CH335368A - Transistor - Google Patents

Transistor

Info

Publication number
CH335368A
CH335368A CH335368DA CH335368A CH 335368 A CH335368 A CH 335368A CH 335368D A CH335368D A CH 335368DA CH 335368 A CH335368 A CH 335368A
Authority
CH
Switzerland
Prior art keywords
transistor
Prior art date
Application number
Other languages
English (en)
Inventor
Luescher Jakob
Original Assignee
Suisse Horlogerie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suisse Horlogerie filed Critical Suisse Horlogerie
Publication of CH335368A publication Critical patent/CH335368A/fr

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/04Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • C08L27/06Homopolymers or copolymers of vinyl chloride
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L9/00Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
    • C08L9/02Copolymers with acrylonitrile

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
CH335368D 1957-12-28 1957-12-28 Transistor CH335368A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH5422657 1957-12-28

Publications (1)

Publication Number Publication Date
CH335368A true CH335368A (fr) 1958-12-31

Family

ID=4519135

Family Applications (1)

Application Number Title Priority Date Filing Date
CH335368D CH335368A (fr) 1957-12-28 1957-12-28 Transistor

Country Status (7)

Country Link
US (1) US3038087A (fr)
BE (1) BE573933A (fr)
CH (1) CH335368A (fr)
DE (1) DE1132662B (fr)
FR (1) FR1256523A (fr)
GB (1) GB905945A (fr)
NL (1) NL107737C (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1115837B (de) * 1958-09-04 1961-10-26 Intermetall Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper
DE1214791B (de) * 1960-08-12 1966-04-21 Telefunken Patent Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3735481A (en) * 1967-08-16 1973-05-29 Hitachi Ltd Method of manufacturing an integrated circuit having a transistor isolated by the collector region
US3611058A (en) * 1970-05-11 1971-10-05 Gen Motors Corp Varactor diode
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (fr) * 1948-06-26
NL79529C (fr) * 1948-09-24
NL90299C (fr) * 1950-03-21
NL83838C (fr) * 1952-12-01 1957-01-15
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
US2801348A (en) * 1954-05-03 1957-07-30 Rca Corp Semiconductor devices
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1115837B (de) * 1958-09-04 1961-10-26 Intermetall Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper
DE1214791B (de) * 1960-08-12 1966-04-21 Telefunken Patent Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen
DE1214791C2 (de) * 1960-08-12 1966-11-10 Telefunken Patent Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen

Also Published As

Publication number Publication date
NL107737C (fr) 1964-03-16
DE1132662B (de) 1962-07-05
FR1256523A (fr) 1961-03-24
US3038087A (en) 1962-06-05
GB905945A (en) 1962-09-12
BE573933A (fr) 1959-04-16

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