AT330305B - Halbleiteranordnung mit einem halbleiterwiderstand und verfahren zur herstellung einer derartigen anordnung - Google Patents

Halbleiteranordnung mit einem halbleiterwiderstand und verfahren zur herstellung einer derartigen anordnung

Info

Publication number
AT330305B
AT330305B AT1048371A AT1048371A AT330305B AT 330305 B AT330305 B AT 330305B AT 1048371 A AT1048371 A AT 1048371A AT 1048371 A AT1048371 A AT 1048371A AT 330305 B AT330305 B AT 330305B
Authority
AT
Austria
Prior art keywords
arrangement
semiconductor
manufacturing
resistor
semiconductor resistor
Prior art date
Application number
AT1048371A
Other languages
English (en)
Other versions
ATA1048371A (de
Inventor
K H Nicholas
R A Ford
J R A Beale
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA1048371A publication Critical patent/ATA1048371A/de
Application granted granted Critical
Publication of AT330305B publication Critical patent/AT330305B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT1048371A 1970-12-09 1971-12-06 Halbleiteranordnung mit einem halbleiterwiderstand und verfahren zur herstellung einer derartigen anordnung AT330305B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5847870 1970-12-09

Publications (2)

Publication Number Publication Date
ATA1048371A ATA1048371A (de) 1975-09-15
AT330305B true AT330305B (de) 1976-06-25

Family

ID=10481719

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1048371A AT330305B (de) 1970-12-09 1971-12-06 Halbleiteranordnung mit einem halbleiterwiderstand und verfahren zur herstellung einer derartigen anordnung

Country Status (10)

Country Link
US (1) US3796929A (de)
AT (1) AT330305B (de)
AU (1) AU464038B2 (de)
BE (1) BE776318A (de)
BR (1) BR7108078D0 (de)
CH (1) CH539340A (de)
DE (1) DE2160427B2 (de)
ES (1) ES397739A1 (de)
FR (1) FR2117977B1 (de)
NL (1) NL162246C (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE361232B (de) * 1972-11-09 1973-10-22 Ericsson Telefon Ab L M
US3947866A (en) * 1973-06-25 1976-03-30 Signetics Corporation Ion implanted resistor having controlled temperature coefficient and method
US3909304A (en) * 1974-05-03 1975-09-30 Western Electric Co Method of doping a semiconductor body
US3950187A (en) * 1974-11-15 1976-04-13 Simulation Physics, Inc. Method and apparatus involving pulsed electron beam processing of semiconductor devices
US4002501A (en) * 1975-06-16 1977-01-11 Rockwell International Corporation High speed, high yield CMOS/SOS process
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
US4035823A (en) * 1975-10-06 1977-07-12 Honeywell Inc. Stress sensor apparatus
US4069068A (en) * 1976-07-02 1978-01-17 International Business Machines Corporation Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions
US4092662A (en) * 1976-09-29 1978-05-30 Honeywell Inc. Sensistor apparatus
US4164668A (en) * 1977-05-12 1979-08-14 International Business Machines Corporation Method of correcting the voltage coefficient of resistors implanted or diffused in a semiconductor substrate
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
EP0151585A4 (de) * 1983-07-25 1986-02-20 American Telephone & Telegraph Halbleiteranordnung mit untiefem übergang.
US4603471A (en) * 1984-09-06 1986-08-05 Fairchild Semiconductor Corporation Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions
US4689667A (en) * 1985-06-11 1987-08-25 Fairchild Semiconductor Corporation Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms
FR2602093B1 (fr) * 1985-12-27 1988-10-14 Bull Sa Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法
US5286660A (en) * 1992-12-24 1994-02-15 Motorola, Inc. Method for doping a semiconductor wafer having a diffusivity enhancement region
KR100438771B1 (ko) * 2001-06-30 2004-07-05 삼성전자주식회사 반도체 장치용 원부자재 품질 보증 및 공정 연계 시스템
JP4597972B2 (ja) * 2003-03-31 2010-12-15 東京エレクトロン株式会社 処理部材上に隣接するコーティングを接合する方法。
US8178430B2 (en) * 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533857A (en) * 1967-11-29 1970-10-13 Hughes Aircraft Co Method of restoring crystals damaged by irradiation
GB1269359A (en) * 1968-08-22 1972-04-06 Atomic Energy Authority Uk Improvements in or relating to semiconductors and methods of doping semiconductors
GB1249317A (en) * 1968-11-19 1971-10-13 Mullard Ltd Semiconductor devices

Also Published As

Publication number Publication date
NL7116692A (de) 1972-06-13
CH539340A (de) 1973-07-15
AU3637871A (en) 1973-06-07
DE2160427C3 (de) 1979-10-18
DE2160427A1 (de) 1972-06-15
ES397739A1 (es) 1974-05-16
NL162246C (nl) 1980-04-15
AU464038B2 (en) 1975-08-14
FR2117977A1 (de) 1972-07-28
DE2160427B2 (de) 1979-02-15
NL162246B (nl) 1979-11-15
BE776318A (fr) 1972-06-06
ATA1048371A (de) 1975-09-15
FR2117977B1 (de) 1976-06-04
US3796929A (en) 1974-03-12
BR7108078D0 (pt) 1973-05-29

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee