NL92927C - - Google Patents

Info

Publication number
NL92927C
NL92927C NL92927DA NL92927C NL 92927 C NL92927 C NL 92927C NL 92927D A NL92927D A NL 92927DA NL 92927 C NL92927 C NL 92927C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL92927C publication Critical patent/NL92927C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
NL92927D 1954-07-27 NL92927C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES40182A DE1032853B (de) 1954-07-27 1954-07-27 Verfahren zur Herstellung von Legierungskontakten auf einem Halbleitergrundkoerper aus Silizium

Publications (1)

Publication Number Publication Date
NL92927C true NL92927C (de)

Family

ID=7483566

Family Applications (2)

Application Number Title Priority Date Filing Date
NL92927D NL92927C (de) 1954-07-27
NL198572D NL198572A (de) 1954-07-27

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL198572D NL198572A (de) 1954-07-27

Country Status (5)

Country Link
US (1) US2831787A (de)
DE (1) DE1032853B (de)
FR (1) FR1137399A (de)
GB (1) GB795478A (de)
NL (2) NL198572A (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
US2985550A (en) * 1957-01-04 1961-05-23 Texas Instruments Inc Production of high temperature alloyed semiconductors
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
DE1073109B (de) * 1957-08-16 1960-01-14 General Electric Company Sehe nectady, N Y (V St A) Verfahren zur Her stellung nicht gleichrichtender ohmscher Metallkontakte an Siliziumkarbidkorpern
GB849477A (en) * 1957-09-23 1960-09-28 Nat Res Dev Improvements in or relating to semiconductor control devices
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
US2937323A (en) * 1958-05-29 1960-05-17 Westinghouse Electric Corp Fused junctions in silicon carbide
NL107889C (de) * 1958-08-26
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
GB945747A (de) * 1959-02-06 Texas Instruments Inc
GB936181A (en) * 1959-05-19 1963-09-04 Nat Res Dev Improvements in and relating to solid-state electrical devices
DE1102250B (de) * 1959-11-13 1961-03-16 Licentia Gmbh Verfahren zur Kontaktierung von Halbleiterbauelementen, insbesondere Thermoelementen
NL260481A (de) * 1960-02-08
US3176204A (en) * 1960-12-22 1965-03-30 Raytheon Co Device composed of different semiconductive materials
US3200490A (en) * 1962-12-07 1965-08-17 Philco Corp Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
NL302497A (de) * 1962-12-31
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
DE1514563A1 (de) * 1965-09-07 1969-06-19 Semikron Gleichrichterbau Steuerbares Halbleiterbauelement
US3458777A (en) * 1966-09-21 1969-07-29 Hughes Aircraft Co Pin diode with a non-uniform intrinsic region width
US3448354A (en) * 1967-01-20 1969-06-03 Rca Corp Semiconductor device having increased resistance to second breakdown
DE1539332B2 (de) * 1967-03-21 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Kontaktstück zur Kontaktierung von Thermoelementschenkeln in Thermogenerato ren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE489418A (de) * 1948-06-26

Also Published As

Publication number Publication date
DE1032853B (de) 1958-06-26
GB795478A (en) 1958-05-21
US2831787A (en) 1958-04-22
FR1137399A (fr) 1957-05-28
NL198572A (de)

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