FR1130025A - Perfectionnements aux dispositifs à semi-conducteur - Google Patents

Perfectionnements aux dispositifs à semi-conducteur

Info

Publication number
FR1130025A
FR1130025A FR1130025DA FR1130025A FR 1130025 A FR1130025 A FR 1130025A FR 1130025D A FR1130025D A FR 1130025DA FR 1130025 A FR1130025 A FR 1130025A
Authority
FR
France
Prior art keywords
semiconductor device
device enhancements
enhancements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1130025A publication Critical patent/FR1130025A/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/08—Infra-red
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant
FR1130025D 1954-04-28 1955-04-28 Perfectionnements aux dispositifs à semi-conducteur Expired FR1130025A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US426098A US2871427A (en) 1954-04-28 1954-04-28 Germanium current controlling devices

Publications (1)

Publication Number Publication Date
FR1130025A true FR1130025A (fr) 1957-01-30

Family

ID=23689279

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1130025D Expired FR1130025A (fr) 1954-04-28 1955-04-28 Perfectionnements aux dispositifs à semi-conducteur
FR1138830D Expired FR1138830A (fr) 1954-04-28 1955-10-11 Perfectionnements aux appareils à semi-conducteur

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR1138830D Expired FR1138830A (fr) 1954-04-28 1955-10-11 Perfectionnements aux appareils à semi-conducteur

Country Status (3)

Country Link
US (1) US2871427A (fr)
FR (2) FR1130025A (fr)
GB (2) GB801138A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1165757B (de) * 1958-06-25 1964-03-19 Siemens Ag Verfahren zum Herstellen des Halbleiterkoerpers von Hochfrequenzdioden

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3121852A (en) * 1960-04-18 1964-02-18 Gen Motors Corp Ohmic contacts on semiconductors
US3200017A (en) * 1960-09-26 1965-08-10 Gen Electric Gallium arsenide semiconductor devices
NL260956A (fr) * 1961-02-07
DE1200016B (de) * 1961-07-13 1965-09-02 Barnes Eng Co Widerstandsbolometer mit selektiver Empfindlichkeit
US3248677A (en) * 1961-10-27 1966-04-26 Ibm Temperature compensated semiconductor resistor
US3369207A (en) * 1963-03-27 1968-02-13 Hasegawa Electronics Co Ltd Temperature varied semiconductor device
US3343114A (en) * 1963-12-30 1967-09-19 Texas Instruments Inc Temperature transducer
US3270309A (en) * 1964-01-29 1966-08-30 Grace W R & Co Temperature sensitive device
US3412610A (en) * 1967-01-04 1968-11-26 All O Matic Mfg Corp Thermal sensing circuit
US3962692A (en) * 1974-11-18 1976-06-08 General Motors Corporation Solid state temperature responsive switch
US4063210A (en) * 1976-02-17 1977-12-13 General Motors Corporation Temperature independent semiconductor resistor and method of making same
GB2125217B (en) * 1982-08-06 1986-01-02 Secr Defence Infra red detector arrays
DD233705A1 (de) * 1985-01-03 1986-03-05 Adw Ddr Inst Optik Optoelektronischer festkoerperschalter
US5141334A (en) * 1991-09-24 1992-08-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Sub-kelvin resistance thermometer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
US2553491A (en) * 1950-04-27 1951-05-15 Bell Telephone Labor Inc Acoustic transducer utilizing semiconductors
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1165757B (de) * 1958-06-25 1964-03-19 Siemens Ag Verfahren zum Herstellen des Halbleiterkoerpers von Hochfrequenzdioden

Also Published As

Publication number Publication date
FR1138830A (fr) 1957-06-20
US2871427A (en) 1959-01-27
GB801138A (en) 1958-09-10
GB816466A (en) 1959-07-15

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