BE553173A - - Google Patents

Info

Publication number
BE553173A
BE553173A BE553173DA BE553173A BE 553173 A BE553173 A BE 553173A BE 553173D A BE553173D A BE 553173DA BE 553173 A BE553173 A BE 553173A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE553173A publication Critical patent/BE553173A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/919Compensation doping
BE553173D 1954-05-10 BE553173A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US428472A US2845372A (en) 1954-05-10 1954-05-10 Grown junction type transistors and method of making same

Publications (1)

Publication Number Publication Date
BE553173A true BE553173A (de)

Family

ID=23699041

Family Applications (1)

Application Number Title Priority Date Filing Date
BE553173D BE553173A (de) 1954-05-10

Country Status (2)

Country Link
US (1) US2845372A (de)
BE (1) BE553173A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1214791B (de) * 1960-08-12 1966-04-21 Telefunken Patent Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2948836A (en) * 1955-03-30 1960-08-09 Raytheon Co Electrode connections to semiconductive bodies
US2984549A (en) * 1957-06-21 1961-05-16 Clevite Corp Semiconductor product and method
US3024148A (en) * 1957-08-30 1962-03-06 Minneapols Honeywell Regulator Methods of chemically polishing germanium
GB945742A (de) * 1959-02-06 Texas Instruments Inc
US3298082A (en) * 1963-05-14 1967-01-17 Hitachi Ltd Method of making semiconductors and diffusion thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
NL84061C (de) * 1948-06-26
NL88324C (de) * 1950-06-15
US2654059A (en) * 1951-05-26 1953-09-29 Bell Telephone Labor Inc Semiconductor signal translating device
US2736822A (en) * 1952-05-09 1956-02-28 Gen Electric Hall effect apparatus
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1214791B (de) * 1960-08-12 1966-04-21 Telefunken Patent Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen
DE1214791C2 (de) * 1960-08-12 1966-11-10 Telefunken Patent Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen

Also Published As

Publication number Publication date
US2845372A (en) 1958-07-29

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