FR1122092A - Perfectionnements aux dispositifs semi-conducteurs - Google Patents

Perfectionnements aux dispositifs semi-conducteurs

Info

Publication number
FR1122092A
FR1122092A FR1122092DA FR1122092A FR 1122092 A FR1122092 A FR 1122092A FR 1122092D A FR1122092D A FR 1122092DA FR 1122092 A FR1122092 A FR 1122092A
Authority
FR
France
Prior art keywords
semiconductor device
device enhancements
enhancements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1122092A publication Critical patent/FR1122092A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1122092D 1954-03-01 1955-02-10 Perfectionnements aux dispositifs semi-conducteurs Expired FR1122092A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US413369A US3010857A (en) 1954-03-01 1954-03-01 Semi-conductor devices and methods of making same

Publications (1)

Publication Number Publication Date
FR1122092A true FR1122092A (fr) 1956-08-31

Family

ID=23636964

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1122092D Expired FR1122092A (fr) 1954-03-01 1955-02-10 Perfectionnements aux dispositifs semi-conducteurs
FR1122293D Expired FR1122293A (fr) 1954-03-01 1955-02-15 Perfectionnements aux dispositifs à semi-conducteurs

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR1122293D Expired FR1122293A (fr) 1954-03-01 1955-02-15 Perfectionnements aux dispositifs à semi-conducteurs

Country Status (6)

Country Link
US (1) US3010857A (fr)
BE (1) BE536129A (fr)
CH (1) CH362149A (fr)
FR (2) FR1122092A (fr)
GB (1) GB801713A (fr)
NL (1) NL103500C (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3109938A (en) * 1958-03-19 1963-11-05 Rauland Corp Semi-conductor device having a gas-discharge type switching characteristic
NL252132A (fr) * 1959-06-30
NL259311A (fr) * 1959-12-21
NL263771A (fr) * 1960-04-26
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
GB1053247A (fr) * 1962-09-04
GB1074284A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
US4270973A (en) * 1978-04-27 1981-06-02 Honeywell Inc. Growth of thallium-doped silicon from a tin-thallium solution

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE466804A (fr) * 1941-12-19
NL70486C (fr) * 1945-12-29
NL84061C (fr) * 1948-06-26
BE500302A (fr) * 1949-11-30
BE510303A (fr) * 1951-11-16
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
BE524233A (fr) * 1952-11-14

Also Published As

Publication number Publication date
FR1122293A (fr) 1956-09-04
US3010857A (en) 1961-11-28
GB801713A (en) 1958-09-17
NL103500C (fr) 1963-01-15
BE536129A (fr) 1959-01-02
CH362149A (de) 1962-05-31

Similar Documents

Publication Publication Date Title
FR1088007A (fr) Perfectionnements aux dispositifs semi-conducteurs
CH341235A (de) Halbleiteranordnung
CH399603A (de) Halbleiteranordnung
FR1176057A (fr) Perfectionnements aux dispositifs semi-conducteurs
FR1147153A (fr) Dispositifs semi-conducteurs
FR1210987A (fr) Perfectionnements aux dispositifs semi-conducteurs
FR1080034A (fr) Perfectionnements aux dispositifs semi-conducteurs
FR1090861A (fr) Perfectionnements aux dispositifs semi-conducteurs
CH334119A (de) Halbleiteranordnung
FR1130025A (fr) Perfectionnements aux dispositifs à semi-conducteur
CH329187A (de) Halbleiteranordnung
CH337949A (de) Punktkontakt-Halbleitervorrichtung
FR1122092A (fr) Perfectionnements aux dispositifs semi-conducteurs
CH329185A (de) Halbleiteranordnung
FR1188498A (fr) Perfectionnements aux dispositifs à semi-conducteurs
FR1139706A (fr) Perfectionnements aux dispositifs de verrouillage
FR1098372A (fr) Dispositifs semi-conducteurs
FR1186637A (fr) Perfectionnements aux dispositifs semi-conducteurs
CH328881A (de) Halbleiteranordnung
FR1302417A (fr) Perfectionnements aux dispositifs semiconducteurs
FR1135571A (fr) Perfectionnements aux dispositifs de mémoire
FR1266933A (fr) Perfectionnements aux dispositifs à semi-conducteurs
FR1153533A (fr) Perfectionnements aux dispositifs semi-conducteurs
AT194489B (de) Halbleitergerät
FR1126761A (fr) Perfectionnements aux dispositifs à semi-conducteur