DE1132662B - Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone - Google Patents

Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone

Info

Publication number
DE1132662B
DE1132662B DES61123A DES0061123A DE1132662B DE 1132662 B DE1132662 B DE 1132662B DE S61123 A DES61123 A DE S61123A DE S0061123 A DES0061123 A DE S0061123A DE 1132662 B DE1132662 B DE 1132662B
Authority
DE
Germany
Prior art keywords
zone
emitter
electrode
collector
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES61123A
Other languages
German (de)
English (en)
Inventor
Jakob Luscher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SSIH Management Services SA
Original Assignee
SSIH Management Services SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SSIH Management Services SA filed Critical SSIH Management Services SA
Publication of DE1132662B publication Critical patent/DE1132662B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/04—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • C08L27/06—Homopolymers or copolymers of vinyl chloride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
    • C08L9/02—Copolymers with acrylonitrile

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
DES61123A 1957-12-28 1958-12-23 Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone Pending DE1132662B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH5422657 1957-12-28

Publications (1)

Publication Number Publication Date
DE1132662B true DE1132662B (de) 1962-07-05

Family

ID=4519135

Family Applications (1)

Application Number Title Priority Date Filing Date
DES61123A Pending DE1132662B (de) 1957-12-28 1958-12-23 Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone

Country Status (7)

Country Link
US (1) US3038087A (fr)
BE (1) BE573933A (fr)
CH (1) CH335368A (fr)
DE (1) DE1132662B (fr)
FR (1) FR1256523A (fr)
GB (1) GB905945A (fr)
NL (1) NL107737C (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
NL254591A (fr) * 1960-08-12
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3735481A (en) * 1967-08-16 1973-05-29 Hitachi Ltd Method of manufacturing an integrated circuit having a transistor isolated by the collector region
US3611058A (en) * 1970-05-11 1971-10-05 Gen Motors Corp Varactor diode
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE814487C (de) * 1948-06-26 1951-09-24 Western Electric Co Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie
DE890847C (de) * 1948-09-24 1953-09-24 Western Electric Co Halbleiter-UEbertragungsvorrichtung
DE966849C (de) * 1952-12-01 1957-09-12 Philips Nv Transistorelement und Transistorschaltung
DE968666C (de) * 1950-03-21 1958-03-20 Int Standard Electric Corp Halbleiterkristallverstaerker

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
US2801348A (en) * 1954-05-03 1957-07-30 Rca Corp Semiconductor devices
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE814487C (de) * 1948-06-26 1951-09-24 Western Electric Co Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie
DE890847C (de) * 1948-09-24 1953-09-24 Western Electric Co Halbleiter-UEbertragungsvorrichtung
DE968666C (de) * 1950-03-21 1958-03-20 Int Standard Electric Corp Halbleiterkristallverstaerker
DE966849C (de) * 1952-12-01 1957-09-12 Philips Nv Transistorelement und Transistorschaltung

Also Published As

Publication number Publication date
BE573933A (fr) 1959-04-16
GB905945A (en) 1962-09-12
US3038087A (en) 1962-06-05
CH335368A (fr) 1958-12-31
FR1256523A (fr) 1961-03-24
NL107737C (fr) 1964-03-16

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