DE1132662B - Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone - Google Patents
Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der BasiszoneInfo
- Publication number
- DE1132662B DE1132662B DES61123A DES0061123A DE1132662B DE 1132662 B DE1132662 B DE 1132662B DE S61123 A DES61123 A DE S61123A DE S0061123 A DES0061123 A DE S0061123A DE 1132662 B DE1132662 B DE 1132662B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- emitter
- electrode
- collector
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000008719 thickening Effects 0.000 claims description 4
- 238000007493 shaping process Methods 0.000 claims description 2
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/04—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
- C08L27/06—Homopolymers or copolymers of vinyl chloride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
- C08L9/02—Copolymers with acrylonitrile
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH5422657 | 1957-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1132662B true DE1132662B (de) | 1962-07-05 |
Family
ID=4519135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES61123A Pending DE1132662B (de) | 1957-12-28 | 1958-12-23 | Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone |
Country Status (7)
Country | Link |
---|---|
US (1) | US3038087A (fr) |
BE (1) | BE573933A (fr) |
CH (1) | CH335368A (fr) |
DE (1) | DE1132662B (fr) |
FR (1) | FR1256523A (fr) |
GB (1) | GB905945A (fr) |
NL (1) | NL107737C (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
NL254591A (fr) * | 1960-08-12 | |||
US3177414A (en) * | 1961-07-26 | 1965-04-06 | Nippon Electric Co | Device comprising a plurality of transistors |
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
US3735481A (en) * | 1967-08-16 | 1973-05-29 | Hitachi Ltd | Method of manufacturing an integrated circuit having a transistor isolated by the collector region |
US3611058A (en) * | 1970-05-11 | 1971-10-05 | Gen Motors Corp | Varactor diode |
JPS6174369A (ja) * | 1984-09-20 | 1986-04-16 | Sony Corp | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE814487C (de) * | 1948-06-26 | 1951-09-24 | Western Electric Co | Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie |
DE890847C (de) * | 1948-09-24 | 1953-09-24 | Western Electric Co | Halbleiter-UEbertragungsvorrichtung |
DE966849C (de) * | 1952-12-01 | 1957-09-12 | Philips Nv | Transistorelement und Transistorschaltung |
DE968666C (de) * | 1950-03-21 | 1958-03-20 | Int Standard Electric Corp | Halbleiterkristallverstaerker |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
US2870345A (en) * | 1954-02-02 | 1959-01-20 | Philips Corp | Amplification control of a transistor |
US2801348A (en) * | 1954-05-03 | 1957-07-30 | Rca Corp | Semiconductor devices |
US2889499A (en) * | 1954-09-27 | 1959-06-02 | Ibm | Bistable semiconductor device |
US2915647A (en) * | 1955-07-13 | 1959-12-01 | Bell Telephone Labor Inc | Semiconductive switch and negative resistance |
US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
-
1957
- 1957-12-28 CH CH335368D patent/CH335368A/fr unknown
-
1958
- 1958-12-16 BE BE573933A patent/BE573933A/fr unknown
- 1958-12-17 GB GB40796/58A patent/GB905945A/en not_active Expired
- 1958-12-18 FR FR38930A patent/FR1256523A/fr not_active Expired
- 1958-12-18 NL NL234353A patent/NL107737C/xx active
- 1958-12-23 DE DES61123A patent/DE1132662B/de active Pending
- 1958-12-24 US US782760A patent/US3038087A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE814487C (de) * | 1948-06-26 | 1951-09-24 | Western Electric Co | Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie |
DE890847C (de) * | 1948-09-24 | 1953-09-24 | Western Electric Co | Halbleiter-UEbertragungsvorrichtung |
DE968666C (de) * | 1950-03-21 | 1958-03-20 | Int Standard Electric Corp | Halbleiterkristallverstaerker |
DE966849C (de) * | 1952-12-01 | 1957-09-12 | Philips Nv | Transistorelement und Transistorschaltung |
Also Published As
Publication number | Publication date |
---|---|
BE573933A (fr) | 1959-04-16 |
GB905945A (en) | 1962-09-12 |
US3038087A (en) | 1962-06-05 |
CH335368A (fr) | 1958-12-31 |
FR1256523A (fr) | 1961-03-24 |
NL107737C (fr) | 1964-03-16 |
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