FR1186637A - Perfectionnements aux dispositifs semi-conducteurs - Google Patents

Perfectionnements aux dispositifs semi-conducteurs

Info

Publication number
FR1186637A
FR1186637A FR1186637DA FR1186637A FR 1186637 A FR1186637 A FR 1186637A FR 1186637D A FR1186637D A FR 1186637DA FR 1186637 A FR1186637 A FR 1186637A
Authority
FR
France
Prior art keywords
semiconductor device
device enhancements
enhancements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pye Electronic Products Ltd
Original Assignee
Pye Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pye Ltd filed Critical Pye Ltd
Application granted granted Critical
Publication of FR1186637A publication Critical patent/FR1186637A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR1186637D 1956-11-23 1957-11-21 Perfectionnements aux dispositifs semi-conducteurs Expired FR1186637A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3590556A GB864771A (en) 1956-11-23 1956-11-23 Improvements in or relating to junction transistors

Publications (1)

Publication Number Publication Date
FR1186637A true FR1186637A (fr) 1959-08-28

Family

ID=10382846

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1186637D Expired FR1186637A (fr) 1956-11-23 1957-11-21 Perfectionnements aux dispositifs semi-conducteurs

Country Status (2)

Country Link
FR (1) FR1186637A (fr)
GB (1) GB864771A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132251B (de) * 1960-08-05 1962-06-28 Telefunken Patent Verfahren zum Herstellen eines Flaechentransistors
DE1160111B (de) * 1959-08-29 1963-12-27 Philips Nv Diffusionstransistor mit einer diffundierten Basiszone
DE1219127B (de) * 1959-09-29 1966-06-16 Rca Corp Verfahren zur Herstellung eines legierten PN-UEbergangs in einer Halbleiterscheibe

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160111B (de) * 1959-08-29 1963-12-27 Philips Nv Diffusionstransistor mit einer diffundierten Basiszone
DE1219127B (de) * 1959-09-29 1966-06-16 Rca Corp Verfahren zur Herstellung eines legierten PN-UEbergangs in einer Halbleiterscheibe
DE1132251B (de) * 1960-08-05 1962-06-28 Telefunken Patent Verfahren zum Herstellen eines Flaechentransistors

Also Published As

Publication number Publication date
GB864771A (en) 1961-04-06

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