BE528756A - - Google Patents

Info

Publication number
BE528756A
BE528756A BE528756DA BE528756A BE 528756 A BE528756 A BE 528756A BE 528756D A BE528756D A BE 528756DA BE 528756 A BE528756 A BE 528756A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE528756A publication Critical patent/BE528756A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Weting (AREA)
BE528756D 1953-05-11 BE528756A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US354180A US2922934A (en) 1953-05-11 1953-05-11 Base connection for n-p-n junction transistor

Publications (1)

Publication Number Publication Date
BE528756A true BE528756A (de)

Family

ID=23392179

Family Applications (1)

Application Number Title Priority Date Filing Date
BE528756D BE528756A (de) 1953-05-11

Country Status (5)

Country Link
US (1) US2922934A (de)
BE (1) BE528756A (de)
DE (1) DE1019765B (de)
FR (1) FR1114837A (de)
GB (1) GB755276A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160547B (de) * 1956-06-16 1964-01-02 Siemens Ag Verfahren zum elektrolytischen AEtzen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen Halbleiterkoerper und einem an die Oberflaeche tretenden pn-UEbergang

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL220119A (de) * 1956-08-31
US2964830A (en) * 1957-01-31 1960-12-20 Westinghouse Electric Corp Silicon semiconductor devices
US2937962A (en) * 1957-03-20 1960-05-24 Texas Instruments Inc Transistor devices
US3222654A (en) * 1961-09-08 1965-12-07 Widrow Bernard Logic circuit and electrolytic memory element therefor
BE624959A (de) * 1961-11-20

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE436821C (de) * 1926-11-09 Mitsubishi Zosen Kabushiki Kai Verfahren zur elektrolytischen Ablagerung einer elastischen, dehnbaren und zaehgefuegten Eisenschicht
US2044431A (en) * 1932-03-05 1936-06-16 Anaconda Copper Mining Co Method of electroplating metal
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2428464A (en) * 1945-02-09 1947-10-07 Westinghouse Electric Corp Method and composition for etching metal
NL84061C (de) * 1948-06-26
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
US2728034A (en) * 1950-09-08 1955-12-20 Rca Corp Semi-conductor devices with opposite conductivity zones
US2654059A (en) * 1951-05-26 1953-09-29 Bell Telephone Labor Inc Semiconductor signal translating device
NL91981C (de) * 1951-08-24
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
US2655625A (en) * 1952-04-26 1953-10-13 Bell Telephone Labor Inc Semiconductor circuit element
BE519804A (de) * 1952-05-09
US2754455A (en) * 1952-11-29 1956-07-10 Rca Corp Power Transistors
US2748325A (en) * 1953-04-16 1956-05-29 Rca Corp Semi-conductor devices and methods for treating same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160547B (de) * 1956-06-16 1964-01-02 Siemens Ag Verfahren zum elektrolytischen AEtzen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen Halbleiterkoerper und einem an die Oberflaeche tretenden pn-UEbergang

Also Published As

Publication number Publication date
US2922934A (en) 1960-01-26
FR1114837A (fr) 1956-04-17
DE1019765B (de) 1957-11-21
GB755276A (en) 1956-08-22

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