US3038087A - Plural base transistor structure and circuit - Google Patents

Plural base transistor structure and circuit Download PDF

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Publication number
US3038087A
US3038087A US782760A US78276058A US3038087A US 3038087 A US3038087 A US 3038087A US 782760 A US782760 A US 782760A US 78276058 A US78276058 A US 78276058A US 3038087 A US3038087 A US 3038087A
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United States
Prior art keywords
base
emitter
electrode
collector
region
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US782760A
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English (en)
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Luscher Jakob
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SSIH Management Services SA
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SSIH Management Services SA
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/04—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • C08L27/06—Homopolymers or copolymers of vinyl chloride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
    • C08L9/02—Copolymers with acrylonitrile

Definitions

  • the present invention relates to a transistor comprising three layers constituting, respectively, the base, the emitter and the collector, each of the latter two being provided with an electrode to enable it to be connected to an electric circuit.
  • the transistor according to the invention is distinguished from known transistors by the fact that the said base is provided with two electrodes situated at different distances from the emittter, so that it is possible to connect the base to two independent electric circuits permitting of controlling the emitter current, means being provided for varying within wide limits, by means of the space charge zone due to the potential difference between the collector and the base, the electric resistance of that part of the base by means of which one of its electrodes is electrically connected to the emitter-base junction, without substantially modifying the resistance of that part of the base by which the other of its electrodes is electrically connected to the said junction.
  • FIG. 1 is a view of a transistor according to a first constructional form, as seen from the emitter side.
  • FIG. 2 is a section along the line 11-11 of FIG. 1.
  • FIGS. 3 to 5 show in section three other constructional forms.
  • FIG. 6 is a diagram of the application of the transistor.
  • the transistor comprises in the usual manner a central semi-conductor layer, for example of n-type, which is intended to form the base B.
  • a central semi-conductor layer for example of n-type, which is intended to form the base B.
  • a p-type semi-conductor layer intended to form the emitter E and the collector C respectively.
  • Each of the said three layers B, E and C is provided with an electrode b, e, and 0 respectively by means of which it can be con nected to an electric circuit.
  • the electrode b is in the form of a ring surrounding the emitter E.
  • a circular groove 0 surrounding the emitter.
  • the base is provided with a second electrode 11,, also in the form of a ring.
  • the electrodes b and b may be connected to different electric circuits, and the emitter current may therefore be controlled by two different control voltages.
  • the electric resistance of that part of the base B which electrically connects the electrode b to the emitterbase junction may be varied by the voltage of the collector C within such limits that the control circuit of which it forms part can be substantially interrupted.
  • the space charge zone due to the potential difference between the collector and the base is proportional to the square root of the collector voltage for a given base, the latter voltage may be made such that this zone extends as far as the groove 0, as indicated in chain lines in FIG. 2, and substantially breaks the circuit b-E. Since the part B of the base is not reached by the said zone, its resistance remains substantially unchanged, so
  • a single transistor according to the invention can be used as a bistable multiifator, for example in accordance with the diagram of
  • the collector C is connected through a resistance R to the negative pole of a direct-voltage source S.
  • the positive pole of the source S is connected to the emitter E, which is earthed.
  • the electrode b is negatively biased in relation to the emitter E by means of a source S
  • the electrode b is positively biased in relation to the emitter E by means of a source S which is effected through a resistance R
  • the electrode b is connected through a capacitor K to an alternating-voltage pulse generator I.
  • the value of the latter is so chosen that the space charge Z0118 due to the potential difference between the collector and the base can extend as far as the groove 0 (shown in chain lines in the drawing), the value of the electric resistance of that part of the base which electrically connects the electrode b to the emitter-base junction will be practically infinite, so that the circuit bE will be practically interrupted. Owing to the positive biasing of the electrode b by the source 8,, the transistor will remain blocked even when the cause of the blocking, namely the positive voltage, has ceased.
  • FIGS. 3 to 5 show three other constructional forms of the transistor according to the invention.
  • the base 3 comprises a thickened portion B on which are disposed the emitter E and the electrode b It will readily be seen that the electric resistance of that part of the base which electrically connects the electrode b to the emitterbase junction can be varied by means of the space charge zone due to the potential difference between the collector and the base without modifying the resistance of that part B, which connects the electrode b; to the said junction.
  • the transistor according to FIG. 4 comprises two ringshaped auxiliary collectors C and C one on either side of the base, and situated between the electrode b and b, of the base. These auxiliary collectors C and C are electrically connected to the main collector C.
  • the electric resistance of that part of the base'which connects the electrode b to the emitter-base junction can here be varied by the space charge zones due to the potential differences between each of the auxiliary collectors and the base, which zones may extend one towards the other and even be joined together, without modifying the resistance of the part B connecting the electrode b, to the said junction.
  • a part of the layer constituting the base B notably the part B on which the emitter and the electrode b are positioned, has a greater impurity content than the remainder of the base B.
  • the electric resistance of that part of the base which is of lower impurity content and which connects the electrode b to the emitter-base junction may be varied by the space charge zone due to the potential difference between the collector and the base without the resistance of that part B of the base which has higher impurity content and which connects the electrode b; to said junction being substantially modified.
  • the two electrodes b and b of the base are ring-shaped. It is obvious that they could have any other form.
  • a transistor comprising a base, an emitter, collector means including a collector, said emitter and collector means being provided with electrodes for connection in an electric circuit and said emitter and the collector of said means being mounted in opposed positions on opposite sides of said base, and a pair of base electrodes for connecting said base to a pair of independent electric circuits for controlling the emitter current, said base interconnecting in electrically conductive relation said base electrodes with said emitter and having on the emitter side of the base a portion opposite said collector supporting one of said base electrodes and the emitter, and said base having a region adjacent to said collector means electrically between said other electrode of the base and said emitter for said region to accommodate space charge produced in response to application of a predetermined potential to said collector means thus altering the electrical resistance of said region, said portion of the base having a face extending from the emitter side of the base to said region of the base at a locus from the emitter between said one base electrode and said other base electrode, and said portion being substantially isolated electrically from said other base electrode when said face is contacted
  • a transistor comprising a base, an emitter and a collector mounted in opposed positions with respect to each other on opposite sides of said base and provided with electrodes for connection in an electric circuit, and a pair of base electrodes for connecting said base to a pair of independent electric circuits for controlling the emitter current, said base interconnecting in electrically conductive relation said base electrodes with said emitter and having on the emitter side of the base a portion opposite said collector supporting one of said base electrodes and the emit-ter, and said base having a region adjacent to said collector electrically between said other electrode of the base and said emitter for said region to accommodate space charge produced in response to application of a predetermined potential to said collector thus altering the electrical resistance of said region, said portion of the base being adjacent to a groove in said base extending from the emitter side of the base to said region of the base at a locus firom the emitter between said one base electrode and said other base electrode, and said portion being substantially isolated electrically from said other base electrode when said groove is contacted by space charge in said region and being of such extent
  • a transistor comprising a base, an emitter and a collector mounted in opposed positions with respect to each other on opposite sides of said base and provided with electrodes for connection in an electric circuit, and a pair of base electrodes for connecting said base to a pair of independent electric circuits for controlling the emitter current, said base interconnecting in electrically conductive relation said base electrodes with said emittter and having on the emitter side of the base a thickening portion opposite said collector supporting one of said base electrodes and the emitter, and said base having a region adjacent to said collector electrically between said other electrode of the base and said emitter for said region to accommodate space charge produced in response to application of a predetermined potential to said collector thus altering the electrical resistance of said region, said thickening portion of the basehaving a face extending from the emitter side of the base to said region of the base at a locus from the emitter between said one base electrode and said other base electrode, and said thickening portion being substantially isolated electrically firom said other base electrode when said face is contacted by space charge in said region
  • a transistor comprising a base, an emitter and a collector mounted in opposed positions with respect to each other on opposite sides of said base and provided with electrodes for connection in an electric circuit, a pair of base electrodes for connecting said base to a pair of independent electric circuits for controlling the emitter current, one of the electrodes of said pair being spaced a shorter distance from the emitter than the other electrode of the pair, and a pair of ring-shaped auxiliary collectors each on an individually corresponding one of said opposite sides of said base and having opposed positions with respect to each other wherein one of said ringshaped auxiliary collectors surrounds said collector and the other of said ring-shaped auxiliary collectors surrounds said emitter and is located between said base electrodes, said auxiliary ring-shaped collectors being electrically connected to said collector outside said base, said base interconnecting in electrically conductive relation said base electrodes with said emitter and having on the emitter side of the base a portion opposite said collector supporting said one of said base electrodes and the emitter, and said base having a region adjacent to
  • a transistor comprising a base, an emitter and a collector mounted in opposed positions with respect to each other on opposite sides of said base and provided with electrodes for connection in an electric circuit, and a pair of base electrodes for connecting said base to a pair of independent electric circuits for controlling the emitter current, said base interconnecting in electrically conductive relation said base electrodes with said emitter and having on the emitter side of the base a portion opposite said collector supporting one of said base electrodes and the emitter, and said base having a region adjacent to said collector electrically between said other electrode of the base and said emitter for said region to accommodate space charge produced in response to application of a predetermined potential to said collector thus altering the electrical resistance of said region, said portion of the base having a relatively high impurity content as compared with said region of the base and having a face extending from the emitter side of the base to said region at a locus from the emitter between said one base electrode and said other base electrode, and said portion being substantially isolated electrically from said other base electrode when said face is contacted by space

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
US782760A 1957-12-28 1958-12-24 Plural base transistor structure and circuit Expired - Lifetime US3038087A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH5422657 1957-12-28

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US3038087A true US3038087A (en) 1962-06-05

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US782760A Expired - Lifetime US3038087A (en) 1957-12-28 1958-12-24 Plural base transistor structure and circuit

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US (1) US3038087A (fr)
BE (1) BE573933A (fr)
CH (1) CH335368A (fr)
DE (1) DE1132662B (fr)
FR (1) FR1256523A (fr)
GB (1) GB905945A (fr)
NL (1) NL107737C (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3611058A (en) * 1970-05-11 1971-10-05 Gen Motors Corp Varactor diode
US3735481A (en) * 1967-08-16 1973-05-29 Hitachi Ltd Method of manufacturing an integrated circuit having a transistor isolated by the collector region
US4695862A (en) * 1984-09-20 1987-09-22 Sony Corporation Semiconductor apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
NL254591A (fr) * 1960-08-12

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2801348A (en) * 1954-05-03 1957-07-30 Rca Corp Semiconductor devices
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (fr) * 1948-06-26
NL79529C (fr) * 1948-09-24
NL90299C (fr) * 1950-03-21
NL83838C (fr) * 1952-12-01 1957-01-15

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
US2801348A (en) * 1954-05-03 1957-07-30 Rca Corp Semiconductor devices
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3735481A (en) * 1967-08-16 1973-05-29 Hitachi Ltd Method of manufacturing an integrated circuit having a transistor isolated by the collector region
US3611058A (en) * 1970-05-11 1971-10-05 Gen Motors Corp Varactor diode
US4695862A (en) * 1984-09-20 1987-09-22 Sony Corporation Semiconductor apparatus

Also Published As

Publication number Publication date
BE573933A (fr) 1959-04-16
GB905945A (en) 1962-09-12
DE1132662B (de) 1962-07-05
CH335368A (fr) 1958-12-31
FR1256523A (fr) 1961-03-24
NL107737C (fr) 1964-03-16

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