FR1122092A - Perfectionnements aux dispositifs semi-conducteurs - Google Patents
Perfectionnements aux dispositifs semi-conducteursInfo
- Publication number
- FR1122092A FR1122092A FR1122092DA FR1122092A FR 1122092 A FR1122092 A FR 1122092A FR 1122092D A FR1122092D A FR 1122092DA FR 1122092 A FR1122092 A FR 1122092A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- device enhancements
- enhancements
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US413369A US3010857A (en) | 1954-03-01 | 1954-03-01 | Semi-conductor devices and methods of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1122092A true FR1122092A (fr) | 1956-08-31 |
Family
ID=23636964
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1122092D Expired FR1122092A (fr) | 1954-03-01 | 1955-02-10 | Perfectionnements aux dispositifs semi-conducteurs |
FR1122293D Expired FR1122293A (fr) | 1954-03-01 | 1955-02-15 | Perfectionnements aux dispositifs à semi-conducteurs |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1122293D Expired FR1122293A (fr) | 1954-03-01 | 1955-02-15 | Perfectionnements aux dispositifs à semi-conducteurs |
Country Status (6)
Country | Link |
---|---|
US (1) | US3010857A (fr) |
BE (1) | BE536129A (fr) |
CH (1) | CH362149A (fr) |
FR (2) | FR1122092A (fr) |
GB (1) | GB801713A (fr) |
NL (1) | NL103500C (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3109938A (en) * | 1958-03-19 | 1963-11-05 | Rauland Corp | Semi-conductor device having a gas-discharge type switching characteristic |
NL252132A (fr) * | 1959-06-30 | |||
NL259311A (fr) * | 1959-12-21 | |||
NL263771A (fr) * | 1960-04-26 | |||
US3258371A (en) * | 1962-02-01 | 1966-06-28 | Semiconductor Res Found | Silicon semiconductor device for high frequency, and method of its manufacture |
GB1053247A (fr) * | 1962-09-04 | |||
GB1074284A (en) * | 1963-01-09 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
US4270973A (en) * | 1978-04-27 | 1981-06-02 | Honeywell Inc. | Growth of thallium-doped silicon from a tin-thallium solution |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE466804A (fr) * | 1941-12-19 | |||
NL70486C (fr) * | 1945-12-29 | |||
NL84061C (fr) * | 1948-06-26 | |||
BE500302A (fr) * | 1949-11-30 | |||
BE510303A (fr) * | 1951-11-16 | |||
US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
BE524233A (fr) * | 1952-11-14 |
-
1954
- 1954-03-01 US US413369A patent/US3010857A/en not_active Expired - Lifetime
-
1955
- 1955-02-03 GB GB3219/55A patent/GB801713A/en not_active Expired
- 1955-02-10 FR FR1122092D patent/FR1122092A/fr not_active Expired
- 1955-02-10 NL NL194681A patent/NL103500C/xx active
- 1955-02-15 FR FR1122293D patent/FR1122293A/fr not_active Expired
- 1955-02-28 CH CH362149D patent/CH362149A/de unknown
- 1955-03-01 BE BE536129D patent/BE536129A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR1122293A (fr) | 1956-09-04 |
US3010857A (en) | 1961-11-28 |
GB801713A (en) | 1958-09-17 |
NL103500C (fr) | 1963-01-15 |
BE536129A (fr) | 1959-01-02 |
CH362149A (de) | 1962-05-31 |
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