CH505475A - Halbleitervorrichtung mit einem lateralen Transistor - Google Patents

Halbleitervorrichtung mit einem lateralen Transistor

Info

Publication number
CH505475A
CH505475A CH20870A CH20870A CH505475A CH 505475 A CH505475 A CH 505475A CH 20870 A CH20870 A CH 20870A CH 20870 A CH20870 A CH 20870A CH 505475 A CH505475 A CH 505475A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
lateral transistor
transistor
lateral
semiconductor
Prior art date
Application number
CH20870A
Other languages
English (en)
Inventor
Walter Rueegg Heinz
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH505475A publication Critical patent/CH505475A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
CH20870A 1969-01-11 1970-01-08 Halbleitervorrichtung mit einem lateralen Transistor CH505475A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6900492.A NL162511C (nl) 1969-01-11 1969-01-11 Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling.
US1254770A 1970-02-19 1970-02-19

Publications (1)

Publication Number Publication Date
CH505475A true CH505475A (de) 1971-03-31

Family

ID=26644392

Family Applications (1)

Application Number Title Priority Date Filing Date
CH20870A CH505475A (de) 1969-01-11 1970-01-08 Halbleitervorrichtung mit einem lateralen Transistor

Country Status (8)

Country Link
US (1) US3667006A (de)
AT (1) AT324421B (de)
BE (1) BE744279A (de)
CH (1) CH505475A (de)
DE (1) DE1964979C3 (de)
FR (1) FR2028146B1 (de)
GB (1) GB1291383A (de)
NL (1) NL162511C (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT946150B (it) * 1971-12-15 1973-05-21 Ates Componenti Elettron Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza
JPS4998981A (de) * 1973-01-24 1974-09-19
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3972061A (en) * 1974-10-02 1976-07-27 National Semiconductor Corporation Monolithic lateral S.C.R. having reduced "on" resistance
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
FR2457564A1 (fr) * 1979-05-23 1980-12-19 Thomson Csf Transistor pnp pour circuit integre bipolaire et son procede de fabrication
NL8006827A (nl) * 1980-12-17 1982-07-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JPS60117765A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
IT1188309B (it) * 1986-01-24 1988-01-07 Sgs Microelettrica Spa Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione
JPS62210667A (ja) * 1986-03-11 1987-09-16 Fujitsu Ltd 半導体記憶装置
US4851893A (en) * 1987-11-19 1989-07-25 Exar Corporation Programmable active/passive cell structure
JP2692099B2 (ja) * 1988-01-14 1997-12-17 日本電気株式会社 マスタースライス方式の集積回路
US5175117A (en) * 1991-12-23 1992-12-29 Motorola, Inc. Method for making buried isolation
DE19520182C2 (de) * 1995-06-01 2003-06-18 Infineon Technologies Ag Bipolartransistor vom pnp-Typ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
FR1459084A (fr) * 1964-09-18 1966-04-29 Texas Instruments Inc Ligne de transmission sous forme de bandes pour haute fréquence
US3445734A (en) * 1965-12-22 1969-05-20 Ibm Single diffused surface transistor and method of making same
US3427513A (en) * 1966-03-07 1969-02-11 Fairchild Camera Instr Co Lateral transistor with improved injection efficiency
US3434021A (en) * 1967-01-13 1969-03-18 Rca Corp Insulated gate field effect transistor
FR1520514A (fr) * 1967-02-07 1968-04-12 Radiotechnique Coprim Rtc Procédé de fabrication de circuits intégrés comportant des transistors de types opposés
FR1520515A (fr) * 1967-02-07 1968-04-12 Radiotechnique Coprim Rtc Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3502951A (en) * 1968-01-02 1970-03-24 Singer Co Monolithic complementary semiconductor device

Also Published As

Publication number Publication date
GB1291383A (en) 1972-10-04
DE1964979C3 (de) 1985-06-20
DE1964979B2 (de) 1976-09-30
FR2028146A1 (de) 1970-10-09
NL162511C (nl) 1980-05-16
FR2028146B1 (de) 1974-09-13
BE744279A (fr) 1970-07-09
NL162511B (nl) 1979-12-17
AT324421B (de) 1975-08-25
US3667006A (en) 1972-05-30
DE1964979A1 (de) 1970-07-23
NL6900492A (de) 1970-07-14

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Legal Events

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