AT324421B - Halbleitervorrichtung mit einem lateralen transistor und verfahren zur herstellung einer solchen - Google Patents
Halbleitervorrichtung mit einem lateralen transistor und verfahren zur herstellung einer solchenInfo
- Publication number
- AT324421B AT324421B AT14070A AT14070A AT324421B AT 324421 B AT324421 B AT 324421B AT 14070 A AT14070 A AT 14070A AT 14070 A AT14070 A AT 14070A AT 324421 B AT324421 B AT 324421B
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- semiconductor device
- lateral transistor
- transistor
- lateral
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/038—Diffusions-staged
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/096—Lateral transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6900492.A NL162511C (nl) | 1969-01-11 | 1969-01-11 | Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling. |
US1254770A | 1970-02-19 | 1970-02-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
AT324421B true AT324421B (de) | 1975-08-25 |
Family
ID=26644392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT14070A AT324421B (de) | 1969-01-11 | 1970-01-08 | Halbleitervorrichtung mit einem lateralen transistor und verfahren zur herstellung einer solchen |
Country Status (8)
Country | Link |
---|---|
US (1) | US3667006A (de) |
AT (1) | AT324421B (de) |
BE (1) | BE744279A (de) |
CH (1) | CH505475A (de) |
DE (1) | DE1964979C3 (de) |
FR (1) | FR2028146B1 (de) |
GB (1) | GB1291383A (de) |
NL (1) | NL162511C (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0241699A2 (de) * | 1986-03-11 | 1987-10-21 | Fujitsu Limited | Halbleiter-Speicheranordnung unter Verwendung eines programmierbaren Elementes vom Übergangs-Kurzschluss-Typ |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT946150B (it) * | 1971-12-15 | 1973-05-21 | Ates Componenti Elettron | Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza |
JPS4998981A (de) * | 1973-01-24 | 1974-09-19 | ||
US3891480A (en) * | 1973-10-01 | 1975-06-24 | Honeywell Inc | Bipolar semiconductor device construction |
US3972061A (en) * | 1974-10-02 | 1976-07-27 | National Semiconductor Corporation | Monolithic lateral S.C.R. having reduced "on" resistance |
GB1558281A (en) * | 1975-07-31 | 1979-12-19 | Tokyo Shibaura Electric Co | Semiconductor device and logic circuit constituted by the semiconductor device |
US4087900A (en) * | 1976-10-18 | 1978-05-09 | Bell Telephone Laboratories, Incorporated | Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions |
JPS5478092A (en) * | 1977-12-05 | 1979-06-21 | Hitachi Ltd | Lateral semiconductor device |
FR2457564A1 (fr) * | 1979-05-23 | 1980-12-19 | Thomson Csf | Transistor pnp pour circuit integre bipolaire et son procede de fabrication |
NL8006827A (nl) * | 1980-12-17 | 1982-07-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
JPS60117765A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
IT1188309B (it) * | 1986-01-24 | 1988-01-07 | Sgs Microelettrica Spa | Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione |
US4851893A (en) * | 1987-11-19 | 1989-07-25 | Exar Corporation | Programmable active/passive cell structure |
JP2692099B2 (ja) * | 1988-01-14 | 1997-12-17 | 日本電気株式会社 | マスタースライス方式の集積回路 |
US5175117A (en) * | 1991-12-23 | 1992-12-29 | Motorola, Inc. | Method for making buried isolation |
DE19520182C2 (de) * | 1995-06-01 | 2003-06-18 | Infineon Technologies Ag | Bipolartransistor vom pnp-Typ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3197710A (en) * | 1963-05-31 | 1965-07-27 | Westinghouse Electric Corp | Complementary transistor structure |
FR1459084A (fr) * | 1964-09-18 | 1966-04-29 | Texas Instruments Inc | Ligne de transmission sous forme de bandes pour haute fréquence |
US3445734A (en) * | 1965-12-22 | 1969-05-20 | Ibm | Single diffused surface transistor and method of making same |
US3427513A (en) * | 1966-03-07 | 1969-02-11 | Fairchild Camera Instr Co | Lateral transistor with improved injection efficiency |
US3434021A (en) * | 1967-01-13 | 1969-03-18 | Rca Corp | Insulated gate field effect transistor |
FR1520514A (fr) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Procédé de fabrication de circuits intégrés comportant des transistors de types opposés |
FR1520515A (fr) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication |
US3524113A (en) * | 1967-06-15 | 1970-08-11 | Ibm | Complementary pnp-npn transistors and fabrication method therefor |
US3502951A (en) * | 1968-01-02 | 1970-03-24 | Singer Co | Monolithic complementary semiconductor device |
-
1969
- 1969-01-11 NL NL6900492.A patent/NL162511C/xx not_active IP Right Cessation
- 1969-12-24 DE DE1964979A patent/DE1964979C3/de not_active Expired
-
1970
- 1970-01-06 FR FR7000260A patent/FR2028146B1/fr not_active Expired
- 1970-01-08 CH CH20870A patent/CH505475A/de not_active IP Right Cessation
- 1970-01-08 AT AT14070A patent/AT324421B/de not_active IP Right Cessation
- 1970-01-08 GB GB981/70A patent/GB1291383A/en not_active Expired
- 1970-01-09 BE BE744279D patent/BE744279A/xx not_active IP Right Cessation
- 1970-02-19 US US12547A patent/US3667006A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0241699A2 (de) * | 1986-03-11 | 1987-10-21 | Fujitsu Limited | Halbleiter-Speicheranordnung unter Verwendung eines programmierbaren Elementes vom Übergangs-Kurzschluss-Typ |
EP0241699A3 (en) * | 1986-03-11 | 1988-09-21 | Fujitsu Limited | Semiconductor memory device using junction short type prsemiconductor memory device using junction short type programmable element ogrammable element |
US4835590A (en) * | 1986-03-11 | 1989-05-30 | Fujitsu Limited | Semiconductor memory device using junction short type programmable element |
Also Published As
Publication number | Publication date |
---|---|
GB1291383A (en) | 1972-10-04 |
DE1964979C3 (de) | 1985-06-20 |
DE1964979B2 (de) | 1976-09-30 |
CH505475A (de) | 1971-03-31 |
FR2028146A1 (de) | 1970-10-09 |
NL162511C (nl) | 1980-05-16 |
FR2028146B1 (de) | 1974-09-13 |
BE744279A (fr) | 1970-07-09 |
NL162511B (nl) | 1979-12-17 |
US3667006A (en) | 1972-05-30 |
DE1964979A1 (de) | 1970-07-23 |
NL6900492A (de) | 1970-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |