1954-10-29 | 1967-05-11 | Telefunken Patent | Verfahren zum Herstellen von Halbleiterbauelementen mit einem oder mehreren einlegierten p-n-UEbergaengen |
DE1041163B (de) * | 1955-03-02 | 1958-10-16 | Licentia Gmbh | Elektrisch steuerbares Halbleitersystem, z. B. Flaechentransistor, aus einem einkristallinen Halbleiterkoerper |
US2948836A (en) * | 1955-03-30 | 1960-08-09 | Raytheon Co | Electrode connections to semiconductive bodies |
NL212349A (de) * | 1955-04-22 | 1900-01-01 | ||
US2846592A (en) * | 1955-05-20 | 1958-08-05 | Ibm | Temperature compensated semiconductor devices |
US2895109A (en) * | 1955-06-20 | 1959-07-14 | Bell Telephone Labor Inc | Negative resistance semiconductive element |
US2792540A (en) * | 1955-08-04 | 1957-05-14 | Bell Telephone Labor Inc | Junction transistor |
US2856681A (en) * | 1955-08-08 | 1958-10-21 | Texas Instruments Inc | Method of fixing leads to silicon and article resulting therefrom |
US2843515A (en) * | 1955-08-30 | 1958-07-15 | Raytheon Mfg Co | Semiconductive devices |
US3039028A (en) * | 1955-09-26 | 1962-06-12 | Hoffman Electronics Corp | Double based diode |
DE1058632B (de) * | 1955-12-03 | 1959-06-04 | Deutsche Bundespost | Verfahren zur beliebigen Verringerung des Sperrwiderstandes einer Legierungs-elektrode von Halbleiteranordnungen |
DE1067933B (de) * | 1955-12-22 | 1959-10-29 | National Research Development Corporation, London; Vcrtr.: Dipl.-Ing. E. Schubert, Pat.-Anw., Siegen | Gesteuerte Halbleiteranordnung mit zwei Elektroden. 1'9. 12. 56. Großbritannien |
DE1207012B (de) * | 1955-12-24 | 1965-12-16 | Telefunken Patent | Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode |
DE1092130B (de) * | 1955-12-29 | 1960-11-03 | Honeywell Regulator Co | Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper |
GB812550A (en) * | 1956-02-23 | 1959-04-29 | Nat Res Dev | Improvements in or relating to semiconductor signal translating devices |
US2863070A (en) * | 1956-03-21 | 1958-12-02 | Gen Electric | Double-base diode gated amplifier |
DE1092515B (de) * | 1956-04-13 | 1960-11-10 | Siemens Ag | Kaskadenverstaerkerschaltung mit Transistoren |
DE1166381B (de) * | 1956-07-06 | 1964-03-26 | Siemens Ag | Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen |
DE1170555B (de) * | 1956-07-23 | 1964-05-21 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps |
DE1081152B (de) * | 1956-09-01 | 1960-05-05 | Licentia Gmbh | Elektrisch unsymmetrisch leitende Halbleiteranordnung, insbesondere Halbleitergleichrichter |
US2862840A (en) * | 1956-09-26 | 1958-12-02 | Gen Electric | Semiconductor devices |
US2853602A (en) * | 1956-09-27 | 1958-09-23 | Hazeltine Research Inc | Frequency-converter system having mixer and local oscillator gain controlled in opposite sense |
FR1184385A (fr) * | 1956-10-17 | 1959-07-21 | Thomson Houston Comp Francaise | Nouveau transistron à jonctions et dispositifs les utilisant |
DE977395C (de) * | 1956-12-20 | 1966-04-07 | Siemens Ag | Spannungsabhaengiger Halbleiterkondensator mit einem oder mehreren pn-UEbergaengen |
US3129338A (en) * | 1957-01-30 | 1964-04-14 | Rauland Corp | Uni-junction coaxial transistor and circuitry therefor |
BE566141A (de) * | 1957-02-27 | 1900-01-01 | ||
BE565907A (de) * | 1957-03-22 | |||
US3145328A (en) * | 1957-04-29 | 1964-08-18 | Raytheon Co | Methods of preventing channel formation on semiconductive bodies |
US2978595A (en) * | 1957-05-02 | 1961-04-04 | Ibm | Transistor level shifter |
US3211970A (en) * | 1957-05-06 | 1965-10-12 | Rca Corp | Semiconductor devices |
US2980769A (en) * | 1957-05-06 | 1961-04-18 | Westinghouse Electric Corp | Bidirectional multiplex transistor communication apparatus |
DE1078237B (de) * | 1957-06-29 | 1960-03-24 | Sony Kabushikikaisha Fa | Halbleiteranordnung, insbesondere Transistor |
DE1207508B (de) * | 1957-08-01 | 1965-12-23 | Siemens Ag | Halbleiterbauelement mit sperrfreien Kontakt-elektroden und Verfahren zum Herstellen |
DE1126997B (de) * | 1957-08-09 | 1962-04-05 | Rca Corp | Halbleiteranordnung, insbesondere fuer Schaltzwecke, und Verfahren zu deren Herstellung |
CH335368A (fr) * | 1957-12-28 | 1958-12-31 | Suisse Horlogerie | Transistor |
FR1193194A (fr) * | 1958-03-12 | 1959-10-30 | Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions | |
NL239104A (de) * | 1958-05-26 | 1900-01-01 | Western Electric Co | |
DE1079212B (de) * | 1958-06-30 | 1960-04-07 | Siemens Ag | Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode |
NL242787A (de) * | 1958-09-05 | |||
US3021461A (en) * | 1958-09-10 | 1962-02-13 | Gen Electric | Semiconductor device |
US3178633A (en) * | 1958-11-12 | 1965-04-13 | Transitron Electronic Corp | Semi-conductor circuit |
US3089037A (en) * | 1959-03-17 | 1963-05-07 | Hoffman Electronics Corp | Variable delay pulse stretcher using adjustable bias |
LU38605A1 (de) * | 1959-05-06 | |||
US2989713A (en) * | 1959-05-11 | 1961-06-20 | Bell Telephone Labor Inc | Semiconductor resistance element |
NL251527A (de) * | 1959-05-12 | |||
US2975344A (en) * | 1959-05-28 | 1961-03-14 | Tung Sol Electric Inc | Semiconductor field effect device |
GB955093A (de) * | 1959-07-31 | |||
NL121135C (de) * | 1960-01-29 | |||
DE1151605C2 (de) * | 1960-08-26 | 1964-02-06 | Telefunken Patent | Halbleiterbauelement |
NL268782A (de) * | 1960-08-30 | |||
US3195077A (en) * | 1960-09-06 | 1965-07-13 | Westinghouse Electric Corp | Semiconductor multisection r-c filter of tapered monolithic construction having progressively varied values of impedance per section |
DE1152762B (de) * | 1960-10-13 | 1963-08-14 | Deutsche Bundespost | Transistor zum Schalten mit teilweise fallender Emitterspannung-Emitterstrom-Charakteristik |
DE1160106B (de) * | 1960-11-11 | 1963-12-27 | Intermetall | Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen |
DE1203882B (de) * | 1961-01-27 | 1965-10-28 | Elektronik M B H | Verfahren zum Einbringen eines metallischen Gitters in eine einkristalline Zone eines Halbleiterbauelements |
DE1144849B (de) * | 1961-07-21 | 1963-03-07 | Ass Elect Ind | Steuerbarer Halbleitergleichrichter mit pnpn-Struktur |
US3219891A (en) * | 1961-09-18 | 1965-11-23 | Merck & Co Inc | Semiconductor diode device for providing a constant voltage |
US3297920A (en) * | 1962-03-16 | 1967-01-10 | Gen Electric | Semiconductor diode with integrated mounting and small area fused impurity junction |
NL293292A (de) * | 1962-06-11 | |||
US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
US3298082A (en) * | 1963-05-14 | 1967-01-17 | Hitachi Ltd | Method of making semiconductors and diffusion thereof |
US3274462A (en) * | 1963-11-13 | 1966-09-20 | Jr Keats A Pullen | Structural configuration for fieldeffect and junction transistors |
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CH543178A (de) * | 1972-03-27 | 1973-10-15 | Bbc Brown Boveri & Cie | Kontinuierlich steuerbares Leistungshalbleiterbauelement |
DE2516396C3 (de) * | 1975-04-15 | 1981-11-19 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement mit einer Diode |
US4241167A (en) * | 1979-05-25 | 1980-12-23 | The United States Of America As Represented By The Secretary Of The Navy | Electrolytic blocking contact to InP |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA272437A (en) * | 1925-10-22 | 1927-07-19 | Edgar Lilienfeld Julius | Electric current control mechanism |
US1949383A (en) * | 1930-02-13 | 1934-02-27 | Ind Dev Corp | Electronic device |
FR802364A (fr) * | 1935-03-09 | 1936-09-03 | Philips Nv | Système d'électrodes à conductibilité dissymétrique |
BE442069A (de) * | 1940-07-03 | |||
US2428400A (en) * | 1940-08-02 | 1947-10-07 | Hartford Nat Bank & Trust Co | Blocking-layer cells comprising one or more grids embedded in the blocking layer |
US2524035A (en) * | 1948-02-26 | 1950-10-03 | Bell Telphone Lab Inc | Three-electrode circuit element utilizing semiconductive materials |
US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
US2502488A (en) * | 1948-09-24 | 1950-04-04 | Bell Telephone Labor Inc | Semiconductor amplifier |
BE490958A (de) * | 1948-09-24 | |||
US2560594A (en) * | 1948-09-24 | 1951-07-17 | Bell Telephone Labor Inc | Semiconductor translator and method of making it |
US2586080A (en) * | 1949-10-11 | 1952-02-19 | Bell Telephone Labor Inc | Semiconductive signal translating device |
US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
-
0
- BE BE489418D patent/BE489418A/xx unknown
- NL NL84061D patent/NL84061C/xx active
-
1949
- 1949-05-05 US US91593A patent/US2623102A/en not_active Expired - Lifetime
- 1949-05-05 DE DEP41700A patent/DE814487C/de not_active Expired
- 1949-05-05 US US91594A patent/US2681993A/en not_active Expired - Lifetime
- 1949-05-17 FR FR986263D patent/FR986263A/fr not_active Expired
- 1949-06-10 GB GB15512/49A patent/GB700231A/en not_active Expired
- 1949-06-27 CH CH282854D patent/CH282854A/de unknown
Also Published As
Publication number | Publication date |
---|---|
DE814487C (de) | 1951-09-24 |
US2623102A (en) | 1952-12-23 |
CH282854A (de) | 1952-05-15 |
US2681993A (en) | 1954-06-22 |
BE489418A (de) | |
FR986263A (fr) | 1951-07-30 |
GB700231A (en) | 1953-11-25 |