FR1088007A - Perfectionnements aux dispositifs semi-conducteurs - Google Patents
Perfectionnements aux dispositifs semi-conducteursInfo
- Publication number
- FR1088007A FR1088007A FR1088007DA FR1088007A FR 1088007 A FR1088007 A FR 1088007A FR 1088007D A FR1088007D A FR 1088007DA FR 1088007 A FR1088007 A FR 1088007A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- device enhancements
- enhancements
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4018—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by the type of device to be heated or cooled
- H01L2023/4025—Base discrete devices, e.g. presspack, disc-type transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
- H01L2023/4056—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to additional heatsink
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cell Electrode Carriers And Collectors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US316171A US2759133A (en) | 1952-10-22 | 1952-10-22 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1088007A true FR1088007A (fr) | 1955-03-02 |
Family
ID=23227816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1088007D Expired FR1088007A (fr) | 1952-10-22 | 1953-09-19 | Perfectionnements aux dispositifs semi-conducteurs |
Country Status (5)
Country | Link |
---|---|
US (2) | US2759133A (fr) |
BE (1) | BE523682A (fr) |
FR (1) | FR1088007A (fr) |
GB (1) | GB749392A (fr) |
NL (1) | NL182212B (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1090769B (de) * | 1957-01-09 | 1960-10-13 | Philips Nv | Verfahren zur Herstellung von Leitfaehigkeits- oder pn-UEbergaengen in Halbleiterkoerpern nach dem Aufschmelzverfahren |
DE1156173B (de) * | 1956-07-11 | 1963-10-24 | Bosch Gmbh Robert | Leistungstransistor |
DE1230912B (de) * | 1960-06-09 | 1966-12-22 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2882464A (en) * | 1952-12-04 | 1959-04-14 | Raytheon Mfg Co | Transistor assemblies |
NL104654C (fr) * | 1952-12-31 | 1900-01-01 | ||
US2823148A (en) * | 1953-03-02 | 1958-02-11 | Rca Corp | Method for removing portions of semiconductor device electrodes |
US2809332A (en) * | 1953-07-29 | 1957-10-08 | Rca Corp | Power semiconductor devices |
US2847335A (en) * | 1953-09-15 | 1958-08-12 | Siemens Ag | Semiconductor devices and method of manufacturing them |
US2850687A (en) * | 1953-10-13 | 1958-09-02 | Rca Corp | Semiconductor devices |
NL87784C (fr) * | 1953-10-23 | 1958-04-15 | ||
GB805292A (en) * | 1953-12-02 | 1958-12-03 | Philco Corp | Semiconductor devices |
BE535032A (fr) * | 1954-01-21 | |||
US2980594A (en) * | 1954-06-01 | 1961-04-18 | Rca Corp | Methods of making semi-conductor devices |
US3299331A (en) * | 1955-05-10 | 1967-01-17 | Texas Instruments Inc | Transistor structure with heatconductive housing for cooling |
US2941131A (en) * | 1955-05-13 | 1960-06-14 | Philco Corp | Semiconductive apparatus |
US3193737A (en) * | 1955-05-18 | 1965-07-06 | Ibm | Bistable junction transistor |
US2909715A (en) * | 1955-05-23 | 1959-10-20 | Texas Instruments Inc | Base contacts for transistors |
US2897587A (en) * | 1955-05-23 | 1959-08-04 | Philco Corp | Method of fabricating semiconductor devices |
US2927222A (en) * | 1955-05-27 | 1960-03-01 | Philco Corp | Polarizing semiconductive apparatus |
US2906932A (en) * | 1955-06-13 | 1959-09-29 | Sprague Electric Co | Silicon junction diode |
US2842841A (en) * | 1955-06-13 | 1958-07-15 | Philco Corp | Method of soldering leads to semiconductor devices |
NL101253C (fr) * | 1955-09-12 | |||
US2830238A (en) * | 1955-09-30 | 1958-04-08 | Hughes Aircraft Co | Heat dissipating semiconductor device |
NL121810C (fr) * | 1955-11-04 | |||
US2806187A (en) * | 1955-11-08 | 1957-09-10 | Westinghouse Electric Corp | Semiconductor rectifier device |
BE562490A (fr) * | 1956-03-05 | 1900-01-01 | ||
BE556231A (fr) * | 1956-03-30 | |||
US3020635A (en) * | 1956-05-31 | 1962-02-13 | Raytheon Co | Soldering methods |
US2994017A (en) * | 1956-09-07 | 1961-07-25 | Int Rectifier Corp | Air-cooled rectifier assembly |
US2905873A (en) * | 1956-09-17 | 1959-09-22 | Rca Corp | Semiconductor power devices and method of manufacture |
US2984774A (en) * | 1956-10-01 | 1961-05-16 | Motorola Inc | Transistor heat sink assembly |
US2955242A (en) * | 1956-11-27 | 1960-10-04 | Raytheon Co | Hermetically sealed power transistors |
US2996800A (en) * | 1956-11-28 | 1961-08-22 | Texas Instruments Inc | Method of making ohmic connections to silicon semiconductors |
US2953693A (en) * | 1957-02-27 | 1960-09-20 | Westinghouse Electric Corp | Semiconductor diode |
US2981873A (en) * | 1957-05-02 | 1961-04-25 | Sarkes Tarzian | Semiconductor device |
US2915685A (en) * | 1957-05-27 | 1959-12-01 | Int Rectifier Corp | Dry rectifier assembly and housing therefor |
US3046651A (en) * | 1958-03-14 | 1962-07-31 | Honeywell Regulator Co | Soldering technique |
US2963631A (en) * | 1958-07-10 | 1960-12-06 | Texas Instruments Inc | Arrangement for increasing heat dissipation in semi-conductor-device |
US3058041A (en) * | 1958-09-12 | 1962-10-09 | Raytheon Co | Electrical cooling devices |
US3130272A (en) * | 1958-10-17 | 1964-04-21 | Talk A Phone Co | Intercommunication system |
US3066248A (en) * | 1958-12-16 | 1962-11-27 | Sarkes Tarzian | Semiconductor device |
FR1209312A (fr) * | 1958-12-17 | 1960-03-01 | Hughes Aircraft Co | Perfectionnements aux dispositifs semi-conducteurs du type à jonction |
US3257588A (en) * | 1959-04-27 | 1966-06-21 | Rca Corp | Semiconductor device enclosures |
US2964431A (en) * | 1959-07-28 | 1960-12-13 | Rca Corp | Jig alloying of semiconductor devices |
US3110089A (en) * | 1959-12-16 | 1963-11-12 | Engelhard Ind Inc | Method of bonding amalgam inserts in cavities and structure thereby produced |
US3025437A (en) * | 1960-02-05 | 1962-03-13 | Lear Inc | Semiconductor heat sink and electrical insulator |
GB910063A (en) * | 1960-03-09 | 1962-11-07 | Westinghouse Electric Corp | Semi-conductor devices |
US3141238A (en) * | 1960-11-22 | 1964-07-21 | Jr George G Harman | Method of low temperature bonding for subsequent high temperature use |
US3187423A (en) * | 1962-01-04 | 1965-06-08 | Lloyd C Lantz | Method of releasing solid solder from a joint |
US3255394A (en) * | 1962-06-15 | 1966-06-07 | Gen Motors Corp | Transistor electrode connection |
US3248615A (en) * | 1963-05-13 | 1966-04-26 | Bbc Brown Boveri & Cie | Semiconductor device with liquidized solder layer for compensation of expansion stresses |
US3355635A (en) * | 1964-05-28 | 1967-11-28 | Rca Corp | Semiconductor device assemblage having two convex tabs |
US3536960A (en) * | 1968-06-26 | 1970-10-27 | Electric Regulator Corp | Heat sink module |
FR2052245A5 (fr) * | 1969-07-31 | 1971-04-09 | Cit Alcatel | |
US3839780A (en) * | 1971-04-14 | 1974-10-08 | Raytheon Co | Method of intermetallic bonding |
FR2150214A1 (fr) * | 1971-08-20 | 1973-04-06 | Thomson Csf | |
US3820153A (en) * | 1972-08-28 | 1974-06-25 | Zyrotron Ind Inc | Plurality of semiconductor elements mounted on common base |
DE3527208A1 (de) * | 1985-07-30 | 1987-02-12 | Bosch Gmbh Robert | Elektrisches schaltgeraet |
US4788471A (en) * | 1986-11-21 | 1988-11-29 | Zenith Electronics Corporation | Sealing for CRT components |
JPH0547812A (ja) * | 1991-08-19 | 1993-02-26 | Mitsubishi Electric Corp | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2563503A (en) * | 1951-08-07 | Transistor | ||
US2563504A (en) * | 1951-08-07 | Semiconductor translating device | ||
US924827A (en) * | 1907-09-16 | 1909-06-15 | Greenleaf Whittier Pickard | Oscillation-receiver. |
GB476375A (en) * | 1936-07-16 | 1937-12-07 | British Thomson Houston Co Ltd | Improvements in and relating to methods of uniting metals |
US2162487A (en) * | 1936-09-28 | 1939-06-13 | Westinghouse Electric & Mfg Co | Selenium rectifier |
GB492088A (en) * | 1937-04-27 | 1938-09-14 | British Thomson Houston Co Ltd | Improvements in and relating to methods of joining metals |
US2220961A (en) * | 1937-11-06 | 1940-11-12 | Bell Telephone Labor Inc | Soldering alloy |
US2646536A (en) * | 1946-11-14 | 1953-07-21 | Purdue Research Foundation | Rectifier |
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
BE509110A (fr) * | 1951-05-05 | |||
US2684457A (en) * | 1951-09-04 | 1954-07-20 | Gen Electric | Asymmetrically conductive unit |
US2639380A (en) * | 1952-05-01 | 1953-05-19 | Hollmann Hans Erich | Electrical device and method of preparation |
US2697052A (en) * | 1953-07-24 | 1954-12-14 | Bell Telephone Labor Inc | Fabricating of semiconductor translating devices |
-
0
- US US2735050D patent/US2735050A/en not_active Expired - Lifetime
- NL NLAANVRAGE7513279,A patent/NL182212B/xx unknown
- BE BE523682D patent/BE523682A/xx unknown
-
1952
- 1952-10-22 US US316171A patent/US2759133A/en not_active Expired - Lifetime
-
1953
- 1953-09-19 FR FR1088007D patent/FR1088007A/fr not_active Expired
- 1953-09-24 GB GB26378/53A patent/GB749392A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1156173B (de) * | 1956-07-11 | 1963-10-24 | Bosch Gmbh Robert | Leistungstransistor |
DE1090769B (de) * | 1957-01-09 | 1960-10-13 | Philips Nv | Verfahren zur Herstellung von Leitfaehigkeits- oder pn-UEbergaengen in Halbleiterkoerpern nach dem Aufschmelzverfahren |
DE1230912B (de) * | 1960-06-09 | 1966-12-22 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung |
Also Published As
Publication number | Publication date |
---|---|
GB749392A (en) | 1956-05-23 |
US2759133A (en) | 1956-08-14 |
NL182212B (nl) | |
US2735050A (en) | 1956-02-14 |
BE523682A (fr) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1088007A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1080034A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1176057A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1090861A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1210987A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1130025A (fr) | Perfectionnements aux dispositifs à semi-conducteur | |
FR1088286A (fr) | Dispositifs semi-conducteurs à jonction de surface | |
CH329187A (de) | Halbleiteranordnung | |
FR1106324A (fr) | Dispositifs semi-conducteurs | |
FR1013352A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1122092A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
CH329185A (de) | Halbleiteranordnung | |
FR1081736A (fr) | Fabrication de dispositifs semi-conducteurs | |
FR1098372A (fr) | Dispositifs semi-conducteurs | |
FR1188498A (fr) | Perfectionnements aux dispositifs à semi-conducteurs | |
FR1090012A (fr) | Perfectionnements aux dispositifs semi-conducteurs du type à diffusion | |
CH328881A (de) | Halbleiteranordnung | |
FR1186637A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1085042A (fr) | Perfectionnements aux dispositifs de radio-navigation | |
FR1153533A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1096782A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1154225A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1064054A (fr) | Perfectionnements aux dispositifs de planning | |
CH329544A (de) | Halbleitervorrichtung | |
FR1082473A (fr) | Perfectionnements aux dispositifs électriques employant des matières semi-conductrices |