GB905945A - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB905945A
GB905945A GB40796/58A GB4079658A GB905945A GB 905945 A GB905945 A GB 905945A GB 40796/58 A GB40796/58 A GB 40796/58A GB 4079658 A GB4079658 A GB 4079658A GB 905945 A GB905945 A GB 905945A
Authority
GB
United Kingdom
Prior art keywords
base
emitter
collector
resistance
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40796/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SSIH Management Services SA
Original Assignee
SSIH Management Services SA
Societe Suisse pour lIindustrie Horlogere Management Services SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SSIH Management Services SA, Societe Suisse pour lIindustrie Horlogere Management Services SA filed Critical SSIH Management Services SA
Publication of GB905945A publication Critical patent/GB905945A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/04—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • C08L27/06—Homopolymers or copolymers of vinyl chloride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
    • C08L9/02—Copolymers with acrylonitrile

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

905,945. Transistors. SOC. SUISSE. POUR L'INDUSTRIE HORLOGERE S.A. Dec. 17, 1958 [Dec. 28, 1957], No. 40796/58 Class 37. [Also in Group XL (c)] In a transistor with two base electrodes disposed at different distances from the emitter the electrodes are so positioned that in response to an increasing base-collector reverse bias the collector space charge region expands to increase the resistance of the current path between one of the base electrodes and the emitter junction without materially altering the resistance of the path from the emitter junction to the other base electrode. In one embodiment, Fig. 2, the base electrodes b 1 and b of a junction transistor are in the form of concentric annuli disposed on opposite sides of an annular groove surrounding the emitter E. In operation, the collector voltage may be increased until the associated space charge region extends as shown by the broken line to the base of the groove to isolate base b from the emitter without appreciably affecting the resistance between the emitter and base b 1 . In an alternative arrangement (Fig. 3) in which the groove is dispensed with, the inner base electrode b 1 and emitter are disposed on a thickened part of the base region. A further alternative shown in Fig. 5 is to mount the emitter and inner base electrode on a region of much lower resistivity than the remainder of the base zone into which the space charge region will only slightly penetrate. In the device shown in Fig. 4, two additional annular zones C 1 , C 2 of the same conductivity type as the collector zone C are provided which are electrically connected to the collector electrode proper. As the collector bias is increased the resistance of the channel between these annular zones is increased until the base electrode b is isolated. The transistors described may be used in bi-stable multivibrator circuits (see Group XL (c)).
GB40796/58A 1957-12-28 1958-12-17 Improvements in or relating to transistors Expired GB905945A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH5422657 1957-12-28

Publications (1)

Publication Number Publication Date
GB905945A true GB905945A (en) 1962-09-12

Family

ID=4519135

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40796/58A Expired GB905945A (en) 1957-12-28 1958-12-17 Improvements in or relating to transistors

Country Status (7)

Country Link
US (1) US3038087A (en)
BE (1) BE573933A (en)
CH (1) CH335368A (en)
DE (1) DE1132662B (en)
FR (1) FR1256523A (en)
GB (1) GB905945A (en)
NL (1) NL107737C (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
NL254591A (en) * 1960-08-12
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3735481A (en) * 1967-08-16 1973-05-29 Hitachi Ltd Method of manufacturing an integrated circuit having a transistor isolated by the collector region
US3611058A (en) * 1970-05-11 1971-10-05 Gen Motors Corp Varactor diode
JPS6174369A (en) * 1984-09-20 1986-04-16 Sony Corp Semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (en) * 1948-06-26
NL79529C (en) * 1948-09-24
NL90299C (en) * 1950-03-21
NL83838C (en) * 1952-12-01 1957-01-15
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
US2801348A (en) * 1954-05-03 1957-07-30 Rca Corp Semiconductor devices
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor

Also Published As

Publication number Publication date
US3038087A (en) 1962-06-05
DE1132662B (en) 1962-07-05
BE573933A (en) 1959-04-16
CH335368A (en) 1958-12-31
NL107737C (en) 1964-03-16
FR1256523A (en) 1961-03-24

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