BE776318A - Dispositif semiconducteur comportant une resistance semiconductrice et procede pour la fabrication d'un tel dispositif - Google Patents

Dispositif semiconducteur comportant une resistance semiconductrice et procede pour la fabrication d'un tel dispositif

Info

Publication number
BE776318A
BE776318A BE776318A BE776318A BE776318A BE 776318 A BE776318 A BE 776318A BE 776318 A BE776318 A BE 776318A BE 776318 A BE776318 A BE 776318A BE 776318 A BE776318 A BE 776318A
Authority
BE
Belgium
Prior art keywords
manufacturing
semiconductor device
device including
semiconductive resistance
semiconductive
Prior art date
Application number
BE776318A
Other languages
English (en)
Inventor
K H Nicholas
R A Ford
J R A Beale
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE776318A publication Critical patent/BE776318A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605Resistors with PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/061Gettering-armorphous layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/904Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
BE776318A 1970-12-09 1971-12-06 Dispositif semiconducteur comportant une resistance semiconductrice et procede pour la fabrication d'un tel dispositif BE776318A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5847870 1970-12-09

Publications (1)

Publication Number Publication Date
BE776318A true BE776318A (fr) 1972-06-06

Family

ID=10481719

Family Applications (1)

Application Number Title Priority Date Filing Date
BE776318A BE776318A (fr) 1970-12-09 1971-12-06 Dispositif semiconducteur comportant une resistance semiconductrice et procede pour la fabrication d'un tel dispositif

Country Status (10)

Country Link
US (1) US3796929A (fr)
AT (1) AT330305B (fr)
AU (1) AU464038B2 (fr)
BE (1) BE776318A (fr)
BR (1) BR7108078D0 (fr)
CH (1) CH539340A (fr)
DE (1) DE2160427B2 (fr)
ES (1) ES397739A1 (fr)
FR (1) FR2117977B1 (fr)
NL (1) NL162246C (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE361232B (fr) * 1972-11-09 1973-10-22 Ericsson Telefon Ab L M
US3947866A (en) * 1973-06-25 1976-03-30 Signetics Corporation Ion implanted resistor having controlled temperature coefficient and method
US3909304A (en) * 1974-05-03 1975-09-30 Western Electric Co Method of doping a semiconductor body
US3950187A (en) * 1974-11-15 1976-04-13 Simulation Physics, Inc. Method and apparatus involving pulsed electron beam processing of semiconductor devices
US4002501A (en) * 1975-06-16 1977-01-11 Rockwell International Corporation High speed, high yield CMOS/SOS process
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
US4035823A (en) * 1975-10-06 1977-07-12 Honeywell Inc. Stress sensor apparatus
US4069068A (en) * 1976-07-02 1978-01-17 International Business Machines Corporation Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions
US4092662A (en) * 1976-09-29 1978-05-30 Honeywell Inc. Sensistor apparatus
US4164668A (en) * 1977-05-12 1979-08-14 International Business Machines Corporation Method of correcting the voltage coefficient of resistors implanted or diffused in a semiconductor substrate
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
JPS60501927A (ja) * 1983-07-25 1985-11-07 アメリカン テレフオン アンド テレグラフ カムパニ− 浅い接合の半導体デバイス
US4603471A (en) * 1984-09-06 1986-08-05 Fairchild Semiconductor Corporation Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions
US4689667A (en) * 1985-06-11 1987-08-25 Fairchild Semiconductor Corporation Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms
FR2602093B1 (fr) * 1985-12-27 1988-10-14 Bull Sa Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Cmos半導体装置
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法
US5286660A (en) * 1992-12-24 1994-02-15 Motorola, Inc. Method for doping a semiconductor wafer having a diffusivity enhancement region
KR100438771B1 (ko) * 2001-06-30 2004-07-05 삼성전자주식회사 반도체 장치용 원부자재 품질 보증 및 공정 연계 시스템
KR100918528B1 (ko) * 2003-03-31 2009-09-21 도쿄엘렉트론가부시키가이샤 처리부재 상에 인접한 코팅을 결합시키는 방법
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533857A (en) * 1967-11-29 1970-10-13 Hughes Aircraft Co Method of restoring crystals damaged by irradiation
GB1269359A (en) * 1968-08-22 1972-04-06 Atomic Energy Authority Uk Improvements in or relating to semiconductors and methods of doping semiconductors
GB1249317A (en) * 1968-11-19 1971-10-13 Mullard Ltd Semiconductor devices

Also Published As

Publication number Publication date
NL7116692A (fr) 1972-06-13
DE2160427B2 (de) 1979-02-15
DE2160427A1 (de) 1972-06-15
NL162246C (nl) 1980-04-15
CH539340A (de) 1973-07-15
ES397739A1 (es) 1974-05-16
FR2117977A1 (fr) 1972-07-28
US3796929A (en) 1974-03-12
BR7108078D0 (pt) 1973-05-29
AU464038B2 (en) 1975-08-14
AT330305B (de) 1976-06-25
NL162246B (nl) 1979-11-15
AU3637871A (en) 1973-06-07
DE2160427C3 (fr) 1979-10-18
ATA1048371A (de) 1975-09-15
FR2117977B1 (fr) 1976-06-04

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