FR1520514A - Procédé de fabrication de circuits intégrés comportant des transistors de types opposés - Google Patents

Procédé de fabrication de circuits intégrés comportant des transistors de types opposés

Info

Publication number
FR1520514A
FR1520514A FR93983A FR93983A FR1520514A FR 1520514 A FR1520514 A FR 1520514A FR 93983 A FR93983 A FR 93983A FR 93983 A FR93983 A FR 93983A FR 1520514 A FR1520514 A FR 1520514A
Authority
FR
France
Prior art keywords
transistors
integrated circuits
manufacturing integrated
opposite types
types
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR93983A
Other languages
English (en)
Inventor
Jean-Claude Frouin
Michel De Brebisson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RADIOTECHNIQUE COPRIM RTC
Original Assignee
RADIOTECHNIQUE COPRIM RTC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RADIOTECHNIQUE COPRIM RTC filed Critical RADIOTECHNIQUE COPRIM RTC
Priority to FR93983A priority Critical patent/FR1520514A/fr
Priority to NL6801583.A priority patent/NL161618C/xx
Priority to BE710353D priority patent/BE710353A/xx
Priority to US703024A priority patent/US3576682A/en
Priority to CH165768A priority patent/CH483126A/de
Priority to GB5652/68A priority patent/GB1210981A/en
Priority to SE01482/68A priority patent/SE325962B/xx
Priority to AT111768A priority patent/AT307501B/de
Priority to DE1639355A priority patent/DE1639355C3/de
Application granted granted Critical
Publication of FR1520514A publication Critical patent/FR1520514A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR93983A 1967-02-07 1967-02-07 Procédé de fabrication de circuits intégrés comportant des transistors de types opposés Expired FR1520514A (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR93983A FR1520514A (fr) 1967-02-07 1967-02-07 Procédé de fabrication de circuits intégrés comportant des transistors de types opposés
NL6801583.A NL161618C (nl) 1967-02-07 1968-02-03 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleider- inrichting vervaardigd volgens de werkwijze.
US703024A US3576682A (en) 1967-02-07 1968-02-05 Method of making complementary transistors in monolithic integrated circuit
CH165768A CH483126A (de) 1967-02-07 1968-02-05 Verfahren zur Herstellung einer monolithischen integrierten Halbleitervorrichtung und nach diesem Verfahren hergestellte monolithische, integrierte Halbleitervorrichtung
BE710353D BE710353A (fr) 1967-02-07 1968-02-05
GB5652/68A GB1210981A (en) 1967-02-07 1968-02-05 Integrated semiconductor devices
SE01482/68A SE325962B (fr) 1967-02-07 1968-02-05
AT111768A AT307501B (de) 1967-02-07 1968-02-06 Verfahren zur Herstellung einer integrierten Halbleitervorrichtung
DE1639355A DE1639355C3 (de) 1967-02-07 1968-02-06 Verfahren zur Herstellung einer monolithisch integrierten Halbleiteranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR93983A FR1520514A (fr) 1967-02-07 1967-02-07 Procédé de fabrication de circuits intégrés comportant des transistors de types opposés

Publications (1)

Publication Number Publication Date
FR1520514A true FR1520514A (fr) 1968-04-12

Family

ID=8624921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR93983A Expired FR1520514A (fr) 1967-02-07 1967-02-07 Procédé de fabrication de circuits intégrés comportant des transistors de types opposés

Country Status (9)

Country Link
US (1) US3576682A (fr)
AT (1) AT307501B (fr)
BE (1) BE710353A (fr)
CH (1) CH483126A (fr)
DE (1) DE1639355C3 (fr)
FR (1) FR1520514A (fr)
GB (1) GB1210981A (fr)
NL (1) NL161618C (fr)
SE (1) SE325962B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1964979A1 (de) * 1969-01-11 1970-07-23 Philips Nv Halbleitervorrichtung mit einem lateralen Transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509635B1 (fr) * 1970-09-07 1975-04-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1964979A1 (de) * 1969-01-11 1970-07-23 Philips Nv Halbleitervorrichtung mit einem lateralen Transistor

Also Published As

Publication number Publication date
GB1210981A (en) 1970-11-04
US3576682A (en) 1971-04-27
CH483126A (de) 1969-12-15
SE325962B (fr) 1970-07-13
NL6801583A (fr) 1968-08-08
DE1639355C3 (de) 1979-01-04
DE1639355A1 (de) 1971-04-01
NL161618C (nl) 1980-02-15
BE710353A (fr) 1968-08-05
AT307501B (de) 1973-05-25
DE1639355B2 (de) 1978-05-03

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